- Pick up from the Woodmart Store
To pick up today
Free
- Courier delivery
Our courier will deliver to the specified address
2-3 Days
Free
- DHL Courier delivery
DHL courier will deliver to the specified address
2-3 Days
Free
Hurry and get discounts on all Apple devices up to 20%
Sale_coupon_15
To pick up today
Free
Our courier will deliver to the specified address
2-3 Days
Free
DHL courier will deliver to the specified address
2-3 Days
Free
Payment Methods:
Manufacturer |
IXYS |
---|---|
Part Status |
Active |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
280W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2013 |
JESD-609 Code |
e3 |
Factory Lead Time |
24 Weeks |
Terminal Finish |
Matte Tin (Sn) |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Reach Compliance Code |
not_compliant |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
6 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1576pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
44.5nC @ 10V |
Drain to Source Voltage (Vdss) |
1500V |
Vgs (Max) |
±30V |
Continuous Drain Current (ID) |
4A |
RoHS Status |
ROHS3 Compliant |
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Weight |
7.994566mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2003 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Number of Channels |
1 |
Factory Lead Time |
16 Weeks |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
3.5Ohm |
Voltage - Rated DC |
50V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
200mA |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Number of Elements |
1 |
Part Status |
Active |
Voltage |
50V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
25 ns |
Current |
2A |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
300mW |
Turn On Delay Time |
20 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
3.5 Ω @ 220mA, 10V |
Vgs(th) (Max) @ Id |
1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 10V |
Current - Continuous Drain (Id) @ 25°C |
200mA Ta |
Rise Time |
10ns |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Power Dissipation-Max |
300mW Ta |
Element Configuration |
Single |
Turn-Off Delay Time |
20 ns |
Continuous Drain Current (ID) |
200mA |
Threshold Voltage |
1.2V |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
50V |
Nominal Vgs |
1.2 V |
Feedback Cap-Max (Crss) |
8 pF |
Height |
1mm |
Length |
2.9mm |
Width |
1.3mm |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Part Status |
Active |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
SOT-523 |
Number of Pins |
3 |
Supplier Device Package |
SOT-523 |
Weight |
2.012816mg |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
FET Type |
N-Channel |
Factory Lead Time |
14 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Resistance |
400MOhm |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
280mW Ta |
Element Configuration |
Single |
Power Dissipation |
280mW |
Turn On Delay Time |
5.1 ns |
Published |
2012 |
Rds On (Max) @ Id, Vgs |
400mOhm @ 600mA, 4.5V |
Threshold Voltage |
1V |
Gate to Source Voltage (Vgs) |
6V |
Current - Continuous Drain (Id) @ 25°C |
630mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
0.74nC @ 4.5V |
Rise Time |
7.4ns |
Drain to Source Voltage (Vdss) |
20V |
Drive Voltage (Max Rds On,Min Rds On) |
1.8V 4.5V |
Vgs (Max) |
±6V |
Fall Time (Typ) |
12.3 ns |
Turn-Off Delay Time |
26.7 ns |
Continuous Drain Current (ID) |
630mA |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
60.67pF @ 16V |
Drain to Source Breakdown Voltage |
20V |
Input Capacitance |
60.67pF |
Drain to Source Resistance |
300mOhm |
Rds On Max |
400 mΩ |
Height |
800μm |
Length |
1.7mm |
Width |
850μm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-261-4, TO-261AA |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Manufacturer Package Identifier |
PG-SOT223-4 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Cut Tape (CT) |
Published |
1999 |
Series |
SIPMOS® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Power Dissipation |
1.8W |
Factory Lead Time |
10 Weeks |
Number of Terminations |
4 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
4 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
1.8W Ta |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Part Status |
