Vishay Siliconix IRF840LC

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Description

Specification

Processor

Manufacturer	Vishay Siliconix
Power Dissipation (Max)	125W Tc
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Weight	6.000006g
Current - Continuous Drain (Id) @ 25℃	8A Tc
Number of Channels	1
Factory Lead Time	13 Weeks
Turn Off Delay Time	27 ns
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Drive Voltage (Max Rds On, Min Rds On)	10V
Element Configuration	Single
Fall Time (Typ)	19 ns
Continuous Drain Current (ID)	8A
Rds On (Max) @ Id, Vgs	850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Rise Time	25ns
Drain to Source Voltage (Vdss)	500V
Vgs (Max)	±30V
Turn On Delay Time	12 ns
FET Type	N-Channel
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Input Capacitance	1.1nF
Drain to Source Resistance	650mOhm
Rds On Max	850 mΩ
Height	9.01mm
Length	10.41mm
Width	4.7mm
RoHS Status	Non-RoHS Compliant

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Part Status	Active
Contact Plating	Tin
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Package / Case	SOT-523
Number of Pins	3
Supplier Device Package	SOT-523
Weight	2.012816mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
FET Type	N-Channel
Factory Lead Time	14 Weeks
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	400MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	280mW Ta
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Turn On Delay Time	5.1 ns
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Rds On (Max) @ Id, Vgs	400mOhm @ 600mA, 4.5V
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Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±6V
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Continuous Drain Current (ID)	630mA
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	60.67pF @ 16V
Drain to Source Breakdown Voltage	20V
Input Capacitance	60.67pF
Drain to Source Resistance	300mOhm
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Manufacturer	Infineon Technologies
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Manufacturer Package Identifier	PG-SOT223-4
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	1999
Series	SIPMOS®
JESD-609 Code	e3
Pbfree Code	yes
Power Dissipation	1.8W
Factory Lead Time	10 Weeks
Number of Terminations	4
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.8W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Part Status	Active
Case Connection	DRAIN
Threshold Voltage	-1.5V
Gate to Source Voltage (Vgs)	20V
Rds On (Max) @ Id, Vgs	800m Ω @ 1.17A, 10V
Vgs(th) (Max) @ Id	2V @ 160μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	160pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.17A Ta
Gate Charge (Qg) (Max) @ Vgs	7.8nC @ 10V
Rise Time	9ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	1.17A
Turn On Delay Time	24 ns
FET Type	P-Channel
Max Dual Supply Voltage	-60V
Drain-source On Resistance-Max	0.8Ohm
Drain to Source Breakdown Voltage	-60V
Dual Supply Voltage	-60V
Recovery Time	46 ns
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-1.5 V
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Manufacturer	Infineon Technologies
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
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JESD-609 Code	e3
Pbfree Code	yes
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ECCN Code	EAR99
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Terminal Form	GULL WING
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Number of Channels	1
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Vgs (Max)	±20V
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Drain-source On Resistance-Max	6Ohm
Drain to Source Breakdown Voltage	100V
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Radiation Hardening	No
RoHS Status	ROHS3 Compliant
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Manufacturer	Infineon Technologies
Termination	SMD/SMT
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
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JESD-609 Code	e3
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ECCN Code	EAR99
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Voltage - Rated DC	55V
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Peak Reflow Temperature (Cel)	260
Current Rating	37A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
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JEDEC-95 Code	TO-252AA
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Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	44A Tc
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Rise Time	69ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
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Continuous Drain Current (ID)	37A
Turn On Delay Time	7.3 ns
FET Type	N-Channel
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	20A
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Dual Supply Voltage	55V
Recovery Time	98 ns
Nominal Vgs	4 V
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Width	6.8mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
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Manufacturer	Infineon Technologies
ECCN Code	EAR99
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Element Configuration	Single
Factory Lead Time	12 Weeks
Resistance	40mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Voltage - Rated DC	55V
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	3.8A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1W Ta
Number of Terminations	4
Operating Mode	ENHANCEMENT MODE
Continuous Drain Current (ID)	3.8A
Threshold Voltage	2V
Turn On Delay Time	6.2 ns
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Rds On (Max) @ Id, Vgs	40m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
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Current - Continuous Drain (Id) @ 25°C	3.8A Ta
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±16V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	35 ns
Power Dissipation	2.1W
Case Connection	DRAIN
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	5.2A
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Recovery Time	88 ns
Max Junction Temperature (Tj)	150°C
Nominal Vgs	2 V
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Width	6.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
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Published	2005
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
HTS Code	8541.21.00.75
Factory Lead Time	4 Weeks
JESD-609 Code	e3
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ECCN Code	EAR99
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Power Dissipation-Max	350mW Ta
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SKU: 2N7002LT1G-11

