ON Semiconductor FQPF6N80C

SKU: FQPF6N80C-11

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Manufacturer Part :
FQPF6N80C
Manufacturer :
ON Semiconductor
Package :
TO-220-3 Full Pack
RoHS :
ROHS3 Compliant
FQPF6N80C Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Weight

2.27g

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

5.5A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

51W Tc

Turn Off Delay Time

47 ns

Current Rating

5.5A

Factory Lead Time

9 Weeks

Published

2003

Series

QFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Resistance

2.5Ohm

Terminal Finish

Tin (Sn)

Voltage - Rated DC

800V

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

Continuous Drain Current (ID)

5.5A

Threshold Voltage

5V

Case Connection

ISOLATED

Turn On Delay Time

26 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

2.5 Ω @ 2.75A, 10V

Vgs(th) (Max) @ Id

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1310pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Rise Time

65ns

Vgs (Max)

±30V

Fall Time (Typ)

44 ns

Operating Mode

ENHANCEMENT MODE

Power Dissipation

51W

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

30V

Drain to Source Breakdown Voltage

800V

Pulsed Drain Current-Max (IDM)

22A

Avalanche Energy Rating (Eas)

680 mJ

Height

9.19mm

Length

10.16mm

Width

4.7mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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