Active |
Case Connection |
DRAIN |
Threshold Voltage |
-1.5V |
Gate to Source Voltage (Vgs) |
20V |
Rds On (Max) @ Id, Vgs |
800m Ω @ 1.17A, 10V |
Vgs(th) (Max) @ Id |
2V @ 160μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
160pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
1.17A Ta |
Gate Charge (Qg) (Max) @ Vgs |
7.8nC @ 10V |
Rise Time |
9ns |
Drain to Source Voltage (Vdss) |
60V |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
19 ns |
Turn-Off Delay Time |
32 ns |
Continuous Drain Current (ID) |
1.17A |
Turn On Delay Time |
24 ns |
FET Type |
P-Channel |
Max Dual Supply Voltage |
-60V |
Drain-source On Resistance-Max |
0.8Ohm |
Drain to Source Breakdown Voltage |
-60V |
Dual Supply Voltage |
-60V |
Recovery Time |
46 ns |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
-1.5 V |
Height |
1.8mm |
Length |
6.5mm |
Width |
6.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
ECCN Code |
EAR99 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2001 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Case Connection |
DRAIN |
Factory Lead Time |
12 Weeks |
Resistance |
8MOhm |
Voltage - Rated DC |
55V |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
110A |
Time@Peak Reflow Temperature-Max (s) |
30 |
JESD-30 Code |
R-PSSO-G2 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
200W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
200W |
Termination |
SMD/SMT |
Turn On Delay Time |
14 ns |
JEDEC-95 Code |
TO-252 |
Gate to Source Voltage (Vgs) |
20V |
Rds On (Max) @ Id, Vgs |
8m Ω @ 62A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
3247pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
110A Tc |
Gate Charge (Qg) (Max) @ Vgs |
146nC @ 10V |
Rise Time |
101ns |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
65 ns |
Turn-Off Delay Time |
50 ns |
Continuous Drain Current (ID) |
110A |
Threshold Voltage |
4V |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Drain Current-Max (Abs) (ID) |
75A |
Drain to Source Breakdown Voltage |
55V |
Dual Supply Voltage |
55V |
Avalanche Energy Rating (Eas) |
264 mJ |
Recovery Time |
104 ns |
Max Junction Temperature (Tj) |
175°C |
Nominal Vgs |
4 V |
Height |
5.084mm |
Length |
10.668mm |
Width |
10.54mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead, Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Termination |
SMD/SMT |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2004 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Case Connection |
DRAIN |
Factory Lead Time |
12 Weeks |
ECCN Code |
EAR99 |
Resistance |
75mOhm |
Voltage - Rated DC |
55V |
Terminal Form |
GULL WING |
Current Rating |
17A |
JESD-30 Code |
R-PSSO-G2 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
45W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
38W |
Number of Terminations |
2 |
Turn On Delay Time |
4.9 ns |
JEDEC-95 Code |
TO-252AA |
Gate to Source Voltage (Vgs) |
20V |
Rds On (Max) @ Id, Vgs |
75m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
370pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
17A Tc |
Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
Rise Time |
34ns |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
27 ns |
Turn-Off Delay Time |
19 ns |
Continuous Drain Current (ID) |
17A |
Threshold Voltage |
4V |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Drain to Source Breakdown Voltage |
55V |
Pulsed Drain Current-Max (IDM) |
68A |
Dual Supply Voltage |
55V |
Recovery Time |
83 ns |
Max Junction Temperature (Tj) |
175°C |
Nominal Vgs |
4 V |
Height |
2.52mm |
Length |
6.7056mm |
Width |
6.22mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead, Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
ECCN Code |
EAR99 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-261-4, TO-261AA |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
1997 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Element Configuration |
Single |
Factory Lead Time |
12 Weeks |
Resistance |
40mOhm |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
LOGIC LEVEL COMPATIBLE |
Voltage - Rated DC |
55V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
3.8A |
Time@Peak Reflow Temperature-Max (s) |
30 |
JESD-30 Code |
