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Manufacturer |
NTE Electronics |
---|---|
Operating Temperature Classification |
Military |
Mounting Type |
Through Hole |
Package / Case |
TO-71-6 Metal Can |
Surface Mount |
NO |
Number of Pins |
6 |
Supplier Device Package |
TO-71 |
Weight |
4.535924 g |
Number of Terminals |
6 |
Transistor Element Material |
SILICON |
Gate-Source Voltage (Max) |
-50(V) |
Mfr |
NTE Electronics, Inc |
Reach Compliance Code |
unknown |
Mount |
Through Hole |
Package |
Bag |
Package Shape |
ROUND |
Package Type |
TO-71 |
Product Status |
Active |
Rad Hardened |
No |
Max Operating Temperature |
200 °C |
Min Operating Temperature |
-65 °C |
HTS Code |
8541.21.00.95 |
Terminal Position |
BOTTOM |
Terminal Form |
WIRE |
Mounting |
Through Hole |
Pin Count |
6 |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-71 |
Operating Temperature (Max) |
200C |
Operating Temperature (Min) |
-65C |
Number of Elements |
2 |
Configuration |
Dual |
Element Configuration |
Dual |
Operating Mode |
DEPLETION MODE |
FET Type |
2 N-Channel (Dual) |
Transistor Application |
AMPLIFIER |
Input Capacitance (Ciss) (Max) @ Vds |
6pF @ 15V |
Drain to Source Voltage (Vdss) |
50 V |
JESD-30 Code |
O-MBCY-W6 |
Qualification Status |
Not Qualified |
Gate to Source Voltage (Vgs) |
-50 V |
Channel Type |
N |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.25 W |
Feedback Cap-Max (Crss) |
2 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
500 μA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
500 mV @ 500 pA |
Voltage - Breakdown (V(BR)GSS) |
50 V |
Height |
6.35 mm |
Length |
165.1 mm |
Width |
95.25 mm |
In stock
Manufacturer |
Central |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
Die |
Supplier Device Package |
Die |
Mfr |
Central Semiconductor Corp |
Package |
Tray |
Product Status |
Active |
Operating Temperature |
-65°C ~ 175°C (TJ) |
Power - Max |
1.8 W |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
20pF @ 20V |
Drain to Source Voltage (Vdss) |
40 V |
Current - Drain (Idss) @ Vds (Vgs=0) |
25 mA @ 20 V |
Voltage - Cutoff (VGS off) @ Id |
2 V @ 1 nA |
Voltage - Breakdown (V(BR)GSS) |
40 V |
Resistance - RDS(On) |
60 Ohms |
Current Drain (Id) - Max |
50 mA |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
625 mW |
FET Type |
N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
5 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
1 V @ 1 µA |
Voltage - Breakdown (V(BR)GSS) |
35 V |
Resistance - RDS(On) |
50 Ohms |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
3 mA |
Gate-Source Cutoff Voltage |
2.5 V |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
350 mW |
Transistor Polarity |
N-Channel |
Vgs - Gate-Source Breakdown Voltage |
30 V |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
6.5 mA |
Gate-Source Cutoff Voltage |
– 2 V |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
12 mA |
Gate-Source Cutoff Voltage |
– 2 V |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSBF510 NPoS |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
SOT-23-3 |
Package |
Strip |
Product Status |
Active |
Operating Temperature |
-55°C ~ 135°C (TJ) |
Series |
LSK170X-1 |
Power - Max |
400 mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
20pF @ 15V |
Current - Drain (Idss) @ Vds (Vgs=0) |
20 mA @ 10 V |
Voltage - Cutoff (VGS off) @ Id |
200 mV @ 1 nA |
Voltage - Breakdown (V(BR)GSS) |
40 V |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
TO-71-6 |
Mounting Style |
Through Hole |
Drain-Source Current at Vgs=0 |
6.5 mA |
Gate-Source Cutoff Voltage |
6 mV |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSK389 |
Technology |
Si |
Configuration |
Dual |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOIC-8 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
12 mA |
Gate-Source Cutoff Voltage |
6 mV |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSK389 |
Configuration |
Dual |
In stock
Manufacturer |
NEC |
---|---|
Ihs Manufacturer |
RENESAS ELECTRONICS CORP |
Manufacturer Package Code |
PLSP0003ZD-A3 |
Manufacturer Part Number |
2SK425-T1B-A |
Package Description |
, |
Part Life Cycle Code |
Obsolete |
Part Package Code |
MM |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Risk Rank |
5.83 |
Rohs Code |
Yes |
Pbfree Code |
Yes |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
Pin Count |
3 |
Brand Name |
Renesas |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
TO-247-4 |
Mounting Style |
Through Hole |
Id - Continuous Drain Current |
28 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
155 W |
Rds On - Drain-Source Resistance |
74 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Series |
UJ4C |
Technology |
SiC |
Configuration |
Single |
In stock
Manufacturer |
Texas Instruments |
---|---|
Package Style |
CYLINDRICAL |
Number of Terminals |
3 |
Transistor Element Material |
SILICON |
Ihs Manufacturer |
MICROSEMI CORP |
Manufacturer Part Number |
2N4860 |
Operating Temperature-Max |
200 °C |
Package Body Material |
METAL |
Package Description |
TO-18, 3 PIN |
ECCN Code |
EAR99 |
Surface Mount |
NO |
Part Life Cycle Code |
Active |
Part Package Code |
BCY |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Risk Rank |
5.05 |
Rohs Code |
No |
JESD-609 Code |
e0 |
Pbfree Code |
No |
Package Shape |
ROUND |
Terminal Finish |
TIN LEAD |
Number of Elements |
1 |
Configuration |
SINGLE |
Terminal Form |
WIRE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Pin Count |
3 |
Reference Standard |
MIL-19500/385 |
JESD-30 Code |
O-MBCY-W3 |
Qualification Status |
Not Qualified |
HTS Code |
8541.21.00.95 |
Terminal Position |
BOTTOM |
Operating Mode |
DEPLETION MODE |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-206AA |
Drain-source On Resistance-Max |
40 Ω |
DS Breakdown Voltage-Min |
30 V |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
1.8 W |
Feedback Cap-Max (Crss) |
8 pF |
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