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Manufacturer |
Vishay Siliconix |
---|---|
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-206AA, TO-18-3 Metal Can |
Supplier Device Package |
TO-206AA (TO-18) |
Packaging |
Tube |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
RoHS Status |
Non-RoHS Compliant |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
625 mW |
FET Type |
N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
500 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
4.5 V @ 1 µA |
Voltage - Breakdown (V(BR)GSS) |
25 V |
Resistance - RDS(On) |
3 Ohms |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
SOT-23-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
350 mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
14pF @ 20V |
Current - Drain (Idss) @ Vds (Vgs=0) |
25 mA @ 20 V |
Voltage - Cutoff (VGS off) @ Id |
2 V @ 1 nA |
Voltage - Breakdown (V(BR)GSS) |
30 V |
Resistance - RDS(On) |
60 Ohms |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
3 mA |
Gate-Source Cutoff Voltage |
2.5 V |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
350 mW |
Transistor Polarity |
N-Channel |
Vgs - Gate-Source Breakdown Voltage |
30 V |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
12 mA |
Gate-Source Cutoff Voltage |
– 2 V |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSBF510 NPoS |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
30 mA |
Gate-Source Cutoff Voltage |
– 2 V |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSK170 |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
TO-71-6 |
Mounting Style |
Through Hole |
Drain-Source Current at Vgs=0 |
6.5 mA |
Gate-Source Cutoff Voltage |
6 mV |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSK389 |
Technology |
Si |
Configuration |
Dual |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOIC-8 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
12 mA |
Gate-Source Cutoff Voltage |
6 mV |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSK389 |
Configuration |
Dual |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
TO-247-3 |
Mounting Style |
SMD/SMT |
Id - Continuous Drain Current |
47 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
242 W |
Rds On - Drain-Source Resistance |
33 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Series |
UJ4C |
Technology |
SiC |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
D2PAK-7L |
Mounting Style |
SMD/SMT |
Id - Continuous Drain Current |
104 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
357 W |
Rds On - Drain-Source Resistance |
11 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Technology |
SiC |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
D2PAK-7L |
Mounting Style |
SMD/SMT |
Id - Continuous Drain Current |
72 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
259 W |
Rds On - Drain-Source Resistance |
18 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Technology |
SiC |
In stock
Manufacturer |
Texas Instruments |
---|---|
Package Style |
CYLINDRICAL |
Number of Terminals |
3 |
Transistor Element Material |
SILICON |
Ihs Manufacturer |
MICROSEMI CORP |
Manufacturer Part Number |
2N4860 |
Operating Temperature-Max |
200 °C |
Package Body Material |
METAL |
Package Description |
TO-18, 3 PIN |
ECCN Code |
EAR99 |
Surface Mount |
NO |
Part Life Cycle Code |
Active |
Part Package Code |
BCY |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Risk Rank |
5.05 |
Rohs Code |
No |
JESD-609 Code |
e0 |
Pbfree Code |
No |
Package Shape |
ROUND |
Terminal Finish |
TIN LEAD |
Number of Elements |
1 |
Configuration |
SINGLE |
Terminal Form |
WIRE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Pin Count |
3 |
Reference Standard |
MIL-19500/385 |
JESD-30 Code |
O-MBCY-W3 |
Qualification Status |
Not Qualified |
HTS Code |
8541.21.00.95 |
Terminal Position |
BOTTOM |
Operating Mode |
DEPLETION MODE |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-206AA |
Drain-source On Resistance-Max |
40 Ω |
DS Breakdown Voltage-Min |
30 V |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
1.8 W |
Feedback Cap-Max (Crss) |
8 pF |
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