R-PDSO-G4 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
1W Ta |
Number of Terminations |
4 |
Operating Mode |
ENHANCEMENT MODE |
Continuous Drain Current (ID) |
3.8A |
Threshold Voltage |
2V |
Turn On Delay Time |
6.2 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
40m Ω @ 3.8A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
3.8A Ta |
Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
Rise Time |
12ns |
Drive Voltage (Max Rds On,Min Rds On) |
4V 10V |
Vgs (Max) |
±16V |
Fall Time (Typ) |
22 ns |
Turn-Off Delay Time |
35 ns |
Power Dissipation |
2.1W |
Case Connection |
DRAIN |
Gate to Source Voltage (Vgs) |
16V |
Drain Current-Max (Abs) (ID) |
5.2A |
Drain to Source Breakdown Voltage |
55V |
Dual Supply Voltage |
55V |
Recovery Time |
88 ns |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
2 V |
Height |
1.8mm |
Length |
6.6802mm |
Width |
6.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Surface Mount |
YES |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Cut Tape (CT) |
Published |
2007 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Element Configuration |
Single |
Part Status |
Active |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
7.5Ohm |
Voltage - Rated DC |
60V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
115mA |
Pin Count |
3 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
225mW Ta |
Contact Plating |
Tin |
Factory Lead Time |
10 Weeks |
Continuous Drain Current (ID) |
115mA |
Power Dissipation |
225mW |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
7.5 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
115mA Tc |
Drive Voltage (Max Rds On,Min Rds On) |
5V 10V |
Vgs (Max) |
±20V |
Turn-Off Delay Time |
40 ns |
Threshold Voltage |
1V |
Gate to Source Voltage (Vgs) |
20V |
Operating Mode |
ENHANCEMENT MODE |
Drain to Source Breakdown Voltage |
60V |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
2.5 V |
Feedback Cap-Max (Crss) |
5 pF |
Height |
1.11mm |
Length |
3.04mm |
Width |
1.4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
20 ns |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Power Dissipation |
235W |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
1.31247g |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2004 |
Series |
UniFET™ |
Pbfree Code |
yes |
Part Status |
Active |
JESD-609 Code |
e3 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Resistance |
94MOhm |
Terminal Form |
GULL WING |
JESD-30 Code |
R-PSSO-G2 |
Number of Elements |
1 |
Power Dissipation-Max |
235W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Contact Plating |
Tin |
Factory Lead Time |
7 Weeks |
Turn-Off Delay Time |
75 ns |
Continuous Drain Current (ID) |
33A |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
94m Ω @ 16.5A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2135pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
33A Tc |
Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
Rise Time |
230ns |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±30V |
Fall Time (Typ) |
120 ns |
Turn On Delay Time |
35 ns |
Case Connection |
DRAIN |
Threshold Voltage |
3V |
Gate to Source Voltage (Vgs) |
30V |
Drain to Source Breakdown Voltage |
250V |
Nominal Vgs |
3 V |
Height |
4.83mm |
Length |
10.67mm |
Width |
11.33mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
FET Type |
N-Channel |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Element Configuration |
Single |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
130mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2003 |
Series |
PowerTrench® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Pbfree Code |
yes |
Number of Terminations |
8 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Resistance |
19MOhm |
Terminal Finish |
Tin (Sn) |
Voltage - Rated DC |
100V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
7.5A |
Number of Elements |
1 |
Power Dissipation-Max |
2.5W Ta |
Mount |
Surface Mount |
Factory Lead Time |
12 Weeks |
Turn-Off Delay Time |
37 ns |
Continuous Drain Current (ID) |
7.5A |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
23m Ω @ 7.5A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2015pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
7.5A Ta |
