Vishay Siliconix SI1050X-T1-GE3

SKU: SI1050X-T1-GE3-11

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Manufacturer Part :
SI1050X-T1-GE3
Manufacturer :
Vishay Siliconix
Package :
SOT-563, SOT-666
RoHS :
ROHS3 Compliant
SI1050X-T1-GE3 Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Number of Pins

6

Weight

32.006612mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

1.34A Ta

Drive Voltage (Max Rds On, Min Rds On)

1.5V 4.5V

Number of Elements

1

Power Dissipation (Max)

236mW Ta

Terminal Form

FLAT

Factory Lead Time

14 Weeks

Packaging

Tape & Reel (TR)

Published

2014

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Terminal Position

DUAL

Turn Off Delay Time

26 ns

Peak Reflow Temperature (Cel)

260

Rise Time

35ns

Drain to Source Voltage (Vdss)

8V

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

6.8 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

86m Ω @ 1.34A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

585pF @ 4V

Gate Charge (Qg) (Max) @ Vgs

11.6nC @ 5V

Time@Peak Reflow Temperature-Max (s)

40

Pin Count

6

Vgs (Max)

±5V

Fall Time (Typ)

35 ns

Continuous Drain Current (ID)

1.34A

Gate to Source Voltage (Vgs)

5V

Pulsed Drain Current-Max (IDM)

6A

DS Breakdown Voltage-Min

8V

Nominal Vgs

5 V

Height

600μm

Length

1.7mm

Width

1.2mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

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