Infineon Technologies IRFH8337TRPBF

SKU: IRFH8337TRPBF-11

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Manufacturer Part :
IRFH8337TRPBF
Manufacturer :
Infineon Technologies
Package :
8-PowerTDFN
RoHS :
ROHS3 Compliant
IRFH8337TRPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Operating Temperature

-55°C~150°C TJ

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

12A Ta 35A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

3.2W Ta 27W Tc

Terminal Position

DUAL

Factory Lead Time

17 Weeks

Packaging

Tape & Reel (TR)

Published

2011

Series

HEXFET®

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Additional Feature

HIGH RELIABILITY

Turn Off Delay Time

5.7 ns

Terminal Form

FLAT

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Rise Time

12ns

Operating Mode

ENHANCEMENT MODE

Power Dissipation

3.2W

Case Connection

DRAIN

Turn On Delay Time

6.4 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

12.8m Ω @ 16.2A, 10V

Vgs(th) (Max) @ Id

2.35V @ 25μA

Input Capacitance (Ciss) (Max) @ Vds

790pF @ 10V

JESD-30 Code

R-PDSO-F5

Configuration

SINGLE WITH BUILT-IN DIODE

Vgs (Max)

±20V

Fall Time (Typ)

4.1 ns

Continuous Drain Current (ID)

12A

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

30V

Pulsed Drain Current-Max (IDM)

65A

Nominal Vgs

1.8 V

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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