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| Manufacturer |
NXP Semiconductors |
|---|---|
| Minimum Operating Temperature (°C) |
-65 |
| Automotive |
No |
| ECCN (US) |
EAR99 |
| Lead Shape |
Gull-wing |
| Maximum Continuous Drain Current (mA) |
50 |
| Maximum Drain Gate Voltage (V) |
40 |
| Maximum Drain Source Voltage (V) |
40 |
| Maximum Gate Source Voltage (V) |
-40 |
| Maximum Operating Temperature (°C) |
150 |
| Maximum Power Dissipation (mW) |
250 |
| Military |
No |
| Material |
Si |
| Package Height |
1(Max) |
| Mounting |
Surface Mount |
| Package Length |
3(Max) |
| Package Width |
1.4(Max) |
| PCB changed |
3 |
| Standard Package Name |
SOT-23 |
| Supplier Package |
TO-236AB |
| Packaging |
Tape and Reel |
| Part Status |
Obsolete |
| Pin Count |
3 |
| Configuration |
Single |
| Channel Type |
N |
| RoHS Status |
RoHS Compliant |
In stock
| Manufacturer |
Central |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
Die |
| Supplier Device Package |
Die |
| Mfr |
Central Semiconductor Corp |
| Package |
Tray |
| Product Status |
Active |
| Operating Temperature |
-65°C ~ 175°C (TJ) |
| Power - Max |
1.8 W |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
20pF @ 20V |
| Drain to Source Voltage (Vdss) |
40 V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
25 mA @ 20 V |
| Voltage - Cutoff (VGS off) @ Id |
2 V @ 1 nA |
| Voltage - Breakdown (V(BR)GSS) |
40 V |
| Resistance - RDS(On) |
60 Ohms |
| Current Drain (Id) - Max |
50 mA |
In stock
| Manufacturer |
Fairchild |
|---|---|
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-92-3 |
| Mfr |
Fairchild Semiconductor |
| Package |
Bulk |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Power - Max |
625 mW |
| FET Type |
N-Channel |
| Current - Drain (Idss) @ Vds (Vgs=0) |
5 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id |
1 V @ 1 µA |
| Voltage - Breakdown (V(BR)GSS) |
35 V |
| Resistance - RDS(On) |
50 Ohms |
In stock
| Manufacturer |
Fairchild |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package |
TO-92-3 |
| Mfr |
Fairchild Semiconductor |
| Package |
Bulk |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Power - Max |
625 mW |
| FET Type |
N-Channel |
| Current - Drain (Idss) @ Vds (Vgs=0) |
2 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id |
500 mV @ 1 µA |
| Voltage - Breakdown (V(BR)GSS) |
35 V |
| Resistance - RDS(On) |
100 Ohms |
In stock
| Manufacturer |
Fairchild |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package |
TO-92-3 |
| Mfr |
Fairchild Semiconductor |
| Package |
Bulk |
| Product Status |
Obsolete |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Power - Max |
350 mW |
| FET Type |
P-Channel |
| Current - Drain (Idss) @ Vds (Vgs=0) |
2 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id |
1 V @ 10 nA |
| Voltage - Breakdown (V(BR)GSS) |
30 V |
| Resistance - RDS(On) |
250 Ohms |
In stock
| Manufacturer |
Linearin |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package |
SOT-23-3 |
| Package |
Strip |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 135°C (TJ) |
| Series |
LSK170X-1 |
| Power - Max |
400 mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
20pF @ 15V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
20 mA @ 10 V |
| Voltage - Cutoff (VGS off) @ Id |
200 mV @ 1 nA |
| Voltage - Breakdown (V(BR)GSS) |
40 V |
In stock
| Manufacturer |
Linearin |
|---|---|
| Package / Case |
TO-71-6 |
| Mounting Style |
Through Hole |
| Drain-Source Current at Vgs=0 |
6.5 mA |
| Gate-Source Cutoff Voltage |
6 mV |
| Id - Continuous Drain Current |
2 mA |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
400 mW |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
40 V |
| Vgs - Gate-Source Breakdown Voltage |
– 40 V |
| Series |
LSK389 |
| Technology |
Si |
| Configuration |
Dual |
In stock
| Manufacturer |
Microchip |
