Vishay Siliconix SIA436DJ-T1-GE3

SKU: SIA436DJ-T1-GE3-11

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Manufacturer Part :
SIA436DJ-T1-GE3
Manufacturer :
Vishay Siliconix
Package :
PowerPAK® SC-70-6
RoHS :
ROHS3 Compliant
SIA436DJ-T1-GE3 Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

PowerPAK® SC-70-6

Number of Pins

6

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

12A Tc

Drive Voltage (Max Rds On, Min Rds On)

1.2V 4.5V

Number of Elements

1

Power Dissipation (Max)

3.5W Ta 19W Tc

Element Configuration

Single

Factory Lead Time

14 Weeks

Packaging

Digi-Reel®

Published

2013

Series

TrenchFET®

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Position

DUAL

JESD-30 Code

S-PDSO-N3

Number of Channels

1

Turn Off Delay Time

30 ns

Operating Mode

ENHANCEMENT MODE

Fall Time (Typ)

8 ns

Continuous Drain Current (ID)

12A

Turn On Delay Time

11 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

9.4m Ω @ 15.7A, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1508pF @ 4V

Gate Charge (Qg) (Max) @ Vgs

25.2nC @ 5V

Rise Time

10ns

Vgs (Max)

±5V

Power Dissipation

3.5W

Case Connection

DRAIN

Threshold Voltage

350mV

Gate to Source Voltage (Vgs)

5V

Drain-source On Resistance-Max

0.0094Ohm

Drain to Source Breakdown Voltage

8V

Pulsed Drain Current-Max (IDM)

50A

Height

750μm

Length

2.05mm

Width

2.05mm

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

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