ON Semiconductor FDB088N08

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Description

Specification

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Manufacturer	ON Semiconductor
Packaging	Tape & Reel (TR)
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	120A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	160W Tc
Turn Off Delay Time	244 ns
JESD-30 Code	R-PSSO-G2
Factory Lead Time	8 Weeks
Published	2004
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Terminal Form	GULL WING
Operating Temperature	-55°C~175°C TJ
Element Configuration	Single
Fall Time (Typ)	102 ns
Continuous Drain Current (ID)	120A
Case Connection	DRAIN
Turn On Delay Time	45 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.8m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6595pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	118nC @ 10V
Rise Time	158ns
Vgs (Max)	±20V
Operating Mode	ENHANCEMENT MODE
Power Dissipation	160W
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	85A
Drain-source On Resistance-Max	0.0088Ohm
Drain to Source Breakdown Voltage	75V
Height	4.83mm
Length	10.67mm
Width	11.33mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

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Package / Case	SOT-523
Number of Pins	3
Supplier Device Package	SOT-523
Weight	2.012816mg
Operating Temperature	-55°C~150°C TJ
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Moisture Sensitivity Level (MSL)	1 (Unlimited)
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Drain to Source Voltage (Vdss)	20V
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Continuous Drain Current (ID)	630mA
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	60.67pF @ 16V
Drain to Source Breakdown Voltage	20V
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Manufacturer	Infineon Technologies
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Manufacturer Package Identifier	PG-SOT223-4
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Published	1999
Series	SIPMOS®
JESD-609 Code	e3
Pbfree Code	yes
Power Dissipation	1.8W
Factory Lead Time	10 Weeks
Number of Terminations	4
Termination	SMD/SMT
ECCN Code	EAR99
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Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.8W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Part Status	Active
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Gate to Source Voltage (Vgs)	20V
Rds On (Max) @ Id, Vgs	800m Ω @ 1.17A, 10V
Vgs(th) (Max) @ Id	2V @ 160μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	160pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.17A Ta
Gate Charge (Qg) (Max) @ Vgs	7.8nC @ 10V
Rise Time	9ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	1.17A
Turn On Delay Time	24 ns
FET Type	P-Channel
Max Dual Supply Voltage	-60V
Drain-source On Resistance-Max	0.8Ohm
Drain to Source Breakdown Voltage	-60V
Dual Supply Voltage	-60V
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Max Junction Temperature (Tj)	150°C
Nominal Vgs	-1.5 V
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Manufacturer	Infineon Technologies
ECCN Code	EAR99
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2001
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JESD-609 Code	e3
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Case Connection	DRAIN
Factory Lead Time	12 Weeks
Resistance	8MOhm
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Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	110A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
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Current - Continuous Drain (Id) @ 25°C	110A Tc
Gate Charge (Qg) (Max) @ Vgs	146nC @ 10V
Rise Time	101ns
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Vgs (Max)	±20V
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Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	110A
Threshold Voltage	4V
FET Type	N-Channel
Transistor Application	SWITCHING
Drain Current-Max (Abs) (ID)	75A
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Avalanche Energy Rating (Eas)	264 mJ
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Max Junction Temperature (Tj)	175°C
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SKU: IRF5210PBF-11

Manufacturer	Infineon Technologies
Termination	Through Hole
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1998
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Case Connection	DRAIN
Number of Terminations	3
ECCN Code	EAR99
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Voltage - Rated DC	-100V
Peak Reflow Temperature (Cel)	250
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Lead Pitch	2.54mm
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	200W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
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Contact Plating	Tin
Factory Lead Time	12 Weeks
Threshold Voltage	-4V
FET Type	P-Channel
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Vgs(th) (Max) @ Id	4V @ 250μA
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Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Rise Time	86ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	81 ns
Turn-Off Delay Time	79 ns
Continuous Drain Current (ID)	-40A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Turn On Delay Time	17 ns
Drain to Source Breakdown Voltage	-100V
Dual Supply Voltage	-100V
Avalanche Energy Rating (Eas)	780 mJ
Recovery Time	260 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	-4 V
Height	19.8mm
Length	10.5156mm
Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Transistor Application	SWITCHING
Lead Free	Lead Free

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SKU: IRFR024NTRPBF-11

Manufacturer	Infineon Technologies
Termination	SMD/SMT
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Case Connection	DRAIN
Factory Lead Time	12 Weeks
ECCN Code	EAR99
Resistance	75mOhm
Voltage - Rated DC	55V
Terminal Form	GULL WING
Current Rating	17A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	45W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	38W
Number of Terminations	2
Turn On Delay Time	4.9 ns
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Rds On (Max) @ Id, Vgs	75m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	370pF @ 25V
Current - Continuous Drain (Id) @ 25°C	17A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	34ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	17A
Threshold Voltage	4V
FET Type	N-Channel
Transistor Application	SWITCHING
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	68A
Dual Supply Voltage	55V
Recovery Time	83 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Height	2.52mm
Length	6.7056mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

