STMicroelectronics STW50NB20

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Description

Specification

Processor

Manufacturer	STMicroelectronics
JESD-609 Code	e3
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	50A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	280W Tc
Operating Temperature	150°C TJ
Packaging	Tube
Current Rating	50A
Mount	Through Hole
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Voltage - Rated DC	200V
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Series	PowerMESH™
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds	3400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	115nC @ 10V
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	280W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	55m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Base Part Number	STW50N
Pin Count	3
Rise Time	65ns
Vgs (Max)	±30V
Fall Time (Typ)	27 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.055Ohm
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	200A
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

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ECCN Code	EAR99
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	3
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Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
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Weight	1.31247g
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JESD-609 Code	e3
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Turn-Off Delay Time	96 ns
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Vgs (Max)	±20V
Fall Time (Typ)	46 ns
Continuous Drain Current (ID)	80A
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SKU: FDS6675BZ-11

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Pbfree Code	yes
Contact Plating	Tin
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Weight	130mg
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Moisture Sensitivity Level (MSL)	1 (Unlimited)
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ECCN Code	EAR99
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Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
JESD-609 Code	e4
Power Dissipation	2.5W
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Rds On (Max) @ Id, Vgs	13m Ω @ 11A, 10V
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Input Capacitance (Ciss) (Max) @ Vds	2470pF @ 15V
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Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
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Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	60 ns
Turn On Delay Time	3 ns
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Threshold Voltage	-2V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	-30V
Nominal Vgs	-2 V
Feedback Cap-Max (Crss)	500 pF
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SKU: FDS6681Z-11

Manufacturer	ON Semiconductor
Part Status	Active
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	PowerTrench®
JESD-609 Code	e4
Element Configuration	Single
Pbfree Code	yes
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	4.6MOhm
Voltage - Rated DC	-30V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-20A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.5W Ta
Contact Plating	Tin
Factory Lead Time	18 Weeks
Turn-Off Delay Time	660 ns
Power Dissipation	2.5W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7540pF @ 15V
Current - Continuous Drain (Id) @ 25°C	20A Ta
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	380 ns
Continuous Drain Current (ID)	-20A
Threshold Voltage	-1.8V
Operating Mode	ENHANCEMENT MODE
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	30V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	1.8 V
Height	1.75mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	20 ns
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ON Semiconductor NDS0605

Rated 0 out of 5

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SKU: NDS0605-11

Manufacturer	ON Semiconductor
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	30mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2002
JESD-609 Code	e3
Pbfree Code	yes
Power Dissipation	360mW
Part Status	Active
Number of Terminations	3
ECCN Code	EAR99
Resistance	5Ohm
Voltage - Rated DC	-60V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-180mA
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	360mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Contact Plating	Tin
Factory Lead Time	8 Weeks
Continuous Drain Current (ID)	180mA
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	79pF @ 25V
Current - Continuous Drain (Id) @ 25°C	180mA Ta
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 10V
Rise Time	6.3ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6.3 ns
Turn-Off Delay Time	20 ns
Threshold Voltage	-1.7V
Gate to Source Voltage (Vgs)	20V
Turn On Delay Time	5 ns
Drain to Source Breakdown Voltage	-60V
Dual Supply Voltage	-60V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-1.7 V
Feedback Cap-Max (Crss)	5 pF
Height	1.2mm
Length	2.92mm
Width	3.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Transistor Application	SWITCHING
Lead Free	Lead Free

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ON Semiconductor NDS9407

Rated 0 out of 5

In stock

SKU: NDS9407-11

Manufacturer	ON Semiconductor
Operating Mode	ENHANCEMENT MODE
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	PowerTrench®
Pbfree Code	yes
Part Status	Active
JESD-609 Code	e3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Voltage - Rated DC	-60V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-3.3A
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Contact Plating	Tin
Factory Lead Time	11 Weeks
Continuous Drain Current (ID)	-3A
Threshold Voltage	-1.6V
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	732pF @ 30V
Current - Continuous Drain (Id) @ 25°C	3A Ta
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	10 ns
Turn On Delay Time	8 ns
Power Dissipation	2.5W
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	3A
Drain to Source Breakdown Voltage	-60V
Dual Supply Voltage	60V
Nominal Vgs	-1.6 V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
FET Type	P-Channel
Lead Free	Lead Free

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ON Semiconductor NTA4153NT1G

Rated 0 out of 5

In stock

SKU: NTA4153NT1G-11

Manufacturer	ON Semiconductor
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Element Configuration	Single
Factory Lead Time	5 Weeks
Number of Terminations	3
ECCN Code	EAR99
Resistance	127mOhm
Terminal Finish	Tin (Sn)
Voltage - Rated DC	20V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	915mA
Pin Count	3
Number of Elements	1
Power Dissipation-Max	300mW Tj
Part Status	Active
Operating Mode	ENHANCEMENT MODE
Fall Time (Typ)	4.4 ns
Turn-Off Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	230m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	110pF @ 16V
Current - Continuous Drain (Id) @ 25°C	915mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.82nC @ 4.5V
Rise Time	4.4ns
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±6V
Power Dissipation	300mW
Turn On Delay Time	3.7 ns
Continuous Drain Current (ID)	915mA
Threshold Voltage	760mV
Gate to Source Voltage (Vgs)	6V
Drain to Source Breakdown Voltage	20V
Nominal Vgs	760 mV
Height	800μm
Length	800μm
Width	1.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

ON Semiconductor NVR5198NLT1G Real Image

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ON Semiconductor NVR5198NLT1G

Rated 0 out of 5

In stock

SKU: NVR5198NLT1G-11

Manufacturer	ON Semiconductor
JESD-609 Code	e3
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Power Dissipation	1.5W
Factory Lead Time	4 Weeks
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Pin Count	3
Number of Channels	1
Power Dissipation-Max	900mW Ta
Element Configuration	Single
Published	2007
Turn On Delay Time	5 ns
Vgs (Max)	±20V
Fall Time (Typ)	2 ns
Vgs(th) (Max) @ Id	2.5V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	182pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.7A Ta
Gate Charge (Qg) (Max) @ Vgs	5.1nC @ 10V
Rise Time	7ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	155m Ω @ 1A, 10V
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	2.2A
Threshold Voltage	2.5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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Renesas Electronics America RJK5015DPK-00#T0

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