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| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STD30N |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Current - Continuous Drain (Id) @ 25℃ |
32A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
50W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
22 ns |
| Series |
DeepGATE™, STripFET™ VII |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Fall Time (Typ) |
5.6 ns |
| Continuous Drain Current (ID) |
32A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
24m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1270pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 10V |
| Rise Time |
17.5ns |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Height |
2.4mm |
| Length |
6.6mm |
| Width |
6.2mm |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
12 ns |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2003 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Number of Channels |
1 |
| Factory Lead Time |
16 Weeks |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
3.5Ohm |
| Voltage - Rated DC |
50V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
200mA |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Part Status |
Active |
| Voltage |
50V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
25 ns |
| Current |
2A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300mW |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.5 Ω @ 220mA, 10V |
| Vgs(th) (Max) @ Id |
1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C |
200mA Ta |
| Rise Time |
10ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Power Dissipation-Max |
300mW Ta |
| Element Configuration |
Single |
| Turn-Off Delay Time |
20 ns |
| Continuous Drain Current (ID) |
200mA |
| Threshold Voltage |
1.2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
50V |
| Nominal Vgs |
1.2 V |
| Feedback Cap-Max (Crss) |
8 pF |
| Height |
1mm |
| Length |
2.9mm |
| Width |
1.3mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1997 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Part Status |
Active |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Pin Count |
3 |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Voltage |
240V |
| Power Dissipation-Max |
360mW Ta |
| Contact Plating |
Tin |
| Factory Lead Time |
10 Weeks |
| Threshold Voltage |
1.4V |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
14 Ω @ 100mA, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 56μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
77pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
110mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
3.1nC @ 10V |
| Rise Time |
3.1ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Turn-Off Delay Time |
13.7 ns |
| Continuous Drain Current (ID) |
100mA |
| Turn On Delay Time |
3.3 ns |
| Power Dissipation |
360mW |
| Max Dual Supply Voltage |
240V |
| Drain to Source Breakdown Voltage |
240V |
| Dual Supply Voltage |
240V |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
1.4 V |
| Feedback Cap-Max (Crss) |
4.2 pF |
| Height |
1.1mm |
| Width |
3.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2001 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Case Connection |
DRAIN |
| Factory Lead Time |
12 Weeks |
| Resistance |
8MOhm |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
110A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
200W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
200W |
| Termination |
SMD/SMT |
| Turn On Delay Time |
14 ns |
| JEDEC-95 Code |
TO-252 |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
8m Ω @ 62A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3247pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
110A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
146nC @ 10V |
| Rise Time |
101ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
65 ns |
| Turn-Off Delay Time |
50 ns |
| Continuous Drain Current (ID) |
110A |
| Threshold Voltage |
4V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Drain Current-Max (Abs) (ID) |
75A |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Avalanche Energy Rating (Eas) |
264 mJ |
| Recovery Time |
104 ns |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
4 V |
| Height |
5.084mm |
| Length |
10.668mm |
| Width |
10.54mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Case Connection |
DRAIN |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
1997 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
100mOhm |
| Voltage - Rated DC |
-55V |
| Peak Reflow Temperature (Cel) |
250 |
| Current Rating |
-19A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Lead Pitch |
2.54mm |
| Number of Elements |
1 |
| Power Dissipation-Max |
68W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
56W |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Threshold Voltage |
-4V |
| JEDEC-95 Code |
TO-220AB |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
620pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
19A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Rise Time |
55ns |
| Drain to Source Voltage (Vdss) |
55V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
41 ns |
| Turn-Off Delay Time |
30 ns |
| Continuous Drain Current (ID) |
-19A |
| FET Type |
P-Channel |
| Turn On Delay Time |
13 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-55V |
| Pulsed Drain Current-Max (IDM) |
68A |
| Dual Supply Voltage |
-55V |
| Recovery Time |
82 ns |
| Nominal Vgs |
-4 V |
| Height |
8.77mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
SWITCHING |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn On Delay Time |
6.4 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
600MOhm |
| Termination |
SMD/SMT |
| Voltage - Rated DC |
200V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
5A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
43W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
43W |
| Case Connection |
DRAIN |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Drain Current-Max (Abs) (ID) |
5A |
| Drain to Source Breakdown Voltage |
200V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
5A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Rise Time |
11ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Turn-Off Delay Time |
20 ns |
| Continuous Drain Current (ID) |
5A |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Transistor Application |
SWITCHING |
| FET Type |
N-Channel |
| Pulsed Drain Current-Max (IDM) |
20A |
| Dual Supply Voltage |
200V |
| Avalanche Energy Rating (Eas) |
46 mJ |
| Recovery Time |
140 ns |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
4 V |
| Switching Current |
5A |
| Height |
2.52mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 2.9A, 10V |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Resistance |
15MOhm |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Active |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Factory Lead Time |