|---|---|
| Package Body Material |
METAL |
| Manufacturer Part Number |
2N5114 |
| Ihs Manufacturer |
MICROSEMI CORP |
| Factory Pack Quantity:Factory Pack Quantity |
1 |
| Brand |
Microchip Technology |
| Base Product Number |
2N5114 |
| Transistor Element Material |
SILICON |
| Package |
Bulk |
| Number of Terminals |
3 |
| Supplier Device Package |
TO-18 (TO-206AA) |
| Number of Pins |
3 |
| Surface Mount |
NO |
| Package / Case |
TO-18-3 |
| Mounting Type |
Through Hole |
| Operating Temperature-Max |
200 °C |
| Type |
JFET |
| Mounting Style |
Through Hole |
| Package Description |
TO-18, 3 PIN |
| Package Shape |
ROUND |
| Package Style |
CYLINDRICAL |
| Part Life Cycle Code |
Active |
| Part Package Code |
BCY |
| Product Status |
Active |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.08 |
| Rohs Code |
No |
| Operating Temperature |
-65°C ~ 200°C (TJ) |
| Packaging |
Bulk |
| Series |
Military, MIL-PRF-19500 |
| JESD-609 Code |
e0 |
| Pbfree Code |
No |
| ECCN Code |
EAR99 |
| Mfr |
Microchip Technology |
| Mount |
Through Hole |
| Power - Max |
500 mW |
| Pin Count |
3 |
| Operating Mode |
DEPLETION MODE |
| Element Configuration |
Single |
| Configuration |
SINGLE |
| Number of Elements |
1 |
| Qualification Status |
Not Qualified |
| JESD-30 Code |
O-MBCY-W3 |
| Reach Compliance Code |
unknown |
| Max Operating Temperature |
200 °C |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
WIRE |
| Terminal Position |
BOTTOM |
| Technology |
Si |
| Subcategory |
Transistors |
| HTS Code |
8541.21.00.95 |
| FET Type |
P-Channel |
| FET Technology |
JUNCTION |
| Terminal Finish |
TIN LEAD |
| Drain-source On Resistance-Max |
75 Ω |
| Min Operating Temperature |
-65 °C |
| Drain to Source Voltage (Vdss) |
30 V |
| Polarity/Channel Type |
P-CHANNEL |
| Product Type |
JFETs |
| JEDEC-95 Code |
TO-206AA |
| Gate to Source Voltage (Vgs) |
30 V |
| Input Capacitance (Ciss) (Max) @ Vds |
25pF @ 15V |
| Resistance - RDS(On) |
75 Ohms |
| DS Breakdown Voltage-Min |
30 V |
| Power Dissipation-Max (Abs) |
0.5 W |
| Feedback Cap-Max (Crss) |
7 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) |
90 mA @ 18 V |
| Voltage - Cutoff (VGS off) @ Id |
10 V @ 1 nA |
| Voltage - Breakdown (V(BR)GSS) |
30 V |
| Product Category |
JFET |
In stock
| Manufacturer |
NEC |
|---|---|
| Ihs Manufacturer |
RENESAS ELECTRONICS CORP |
| Manufacturer Package Code |
PLSP0003ZD-A3 |
| Manufacturer Part Number |
2SK425-T1B-A |
| Package Description |
, |
| Part Life Cycle Code |
Obsolete |
| Part Package Code |
MM |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.83 |
| Rohs Code |
Yes |
| Pbfree Code |
Yes |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Pin Count |
3 |
| Brand Name |
Renesas |
In stock
| Manufacturer |
Qorvo |
|---|---|
| Package / Case |
TO-247-4 |
| Mounting Style |
SMD/SMT |
| Id - Continuous Drain Current |
37.4 A |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
203 W |
| Rds On - Drain-Source Resistance |
44 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
750 V |
| Series |
UJ4C |
| Technology |
SiC |
In stock
| Manufacturer |
Qorvo |
|---|---|
| Package / Case |
TO-247-4 |
| Mounting Style |
Through Hole |
| Id - Continuous Drain Current |
28 A |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
155 W |
| Rds On - Drain-Source Resistance |
74 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
750 V |
| Series |
UJ4C |
| Technology |
SiC |
| Configuration |
Single |
In stock
| Manufacturer |
Qorvo |
|---|---|
| Package / Case |
D2PAK-7L |
| Mounting Style |
SMD/SMT |
| Id - Continuous Drain Current |
104 A |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
357 W |
| Rds On - Drain-Source Resistance |
11 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
750 V |
| Technology |
SiC |
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