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Manufacturer |
Microchip |
---|---|
Surface Mount |
NO |
Brand |
Microchip Technology |
Mfr |
Microchip Technology |
Package |
Bulk |
Product Status |
Active |
Series |
* |
JESD-609 Code |
e0 |
Terminal Finish |
Tin/Lead (Sn/Pb) |
Subcategory |
Transistors |
Reach Compliance Code |
unknown |
Polarity/Channel Type |
N-CHANNEL |
Product Type |
JFETs |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.25 W |
Product Category |
JFET |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
SOT-23-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
350 mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
14pF @ 20V |
Current - Drain (Idss) @ Vds (Vgs=0) |
25 mA @ 20 V |
Voltage - Cutoff (VGS off) @ Id |
2 V @ 1 nA |
Voltage - Breakdown (V(BR)GSS) |
30 V |
Resistance - RDS(On) |
60 Ohms |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
SOT-23-3 |
Base Product Number |
MMBFJ1 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
225 mW |
FET Type |
P-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
7 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
3 V @ 10 nA |
Voltage - Breakdown (V(BR)GSS) |
30 V |
Resistance - RDS(On) |
125 Ohms |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
350 mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
30pF @ 10V (VGS) |
Current - Drain (Idss) @ Vds (Vgs=0) |
150 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
4 V @ 3 nA |
Voltage - Breakdown (V(BR)GSS) |
25 V |
Resistance - RDS(On) |
5 Ohms |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
3 mA |
Gate-Source Cutoff Voltage |
2.5 V |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
350 mW |
Transistor Polarity |
N-Channel |
Vgs - Gate-Source Breakdown Voltage |
30 V |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
12 mA |
Gate-Source Cutoff Voltage |
– 2 V |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSBF510 NPoS |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
30 mA |
Gate-Source Cutoff Voltage |
– 2 V |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSK170 |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOIC-8 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
12 mA |
Gate-Source Cutoff Voltage |
6 mV |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSK389 |
Configuration |
Dual |
In stock
Manufacturer |
Microchip |
---|---|
Package Body Material |
METAL |
Manufacturer Part Number |
2N5114 |
Ihs Manufacturer |
MICROSEMI CORP |
Factory Pack Quantity:Factory Pack Quantity |
1 |
Brand |
Microchip Technology |
Base Product Number |
2N5114 |
Transistor Element Material |
SILICON |
Package |
Bulk |
Number of Terminals |
3 |
Supplier Device Package |
TO-18 (TO-206AA) |
Number of Pins |
3 |
Surface Mount |
NO |
Package / Case |
TO-18-3 |
Mounting Type |
Through Hole |
Operating Temperature-Max |
200 °C |
Type |
JFET |
Mounting Style |
Through Hole |
Package Description |
TO-18, 3 PIN |
Package Shape |
ROUND |
Package Style |
CYLINDRICAL |
Part Life Cycle Code |
Active |
Part Package Code |
BCY |
Product Status |
Active |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Risk Rank |
5.08 |
Rohs Code |
No |
Operating Temperature |
-65°C ~ 200°C (TJ) |
Packaging |
Bulk |
Series |
Military, MIL-PRF-19500 |
JESD-609 Code |
e0 |
Pbfree Code |
No |
ECCN Code |
EAR99 |
Mfr |
Microchip Technology |
Mount |
Through Hole |
Power - Max |
500 mW |
Pin Count |
3 |
Operating Mode |
DEPLETION MODE |
Element Configuration |
Single |
Configuration |
SINGLE |
Number of Elements |
1 |
Qualification Status |
Not Qualified |
JESD-30 Code |
O-MBCY-W3 |
Reach Compliance Code |
unknown |
Max Operating Temperature |
200 °C |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Terminal Form |
WIRE |
Terminal Position |
BOTTOM |
Technology |
Si |
Subcategory |
Transistors |
HTS Code |
8541.21.00.95 |
FET Type |
P-Channel |
FET Technology |
JUNCTION |
Terminal Finish |
TIN LEAD |
Drain-source On Resistance-Max |
75 Ω |
Min Operating Temperature |
-65 °C |
Drain to Source Voltage (Vdss) |
30 V |
Polarity/Channel Type |
P-CHANNEL |
Product Type |
JFETs |
JEDEC-95 Code |
TO-206AA |
Gate to Source Voltage (Vgs) |
30 V |
Input Capacitance (Ciss) (Max) @ Vds |
25pF @ 15V |
Resistance - RDS(On) |
75 Ohms |
DS Breakdown Voltage-Min |
30 V |
Power Dissipation-Max (Abs) |
0.5 W |
Feedback Cap-Max (Crss) |
7 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
90 mA @ 18 V |
Voltage - Cutoff (VGS off) @ Id |
10 V @ 1 nA |
Voltage - Breakdown (V(BR)GSS) |
30 V |
Product Category |
JFET |
In stock
Manufacturer |
NEC |
---|---|
Ihs Manufacturer |
RENESAS ELECTRONICS CORP |
Manufacturer Package Code |
PLSP0003ZD-A3 |
Manufacturer Part Number |
2SK425-T1B-A |
Package Description |
, |
Part Life Cycle Code |
Obsolete |
Part Package Code |
MM |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Risk Rank |
5.83 |
Rohs Code |
Yes |
Pbfree Code |
Yes |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
Pin Count |
3 |
Brand Name |
Renesas |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
TO-247-4 |
Mounting Style |
SMD/SMT |
Id - Continuous Drain Current |
37.4 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
203 W |
Rds On - Drain-Source Resistance |
44 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Series |
UJ4C |
Technology |
SiC |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
D2PAK-7L |
Mounting Style |
SMD/SMT |
Id - Continuous Drain Current |
104 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
357 W |
Rds On - Drain-Source Resistance |
11 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Technology |
SiC |
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