12 Weeks |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
350W Tc |
| Element Configuration |
Single |
| Power Dissipation |
350W |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
15mOhm @ 33A, 10V |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Input Capacitance (Ciss) (Max) @ Vds |
4460pF @ 25V |
| Drain to Source Breakdown Voltage |
150V |
| Input Capacitance |
4.46nF |
| Rise Time |
60ns |
| Drain to Source Voltage (Vdss) |
150V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
35 ns |
| Turn-Off Delay Time |
25 ns |
| Continuous Drain Current (ID) |
85A |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
30V |
| Current - Continuous Drain (Id) @ 25°C |
85A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Max Junction Temperature (Tj) |
175°C |
| Drain to Source Resistance |
12mOhm |
| Rds On Max |
15 mΩ |
| Nominal Vgs |
5 V |
| Height |
5.084mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Nexperia USA Inc. |
|---|---|
| Published |
2005 |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Surface Mount |
YES |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| HTS Code |
8541.21.00.75 |
| Factory Lead Time |
4 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Packaging |
Tape & Reel (TR) |
| Terminal Position |
DUAL |
| Rds On (Max) @ Id, Vgs |
1.6 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 250μA |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max |
350mW Ta |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Terminal Form |
GULL WING |
| Pin Count |
3 |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C |
360mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
0.8nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
60V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| DS Breakdown Voltage-Min |
60V |
| RoHS Status |
ROHS3 Compliant |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Power Dissipation |
235W |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.31247g |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
UniFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
94MOhm |
| Terminal Form |
GULL WING |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
235W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Contact Plating |
Tin |
| Factory Lead Time |
7 Weeks |
| Turn-Off Delay Time |
75 ns |
| Continuous Drain Current (ID) |
33A |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
94m Ω @ 16.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2135pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
33A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
| Rise Time |
230ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
120 ns |
| Turn On Delay Time |
35 ns |
| Case Connection |
DRAIN |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
250V |
| Nominal Vgs |
3 V |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
11.33mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Pbfree Code |
yes |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins |
6 |
| Weight |
36mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Series |
PowerTrench® |
| Power Dissipation |
1.6W |
| Factory Lead Time |
13 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
1.6W Ta |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| JESD-609 Code |
e3 |
| Turn On Delay Time |
7 ns |
| Continuous Drain Current (ID) |
4.9mA |
| Threshold Voltage |
-2.2V |
| Rds On (Max) @ Id, Vgs |
42m Ω @ 4.9A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1005pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
4.9A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
24nC @ 10V |
| Rise Time |
4ns |
| Drain to Source Voltage (Vdss) |
30V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
4 ns |
| Turn-Off Delay Time |
33 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Gate to Source Voltage (Vgs) |
25V |
| Drain Current-Max (Abs) (ID) |
4.9A |
| Drain-source On Resistance-Max |
0.042Ohm |
| Drain to Source Breakdown Voltage |
-30V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.1mm |
| Length |
3mm |
| Width |
1.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
260.37mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Power Dissipation |
135W |
| Mount |
Surface Mount |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Terminal Form |
GULL WING |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
135W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Part Status |
Active |
| Case Connection |
DRAIN |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
22 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
16m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1874pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
9A Ta 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
47nC @ 10V |
| Rise Time |
54ns |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Turn-Off Delay Time |
32 ns |
| Continuous Drain Current (ID) |
50A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain to Source Breakdown Voltage |
75V |
| Avalanche Energy Rating (Eas) |
95 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Package / Case |
SC-75, SOT-416 |
| Surface Mount |
YES |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Element Configuration |
Single |
| Factory Lead Time |
5 Weeks |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
127mOhm |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
20V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Current Rating |
915mA |
| Pin Count |
3 |
| Number of Elements |
1 |
| Power Dissipation-Max |
300mW Tj |
| Part Status |
Active |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
4.4 ns |
| Turn-Off Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
230m Ω @ 600mA, 4.5V |
| Vgs(th) (Max) @ Id |
1.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
110pF @ 16V |
| Current - Continuous Drain (Id) @ 25°C |
915mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
1.82nC @ 4.5V |
| Rise Time |
4.4ns |
| Drive Voltage (Max Rds On,Min Rds On) |
1.5V 4.5V |
| Vgs (Max) |
±6V |
| Power Dissipation |
300mW |
| Turn On Delay Time |
3.7 ns |
| Continuous Drain Current (ID) |
915mA |
| Threshold Voltage |
760mV |
| Gate to Source Voltage (Vgs) |
6V |
| Drain to Source Breakdown Voltage |
20V |
| Nominal Vgs |
760 mV |
| Height |
800μm |
| Length |
800μm |
| Width |
1.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Renesas Electronics America |
|---|---|
| Pin Count |
4 |
| Package / Case |
TO-3P-3, SC-65-3 |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Active |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| FET Type |
N-Channel |
| Power Dissipation-Max |
150W Ta |
| Rds On (Max) @ Id, Vgs |
240m Ω @ 12.5A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
25A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
| Drain to Source Voltage (Vdss) |
500V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
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