NXP USA Inc. PMBFJ112,215

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Description

Specification

Processor

Manufacturer	NXP USA Inc.
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2001
JESD-609 Code	e3
Time@Peak Reflow Temperature-Max (s)	40
Mounting Type	Surface Mount
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.21.00.95
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Part Status	Obsolete
Base Part Number	MBFJ112
JEDEC-95 Code	TO-236AB
Drain-source On Resistance-Max	50Ohm
Qualification Status	Not Qualified
Configuration	SINGLE
Operating Mode	DEPLETION MODE
Power - Max	300mW
FET Type	N-Channel
Transistor Application	SWITCHING
Input Capacitance (Ciss) (Max) @ Vds	6pF @ 10V VGS
Pin Count	3
JESD-30 Code	R-PDSO-G3
DS Breakdown Voltage-Min	40V
FET Technology	JUNCTION
Power Dissipation-Max (Abs)	0.3W
Current - Drain (Idss) @ Vds (Vgs=0)	5mA @ 15V
Voltage - Cutoff (VGS off) @ Id	5V @ 1μA
Voltage - Breakdown (V(BR)GSS)	40V
Resistance - RDS(On)	50Ohm
RoHS Status	ROHS3 Compliant

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