Manufacturer	ON Semiconductor
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Element Configuration	Single
Part Status	Active
Number of Terminations	3
ECCN Code	EAR99
Resistance	7.5Ohm
Voltage - Rated DC	60V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	115mA
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	225mW Ta
Contact Plating	Tin
Factory Lead Time	10 Weeks
Continuous Drain Current (ID)	115mA
Power Dissipation	225mW
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Current - Continuous Drain (Id) @ 25°C	115mA Tc
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	40 ns
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Operating Mode	ENHANCEMENT MODE
Drain to Source Breakdown Voltage	60V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	2.5 V
Feedback Cap-Max (Crss)	5 pF
Height	1.11mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
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SKU: FDS6681Z-11

Manufacturer	ON Semiconductor
Part Status	Active
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	PowerTrench®
JESD-609 Code	e4
Element Configuration	Single
Pbfree Code	yes
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	4.6MOhm
Voltage - Rated DC	-30V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-20A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.5W Ta
Contact Plating	Tin
Factory Lead Time	18 Weeks
Turn-Off Delay Time	660 ns
Power Dissipation	2.5W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7540pF @ 15V
Current - Continuous Drain (Id) @ 25°C	20A Ta
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	380 ns
Continuous Drain Current (ID)	-20A
Threshold Voltage	-1.8V
Operating Mode	ENHANCEMENT MODE
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	30V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	1.8 V
Height	1.75mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	20 ns
Lead Free	Lead Free

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Rated 0 out of 5

In stock

SKU: FDS6690A-11

Manufacturer	ON Semiconductor
Pbfree Code	yes
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	PowerTrench®
Power Dissipation-Max	2.5W Ta
Factory Lead Time	18 Weeks
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	12.5MOhm
Additional Feature	LOGIC LEVEL COMPATIBLE
Voltage - Rated DC	30V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	11A
Number of Elements	1
JESD-609 Code	e4
Element Configuration	Single
Fall Time (Typ)	9 ns
Turn-Off Delay Time	28 ns
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12.5m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1205pF @ 15V
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	16nC @ 5V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Continuous Drain Current (ID)	11A
Threshold Voltage	1.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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ON Semiconductor FDV304P

Rated 0 out of 5

In stock

SKU: FDV304P-11

Manufacturer	ON Semiconductor
Element Configuration	Single
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Number of Terminations	3
Termination	SMD/SMT
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Resistance	1.5Ohm
Voltage - Rated DC	-25V
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-460mA
Time@Peak Reflow Temperature-Max (s)	30
Number of Elements	1
Number of Channels	1
Voltage	25V
Power Dissipation-Max	350mW Ta
Contact Plating	Tin
Factory Lead Time	10 Weeks
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	460mA
Turn On Delay Time	7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.1 Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	63pF @ 10V
Current - Continuous Drain (Id) @ 25°C	460mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 4.5V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	8 ns
Operating Mode	ENHANCEMENT MODE
Current	46A
Threshold Voltage	-860mV
Gate to Source Voltage (Vgs)	-8V
Drain to Source Breakdown Voltage	-25V
Dual Supply Voltage	-25V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-860 mV
Height	1.11mm
Length	2.92mm
Width	1.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Power Dissipation	350mW
Lead Free	Lead Free

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ON Semiconductor NDS0605

Rated 0 out of 5

In stock

SKU: NDS0605-11

Manufacturer	ON Semiconductor
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	30mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2002
JESD-609 Code	e3
Pbfree Code	yes
Power Dissipation	360mW
Part Status	Active
Number of Terminations	3
ECCN Code	EAR99
Resistance	5Ohm
Voltage - Rated DC	-60V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-180mA
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	360mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Contact Plating	Tin
Factory Lead Time	8 Weeks
Continuous Drain Current (ID)	180mA
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	79pF @ 25V
Current - Continuous Drain (Id) @ 25°C	180mA Ta
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 10V
Rise Time	6.3ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6.3 ns
Turn-Off Delay Time	20 ns
Threshold Voltage	-1.7V
Gate to Source Voltage (Vgs)	20V
Turn On Delay Time	5 ns
Drain to Source Breakdown Voltage	-60V
Dual Supply Voltage	-60V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-1.7 V
Feedback Cap-Max (Crss)	5 pF
Height	1.2mm
Length	2.92mm
Width	3.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Transistor Application	SWITCHING
Lead Free	Lead Free

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ON Semiconductor NDS9407

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