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Manufacturer |
Central Semiconductor |
---|---|
Package / Case |
SOT-23 |
Mounting Style |
SMD/SMT |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 65 C |
Transistor Polarity |
P-Channel |
Packaging |
Cut Tape |
Type |
JFET |
Configuration |
Single |
In stock
Manufacturer |
Central |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
Die |
Supplier Device Package |
Die |
Mfr |
Central Semiconductor Corp |
Package |
Tray |
Product Status |
Active |
Operating Temperature |
-65°C ~ 175°C (TJ) |
Power - Max |
1.8 W |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
20pF @ 20V |
Drain to Source Voltage (Vdss) |
40 V |
Current - Drain (Idss) @ Vds (Vgs=0) |
25 mA @ 20 V |
Voltage - Cutoff (VGS off) @ Id |
2 V @ 1 nA |
Voltage - Breakdown (V(BR)GSS) |
40 V |
Resistance - RDS(On) |
60 Ohms |
Current Drain (Id) - Max |
50 mA |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
625 mW |
FET Type |
N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
5 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
1 V @ 1 µA |
Voltage - Breakdown (V(BR)GSS) |
35 V |
Resistance - RDS(On) |
50 Ohms |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
625 mW |
FET Type |
N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
2 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
500 mV @ 1 µA |
Voltage - Breakdown (V(BR)GSS) |
35 V |
Resistance - RDS(On) |
100 Ohms |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
350 mW |
FET Type |
P-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
2 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
1 V @ 10 nA |
Voltage - Breakdown (V(BR)GSS) |
30 V |
Resistance - RDS(On) |
250 Ohms |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
SOT-23-3 |
Base Product Number |
MMBFJ1 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
225 mW |
FET Type |
P-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
7 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
3 V @ 10 nA |
Voltage - Breakdown (V(BR)GSS) |
30 V |
Resistance - RDS(On) |
125 Ohms |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 150°C (TJ) |
FET Type |
N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
30 µA @ 10 V |
Voltage - Cutoff (VGS off) @ Id |
1.7 V @ 1 nA |
Voltage - Breakdown (V(BR)GSS) |
30 V |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
350 mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
30pF @ 10V (VGS) |
Current - Drain (Idss) @ Vds (Vgs=0) |
150 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
4 V @ 3 nA |
Voltage - Breakdown (V(BR)GSS) |
25 V |
Resistance - RDS(On) |
5 Ohms |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOIC-8 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
12 mA |
Gate-Source Cutoff Voltage |
6 mV |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSK389 |
Configuration |
Dual |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
D2PAK-7L |
Mounting Style |
SMD/SMT |
Id - Continuous Drain Current |
44 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
197 W |
Rds On - Drain-Source Resistance |
33 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Technology |
SiC |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
TO-247-3 |
Mounting Style |
SMD/SMT |
Id - Continuous Drain Current |
47 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
242 W |
Rds On - Drain-Source Resistance |
33 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Series |
UJ4C |
Technology |
SiC |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
TO-247-4 |
Mounting Style |
SMD/SMT |
Id - Continuous Drain Current |
37.4 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
203 W |
Rds On - Drain-Source Resistance |
44 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Series |
UJ4C |
Technology |
SiC |
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