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| Manufacturer |
Vishay Siliconix |
|---|---|
| JESD-609 Code |
e3 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-206AC, TO-52-3 Metal Can |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Terminal Position |
BOTTOM |
| Factory Lead Time |
9 Weeks |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW INSERTION LOSS |
| HTS Code |
8541.21.00.95 |
| Max Power Dissipation |
500mW |
| Published |
2005 |
| Terminal Form |
WIRE |
| Transistor Application |
SWITCHING |
| Input Capacitance (Ciss) (Max) @ Vds |
160pF @ 0V |
| Pin Count |
3 |
| JESD-30 Code |
O-MBCY-W3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
DEPLETION MODE |
| Case Connection |
GATE |
| FET Type |
N-Channel |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate to Source Voltage (Vgs) |
-30V |
| Drain-source On Resistance-Max |
7Ohm |
| FET Technology |
JUNCTION |
| Feedback Cap-Max (Crss) |
30 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) |
200mA @ 10V |
| Voltage - Cutoff (VGS off) @ Id |
1.5V @ 3nA |
| Voltage - Breakdown (V(BR)GSS) |
30V |
| Resistance - RDS(On) |
7Ohm |
| RoHS Status |
ROHS3 Compliant |
In stock
| Manufacturer |
Central |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
Die |
| Supplier Device Package |
Die |
| Mfr |
Central Semiconductor Corp |
| Package |
Tray |
| Product Status |
Active |
| Operating Temperature |
-65°C ~ 175°C (TJ) |
| Power - Max |
1.8 W |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
20pF @ 20V |
| Drain to Source Voltage (Vdss) |
40 V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
25 mA @ 20 V |
| Voltage - Cutoff (VGS off) @ Id |
2 V @ 1 nA |
| Voltage - Breakdown (V(BR)GSS) |
40 V |
| Resistance - RDS(On) |
60 Ohms |
| Current Drain (Id) - Max |
50 mA |
In stock
| Manufacturer |
Fairchild |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package |
TO-92-3 |
| Mfr |
Fairchild Semiconductor |
| Package |
Bulk |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Power - Max |
625 mW |
| FET Type |
N-Channel |
| Current - Drain (Idss) @ Vds (Vgs=0) |
2 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id |
500 mV @ 1 µA |
| Voltage - Breakdown (V(BR)GSS) |
35 V |
| Resistance - RDS(On) |
100 Ohms |
In stock
| Manufacturer |
Fairchild |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package |
TO-92-3 |
| Mfr |
Fairchild Semiconductor |
| Package |
Bulk |
| Product Status |
Obsolete |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Power - Max |
350 mW |
| FET Type |
P-Channel |
| Current - Drain (Idss) @ Vds (Vgs=0) |
2 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id |
1 V @ 10 nA |
| Voltage - Breakdown (V(BR)GSS) |
30 V |
| Resistance - RDS(On) |
250 Ohms |
In stock
| Manufacturer |
Fairchild |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package |
SOT-23-3 |
| Mfr |
Fairchild Semiconductor |
| Package |
Bulk |
| Product Status |
Obsolete |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Power - Max |
350 mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
14pF @ 20V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
25 mA @ 20 V |
| Voltage - Cutoff (VGS off) @ Id |
2 V @ 1 nA |
| Voltage - Breakdown (V(BR)GSS) |
30 V |
| Resistance - RDS(On) |
60 Ohms |
In stock
| Manufacturer |
Linearin |
|---|---|
| Package / Case |
SOT-23-3 |
| Mounting Style |
SMD/SMT |
| Drain-Source Current at Vgs=0 |
3 mA |
| Gate-Source Cutoff Voltage |
2.5 V |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
350 mW |
| Transistor Polarity |
N-Channel |
| Vgs - Gate-Source Breakdown Voltage |
30 V |
| Technology |
Si |
| Configuration |
Single |
In stock
| Manufacturer |
Linearin |
|---|---|
| Package / Case |
SOT-23-3 |
| Mounting Style |
SMD/SMT |
| Drain-Source Current at Vgs=0 |
6.5 mA |
| Gate-Source Cutoff Voltage |
– 2 V |
| Id - Continuous Drain Current |
2 mA |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
400 mW |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
40 V |
| Vgs - Gate-Source Breakdown Voltage |
– 40 V |
| Technology |
Si |
| Configuration |
Single |
In stock
| Manufacturer |
Linearin |
|---|---|
| Package / Case |
SOT-23-3 |
| Mounting Style |
SMD/SMT |
| Drain-Source Current at Vgs=0 |
12 mA |
| Gate-Source Cutoff Voltage |
– 2 V |
| Id - Continuous Drain Current |
2 mA |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
400 mW |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
40 V |
| Vgs - Gate-Source Breakdown Voltage |
– 40 V |
| Series |
LSBF510 NPoS |
| Technology |
Si |
| Configuration |
Single |
In stock
| Manufacturer |
Linearin |
|---|---|
| Package / Case |
TO-71-6 |
| Mounting Style |
Through Hole |
| Drain-Source Current at Vgs=0 |
6.5 mA |
| Gate-Source Cutoff Voltage |
6 mV |
| Id - Continuous Drain Current |
2 mA |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
400 mW |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
40 V |
| Vgs - Gate-Source Breakdown Voltage |
– 40 V |
| Series |
LSK389 |
| Technology |
Si |
| Configuration |
Dual |
In stock
| Manufacturer |
Linearin |
|---|---|
| Package / Case |
SOT-23-6 |
| Mounting Style |
SMD/SMT |
| Drain-Source Current at Vgs=0 |
5 mA |
| Gate-Source Cutoff Voltage |
8 mV |
| Id - Continuous Drain Current |
2 mA |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
500 mW |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
60 V |
| Vgs - Gate-Source Breakdown Voltage |
– 60 V |
| Technology |
Si |
| Configuration |
Dual |
In stock
| Manufacturer |
Qorvo |
|---|---|
| Package / Case |
D2PAK-7L |
| Mounting Style |
SMD/SMT |
| Id - Continuous Drain Current |
44 A |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
197 W |
| Rds On - Drain-Source Resistance |
33 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
750 V |
| Technology |
SiC |
In stock
| Manufacturer |
Qorvo |
|---|---|
| Package / Case |
TO-247-4 |
| Mounting Style |
Through Hole |
| Id - Continuous Drain Current |
28 A |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
155 W |
| Rds On - Drain-Source Resistance |
74 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
750 V |
| Series |
UJ4C |
| Technology |
SiC |
| Configuration |
Single |
In stock
| Manufacturer |
Vishay |
|---|---|
| Package Height |
1.02(Max) |
| Lead Shape |
Gull-wing |
| Maximum Drain Gate Voltage (V) |
-35 |
| Maximum Gate Source Voltage (V) |
-35 |
| Maximum Operating Temperature (°C) |
150 |
| Maximum Power Dissipation (mW) |
350 |
| Military |
No |
| Minimum Operating Temperature (°C) |
-55 |
| Mounting |
Surface Mount |
| Automotive |
No |
| Package Width |
1.4(Max) |
| Package Length |
3.04(Max) |
| PCB changed |
3 |
| Standard Package Name |
SOT |
| Supplier Package |
SOT-23 |
| Packaging |
Tape and Reel |
| Part Status |
Obsolete |
| Pin Count |
3 |
| Configuration |
Single |
| Channel Type |
N |
| RoHS Status |
RoHS non-compliant |
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