Microsemi Corporation APT11GF120BRDQ1G

SKU: APT11GF120BRDQ1G-9

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Manufacturer Part :
APT11GF120BRDQ1G
Manufacturer :
Microsemi Corporation
Package :
TO-247-3
RoHS :
RoHS Compliant
APT11GF120BRDQ1G Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Published

2005

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

800V, 8A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Max Power Dissipation

156W

Packaging

Tube

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

TIN SILVER COPPER

Additional Feature

ULTRA FAST

Voltage - Rated DC

1.2kV

Mounting Type

Through Hole

Mount

Through Hole

Turn On Time

12 ns

Pin Count

3

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3V

Max Collector Current

25A

JEDEC-95 Code

TO-247AC

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 8A

Turn Off Time-Nom (toff)

161 ns

Current Rating

25A

IGBT Type

NPT

Gate Charge

65nC

Current - Collector Pulsed (Icm)

24A

Td (on/off) @ 25°C

7ns/100ns

Switching Energy

300μJ (on), 285μJ (off)

Radiation Hardening

No

RoHS Status

RoHS Compliant

Element Configuration

Single

Lead Free

Lead Free

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