Infineon Technologies BSC014N03LSGATMA1

SKU: BSC014N03LSGATMA1-11

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Manufacturer Part :
BSC014N03LSGATMA1
Manufacturer :
Infineon Technologies
Package :
8-PowerTDFN
RoHS :
ROHS3 Compliant
BSC014N03LSGATMA1 Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Packaging

Tape & Reel (TR)

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

34A Ta 100A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

2.5W Ta 139W Tc

Turn Off Delay Time

51 ns

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

3 Weeks

Published

2006

Series

OptiMOS™

JESD-609 Code

e3

Pbfree Code

no

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Terminal Position

DUAL

Terminal Form

FLAT

Operating Temperature

-55°C~150°C TJ

Reach Compliance Code

not_compliant

Vgs(th) (Max) @ Id

2.2V @ 250μA

Halogen Free

Halogen Free

JESD-30 Code

R-PDSO-F5

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Power Dissipation

139W

Case Connection

DRAIN

Turn On Delay Time

13 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

1.4m Ω @ 30A, 10V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

8

Input Capacitance (Ciss) (Max) @ Vds

10000pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

131nC @ 10V

Rise Time

8.6ns

Vgs (Max)

±20V

Continuous Drain Current (ID)

34A

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

30V

Drain-source On Resistance-Max

0.0021Ohm

Pulsed Drain Current-Max (IDM)

400A

Avalanche Energy Rating (Eas)

290 mJ

RoHS Status

ROHS3 Compliant

Lead Free

Contains Lead

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