Vishay Siliconix SI4848DY-T1-E3

SKU: SI4848DY-T1-E3-11

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Manufacturer Part :
SI4848DY-T1-E3
Manufacturer :
Vishay Siliconix
Package :
8-SOIC (0.154, 3.90mm Width)
RoHS :
ROHS3 Compliant
SI4848DY-T1-E3 Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Weight

506.605978mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

2.7A Ta

Drive Voltage (Max Rds On, Min Rds On)

6V 10V

Number of Elements

1

Power Dissipation (Max)

1.5W Ta

Peak Reflow Temperature (Cel)

260

Factory Lead Time

14 Weeks

Packaging

Tape & Reel (TR)

Published

2008

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Resistance

85mOhm

Terminal Position

DUAL

Terminal Form

GULL WING

Turn Off Delay Time

24 ns

Reach Compliance Code

unknown

Vgs (Max)

±20V

Fall Time (Typ)

10 ns

Qualification Status

Not Qualified

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.5W

Turn On Delay Time

9 ns

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

85m Ω @ 3.5A, 10V

Vgs(th) (Max) @ Id

2V @ 250μA (Min)

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Rise Time

10ns

Time@Peak Reflow Temperature-Max (s)

40

Pin Count

8

Continuous Drain Current (ID)

3.7A

Threshold Voltage

2V

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

2.7A

Drain to Source Breakdown Voltage

150V

Max Junction Temperature (Tj)

150°C

Nominal Vgs

2 V

Height

1.75mm

Length

4.9784mm

Width

3.9878mm

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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