Vishay Siliconix TP0610K-T1-E3

SKU: TP0610K-T1-E3-11

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Manufacturer Part :
TP0610K-T1-E3
Manufacturer :
Vishay Siliconix
Package :
TO-236-3, SC-59, SOT-23-3
RoHS :
ROHS3 Compliant
TP0610K-T1-E3 Datasheet :
TP0610K-T1-E3

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Description

Specification

Processor

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Weight

1.437803g

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

185mA Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

350mW Ta

Turn Off Delay Time

35 ns

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

260

Mount

Surface Mount

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Resistance

10Ohm

Terminal Finish

Matte Tin (Sn)

Additional Feature

ESD PROTECTION, LOW THRESHOLD

Terminal Position

DUAL

Terminal Form

GULL WING

Packaging

Tape & Reel (TR)

Time@Peak Reflow Temperature-Max (s)

20

Vgs (Max)

±20V

Continuous Drain Current (ID)

-185mA

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

350mW

Turn On Delay Time

20 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

6 Ω @ 500mA, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

23pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

1.7nC @ 15V

Drain to Source Voltage (Vdss)

60V

Pin Count

3

Number of Channels

1

Threshold Voltage

-3V

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

-60V

Max Junction Temperature (Tj)

150°C

Nominal Vgs

-3 V

Height

1.12mm

Length

3.04mm

Width

1.4mm

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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