Vishay Siliconix SI7302DN-T1-GE3

SKU: SI7302DN-T1-GE3-11

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Manufacturer Part :
SI7302DN-T1-GE3
Manufacturer :
Vishay Siliconix
Package :
PowerPAK® 1212-8
RoHS :
ROHS3 Compliant
SI7302DN-T1-GE3 Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Siliconix

Terminal Form

C BEND

Package / Case

PowerPAK® 1212-8

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

8.4A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

3.8W Ta 52W Tc

Turn Off Delay Time

20 ns

Packaging

Tape & Reel (TR)

Published

2013

Operating Temperature

-55°C~150°C TJ

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

ECCN Code

EAR99

Terminal Finish

MATTE TIN

Terminal Position

DUAL

Mounting Type

Surface Mount

Mount

Surface Mount

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

645pF @ 15V

JESD-30 Code

S-XDSO-C5

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Power Dissipation

3.8W

Case Connection

DRAIN

Turn On Delay Time

10 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

320m Ω @ 2.3A, 10V

Time@Peak Reflow Temperature-Max (s)

40

Peak Reflow Temperature (Cel)

260

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Rise Time

10ns

Drain to Source Voltage (Vdss)

220V

Vgs (Max)

±20V

Fall Time (Typ)

15 ns

Continuous Drain Current (ID)

2.3A

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.32Ohm

Radiation Hardening

No

Pin Count

8

RoHS Status

ROHS3 Compliant

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