Gate Charge (Qg) (Max) @ Vgs |
37nC @ 10V |
Rise Time |
20ns |
Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
27 ns |
Power Dissipation |
2.5W |
Operating Mode |
ENHANCEMENT MODE |
Threshold Voltage |
4V |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
100V |
Dual Supply Voltage |
100V |
Nominal Vgs |
4 V |
Height |
1.5mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
14 ns |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Pbfree Code |
yes |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
130mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2001 |
Series |
PowerTrench® |
Operating Mode |
ENHANCEMENT MODE |
Factory Lead Time |
18 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Resistance |
21.8MOhm |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Base Part Number |
FDS6675 |
Number of Elements |
1 |
Power Dissipation-Max |
2.5W Ta |
Element Configuration |
Single |
JESD-609 Code |
e4 |
Power Dissipation |
2.5W |
Turn-Off Delay Time |
120 ns |
Continuous Drain Current (ID) |
11A |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
13m Ω @ 11A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2470pF @ 15V |
Current - Continuous Drain (Id) @ 25°C |
11A Ta |
Gate Charge (Qg) (Max) @ Vgs |
62nC @ 10V |
Rise Time |
7.8ns |
Drain to Source Voltage (Vdss) |
30V |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±25V |
Fall Time (Typ) |
60 ns |
Turn On Delay Time |
3 ns |
FET Type |
P-Channel |
Threshold Voltage |
-2V |
Gate to Source Voltage (Vgs) |
25V |
Drain to Source Breakdown Voltage |
-30V |
Dual Supply Voltage |
-30V |
Nominal Vgs |
-2 V |
Feedback Cap-Max (Crss) |
500 pF |
Height |
1.5mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Pbfree Code |
yes |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
130mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2007 |
Series |
PowerTrench® |
Power Dissipation-Max |
2.5W Ta |
Factory Lead Time |
18 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Resistance |
12.5MOhm |
Additional Feature |
LOGIC LEVEL COMPATIBLE |
Voltage - Rated DC |
30V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
11A |
Number of Elements |
1 |
JESD-609 Code |
e4 |
Element Configuration |
Single |
Fall Time (Typ) |
9 ns |
Turn-Off Delay Time |
28 ns |
Turn On Delay Time |
9 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
12.5m Ω @ 11A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1205pF @ 15V |
Current - Continuous Drain (Id) @ 25°C |
11A Ta |
Gate Charge (Qg) (Max) @ Vgs |
16nC @ 5V |
Rise Time |
5ns |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
2.5W |
Continuous Drain Current (ID) |
11A |
Threshold Voltage |
1.9V |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
30V |
Dual Supply Voltage |
30V |
Height |
1.5mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mounting Type |
Surface Mount |
Package / Case |
SC-75, SOT-416 |
Surface Mount |
YES |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2005 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Element Configuration |
Single |
Factory Lead Time |
5 Weeks |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
127mOhm |
Terminal Finish |
Tin (Sn) |
Voltage - Rated DC |
20V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
915mA |
Pin Count |
3 |
Number of Elements |
1 |
Power Dissipation-Max |
300mW Tj |
Part Status |
Active |
Operating Mode |
ENHANCEMENT MODE |
Fall Time (Typ) |
4.4 ns |
Turn-Off Delay Time |
25 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
230m Ω @ 600mA, 4.5V |
Vgs(th) (Max) @ Id |
1.1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
110pF @ 16V |
Current - Continuous Drain (Id) @ 25°C |
915mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
1.82nC @ 4.5V |
Rise Time |
4.4ns |
Drive Voltage (Max Rds On,Min Rds On) |
1.5V 4.5V |
Vgs (Max) |
±6V |
Power Dissipation |
300mW |
Turn On Delay Time |
3.7 ns |
Continuous Drain Current (ID) |
915mA |
Threshold Voltage |
760mV |
Gate to Source Voltage (Vgs) |
6V |
Drain to Source Breakdown Voltage |
20V |
Nominal Vgs |
760 mV |
Height |
800μm |
Length |
800μm |
Width |
1.6mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Inquiry List
No account yet?
Create an Account
Reviews
Clear filtersThere are no reviews yet.