Infineon SIGC28T65EX1SA1

SKU: SIGC28T65EX1SA1-9

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Manufacturer Part :
SIGC28T65EX1SA1
Manufacturer :
Infineon
Package :
Die
RoHS :
SIGC28T65EX1SA1 Datasheet :
SIGC28T65EX1SA1

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Description

Specification

Processor

Manufacturer

Infineon

Maximum Operating Temperature (°C)

175

Supplier Device Package

Die

Package Quantity

1

Automotive

No

Base Product Number

SIGC28

ECCN (US)

EAR99

EU RoHS

Compliant

Maximum Collector-Emitter Voltage (V)

650

Maximum Gate Emitter Leakage Current (uA)

0.15

Supplier Package

Die

Maximum Gate Emitter Voltage (V)

±20

Mfr

Infineon Technologies

Minimum Operating Temperature (°C)

-40

Package

Bulk

Package Height

0.07

Package Length

6.57

Package Width

4.2

PCB changed

3

PPAP

No

Product Status

Active

Package / Case

Die

Mounting Type

Surface Mount

Drain to Source Voltage (Vdss)

650 V

Operating Temperature

-40°C ~ 175°C (TJ)

Series

TrenchStop™

Part Status

Active

Max Operating Temperature

175 °C

Min Operating Temperature

-40 °C

Pin Count

3

Configuration

Single

Input Type

Standard

Halogen Free

Halogen Free

Collector Emitter Voltage (VCEO)

650 V

Max Dual Supply Voltage

650 V

Typical Collector Emitter Saturation Voltage (V)

1.45

Voltage - Collector Emitter Breakdown (Max)

650 V

Current - Collector (Ic) (Max)

50 A

Collector Emitter Saturation Voltage

1.9

Channel Type

N

Vce(on) (Max) @ Vge, Ic

1.77V @ 15V, 50A

Continuous Collector Current

50

IGBT Type

Trench Field Stop

Current - Collector Pulsed (Icm)

150 A

Packaging

Wafer

Lead Free

Lead Free

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