Microchip 2N5116UB

SKU: 2N5116UB-9

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Manufacturer Part :
2N5116UB
Manufacturer :
Microchip
Package :
3-SMD, No Lead
RoHS :
2N5116UB Datasheet :
2N5116UB

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

ECCN Code

EAR99

Surface Mount

YES

Supplier Device Package

UB

Number of Terminals

3

Transistor Element Material

SILICON

Ihs Manufacturer

MICROSEMI CORP

Manufacturer Part Number

2N5116UB

Mfr

Microchip Technology

Operating Temperature-Max

200 °C

Package

Bulk

Package Description

SURFACE MOUNT PACKAGE-3

Package Shape

RECTANGULAR

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Package Style

SMALL OUTLINE

Part Life Cycle Code

Active

Product Status

Discontinued at Digi-Key

Reflow Temperature-Max (s)

NOT SPECIFIED

Risk Rank

1.63

Rohs Code

No

Operating Temperature

-65°C ~ 200°C (TJ)

Series

Military, MIL-PRF-19500

JESD-609 Code

e0

Pbfree Code

No

Package / Case

3-SMD, No Lead

Mounting Type

Surface Mount

FET Type

P-Channel

Input Capacitance (Ciss) (Max) @ Vds

27pF @ 15V

Terminal Form

NO LEAD

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Pin Count

3

JESD-30 Code

R-CDSO-N3

Qualification Status

Not Qualified

Number of Elements

1

Configuration

SINGLE

Operating Mode

DEPLETION MODE

Power - Max

500 mW

HTS Code

8541.21.00.95

Terminal Finish

TIN LEAD

Drain to Source Voltage (Vdss)

30 V

Polarity/Channel Type

P-CHANNEL

Drain-source On Resistance-Max

175 Ω

DS Breakdown Voltage-Min

30 V

FET Technology

JUNCTION

Power Dissipation-Max (Abs)

0.5 W

Feedback Cap-Max (Crss)

7 pF

Current - Drain (Idss) @ Vds (Vgs=0)

25 mA @ 15 V

Voltage - Cutoff (VGS off) @ Id

4 V @ 1 nA

Voltage - Breakdown (V(BR)GSS)

30 V

Terminal Position

DUAL

Resistance - RDS(On)

175 Ohms

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