ON Semiconductor MMBFJ176

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Description

Specification

Processor

Manufacturer	ON Semiconductor
Packaging	Tape & Reel (TR)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	30mg
Transistor Element Material	SILICON
Breakdown Voltage / V	30V
Number of Elements	1
Max Power Dissipation	225mW
Factory Lead Time	42 Weeks
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
HTS Code	8541.21.00.95
Voltage - Rated DC	-30V
Operating Temperature	-55°C~150°C TJ
Terminal Position	DUAL
FET Technology	JUNCTION
Drain to Source Resistance	250Ohm
Base Part Number	MBFJ176
Element Configuration	Single
Operating Mode	DEPLETION MODE
Power Dissipation	225mW
FET Type	P-Channel
Transistor Application	SWITCHING
Drain to Source Voltage (Vdss)	30V
Continuous Drain Current (ID)	-25mA
Gate to Source Voltage (Vgs)	30V
Terminal Form	GULL WING
Current Rating	25mA
Current - Drain (Idss) @ Vds (Vgs=0)	2mA @ 15V
Voltage - Cutoff (VGS off) @ Id	1V @ 10nA
Resistance - RDS(On)	250Ohm
Height	930μm
Length	2.92mm
Width	1.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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