Infineon Technologies IRL520NSTRLPBF

SKU: IRL520NSTRLPBF-11

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Manufacturer Part :
IRL520NSTRLPBF
Manufacturer :
Infineon Technologies
Package :
RoHS :
ROHS3 Compliant
IRL520NSTRLPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Series

HEXFET®

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

10A Tc

Drive Voltage (Max Rds On, Min Rds On)

4V 10V

Number of Elements

1

Power Dissipation (Max)

3.8W Ta 48W Tc

Turn Off Delay Time

23 ns

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

JESD-30 Code

R-PSSO-G2

Factory Lead Time

12 Weeks

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Termination

SMD/SMT

ECCN Code

EAR99

Resistance

180MOhm

Voltage - Rated DC

100V

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

10A

Time@Peak Reflow Temperature-Max (s)

30

Published

2004

Element Configuration

Single

Continuous Drain Current (ID)

10A

Threshold Voltage

2V

Case Connection

DRAIN

Turn On Delay Time

4 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

180m Ω @ 6A, 10V

Vgs(th) (Max) @ Id

2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

440pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

20nC @ 5V

Rise Time

35ns

Vgs (Max)

±16V

Fall Time (Typ)

22 ns

Operating Mode

ENHANCEMENT MODE

Power Dissipation

3.8W

Gate to Source Voltage (Vgs)

16V

Drain to Source Breakdown Voltage

100V

Dual Supply Voltage

100V

Avalanche Energy Rating (Eas)

85 mJ

Recovery Time

160 ns

Nominal Vgs

2 V

Height

4.826mm

Length

10.668mm

Width

9.65mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Contains Lead, Lead Free

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