NTE Electronics, Inc. NTE133

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Description

Specification

Processor

Manufacturer	NTE Electronics
Package Shape	ROUND
Mounting Type	Through Hole
Package / Case	TO-106-3 Domed
Surface Mount	NO
Number of Pins	3
Supplier Device Package	TO-106
Weight	4.535924 g
Number of Terminals	3
Transistor Element Material	SILICON
Mfr	NTE Electronics, Inc
Number of Elements	1
Pin Count	3
Mount	Through Hole
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
ECCN Code	EAR99
Max Operating Temperature	150 °C
Min Operating Temperature	-55 °C
HTS Code	8541.21.00.95
Subcategory	Other Transistors
Max Power Dissipation	300 mW
Terminal Position	BOTTOM
Terminal Form	WIRE
Reach Compliance Code	unknown
Package	Bag
JESD-30 Code	O-PBCY-W3
JEDEC-95 Code	TO-106
Gate to Source Voltage (Vgs)	-25 V
Element Configuration	Single
Operating Mode	DEPLETION MODE
Power Dissipation	300 mW
Power - Max	300 mW
FET Type	N-Channel
Transistor Application	AMPLIFIER
Breakdown Voltage	-25 V
Drain to Source Voltage (Vdss)	25 V
Polarity/Channel Type	N-CHANNEL
Continuous Drain Current (ID)	500 µA
Qualification Status	Not Qualified
Configuration	SINGLE
Drain to Source Breakdown Voltage	-6.5 V
DS Breakdown Voltage-Min	25 V
FET Technology	JUNCTION
Power Dissipation-Max (Abs)	0.3 W
Feedback Cap-Max (Crss)	2 pF
Current - Drain (Idss) @ Vds (Vgs=0)	500 µA @ 15 V
Voltage - Cutoff (VGS off) @ Id	6.5 V @ 1 nA
Voltage - Breakdown (V(BR)GSS)	25 V
Height	4.572 mm
Length	88.9 mm
Width	5.2832 mm
REACH SVHC	Unknown

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