Vishay Siliconix SUP50N03-5M1P-GE3

SKU: SUP50N03-5M1P-GE3-11

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Manufacturer Part :
SUP50N03-5M1P-GE3
Manufacturer :
Vishay Siliconix
Package :
TO-220-3
RoHS :
ROHS3 Compliant
SUP50N03-5M1P-GE3 Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

6.000006g

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

50A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

2.7W Ta 59.5W Tc

Time@Peak Reflow Temperature-Max (s)

30

Mount

Through Hole

Packaging

Bulk

Published

2008

Series

TrenchFET®

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Peak Reflow Temperature (Cel)

260

Turn Off Delay Time

35 ns

Pin Count

3

Rise Time

9ns

Drain to Source Voltage (Vdss)

30V

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2.7W

Turn On Delay Time

8 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

5.1m Ω @ 22A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

2780pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

66nC @ 10V

Number of Channels

1

Element Configuration

Single

Vgs (Max)

±20V

Fall Time (Typ)

9 ns

Continuous Drain Current (ID)

50A

Threshold Voltage

1V

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

20V

Avalanche Energy Rating (Eas)

80 mJ

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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