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SKU: IRFR1205TRPBF-11

Manufacturer	Infineon Technologies
Termination	SMD/SMT
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power Dissipation	69W
Factory Lead Time	12 Weeks
ECCN Code	EAR99
Resistance	27mOhm
Voltage - Rated DC	55V
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	37A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	107W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Number of Terminations	2
Case Connection	DRAIN
Threshold Voltage	4V
JEDEC-95 Code	TO-252AA
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 26A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	44A Tc
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Rise Time	69ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	47 ns
Continuous Drain Current (ID)	37A
Turn On Delay Time	7.3 ns
FET Type	N-Channel
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	20A
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Recovery Time	98 ns
Nominal Vgs	4 V
Height	2.3876mm
Length	6.7056mm
Width	6.8mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

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Infineon Technologies IRFR220NTRPBF

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In stock

SKU: IRFR220NTRPBF-11

Manufacturer	Infineon Technologies
Turn On Delay Time	6.4 ns
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	600MOhm
Termination	SMD/SMT
Voltage - Rated DC	200V
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	5A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	43W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	43W
Case Connection	DRAIN
Contact Plating	Tin
Factory Lead Time	12 Weeks
Drain Current-Max (Abs) (ID)	5A
Drain to Source Breakdown Voltage	200V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5A Tc
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	5A
Threshold Voltage	4V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Transistor Application	SWITCHING
FET Type	N-Channel
Pulsed Drain Current-Max (IDM)	20A
Dual Supply Voltage	200V
Avalanche Energy Rating (Eas)	46 mJ
Recovery Time	140 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Switching Current	5A
Height	2.52mm
Length	6.7056mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Rds On (Max) @ Id, Vgs	600m Ω @ 2.9A, 10V
Lead Free	Lead Free

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SKU: IRLL2705TRPBF-11

Manufacturer	Infineon Technologies
ECCN Code	EAR99
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Element Configuration	Single
Factory Lead Time	12 Weeks
Resistance	40mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Voltage - Rated DC	55V
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	3.8A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1W Ta
Number of Terminations	4
Operating Mode	ENHANCEMENT MODE
Continuous Drain Current (ID)	3.8A
Threshold Voltage	2V
Turn On Delay Time	6.2 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	40m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	870pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.8A Ta
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±16V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	35 ns
Power Dissipation	2.1W
Case Connection	DRAIN
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	5.2A
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Recovery Time	88 ns
Max Junction Temperature (Tj)	150°C
Nominal Vgs	2 V
Height	1.8mm
Length	6.6802mm
Width	6.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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ON Semiconductor FDB3632

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In stock

SKU: FDB3632-11

Manufacturer	ON Semiconductor
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Operating Mode	ENHANCEMENT MODE
Part Status	Active
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	9MOhm
Voltage - Rated DC	100V
Terminal Form	GULL WING
Current Rating	44A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	310W Tc
Element Configuration	Single
Contact Plating	Tin
Factory Lead Time	8 Weeks
Turn-Off Delay Time	96 ns
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	39ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	46 ns
Continuous Drain Current (ID)	80A
Threshold Voltage	4V
Power Dissipation	310W
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Height	5.08mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	30 ns
Lead Free	Lead Free

ON Semiconductor FDD16AN08A0-F085 Real Image

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ON Semiconductor FDD16AN08A0-F085

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SKU: FDD16AN08A0-F085-11

Manufacturer	ON Semiconductor
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
JESD-609 Code	e3
Pbfree Code	yes
Power Dissipation	135W
Mount	Surface Mount
Number of Terminations	2
Terminal Finish	Tin (Sn)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	135W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Part Status	Active
Case Connection	DRAIN
Vgs (Max)	±20V
Fall Time (Typ)	22 ns
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	16m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1874pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs	47nC @ 10V
Rise Time	54ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Turn On Delay Time	8 ns
FET Type	N-Channel
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	50A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	9A
Drain to Source Breakdown Voltage	75V
Avalanche Energy Rating (Eas)	95 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

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ON Semiconductor FDI2532

Rated 0 out of 5

In stock

SKU: FDI2532-11

Manufacturer	ON Semiconductor
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2002
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power Dissipation-Max	310W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	16mOhm @ 33A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5870pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8A Ta 79A Tc
Gate Charge (Qg) (Max) @ Vgs	107nC @ 10V
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V

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ON Semiconductor FDS6675BZ

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