Advanced Power Electronics AP1203AGMT-HF-3TR

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Processor

Manufacturer	Advanced Power Electronics

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Package / Case	TO-236-3, SC-59, SOT-23-3
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Published	2003
JESD-609 Code	e3
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Number of Channels	1
Factory Lead Time	16 Weeks
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ECCN Code	EAR99
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Peak Reflow Temperature (Cel)	260
Current Rating	200mA
Time@Peak Reflow Temperature-Max (s)	40
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Part Status	Active
Voltage	50V
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Turn On Delay Time	20 ns
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Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 10V
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Number of Terminations	3
Contact Plating	Tin
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Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
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JESD-609 Code	e3
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Time@Peak Reflow Temperature-Max (s)	30
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Power Dissipation-Max	79W Tc
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Manufacturer	Infineon Technologies
ECCN Code	EAR99
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
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Mounting Type	Surface Mount
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Surface Mount	YES
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Mounting Type	Surface Mount
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Surface Mount	YES
Number of Pins	3
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Packaging	Cut Tape (CT)
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JESD-609 Code	e3
Pbfree Code	yes
Element Configuration	Single
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Number of Terminations	3
ECCN Code	EAR99
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Voltage - Rated DC	60V
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Current Rating	115mA
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	225mW Ta
Contact Plating	Tin
Factory Lead Time	10 Weeks
Continuous Drain Current (ID)	115mA
Power Dissipation	225mW
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Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Current - Continuous Drain (Id) @ 25°C	115mA Tc
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
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Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Operating Mode	ENHANCEMENT MODE
Drain to Source Breakdown Voltage	60V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	2.5 V
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Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
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Mounting Type	Surface Mount
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
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ECCN Code	EAR99
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JESD-30 Code	R-PSSO-G2
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Power Dissipation-Max	235W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Contact Plating	Tin
Factory Lead Time	7 Weeks
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	33A
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	94m Ω @ 16.5A, 10V
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Input Capacitance (Ciss) (Max) @ Vds	2135pF @ 25V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	230ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	120 ns
Turn On Delay Time	35 ns
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Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	250V
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Radiation Hardening	No
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SKU: FDB3632-11

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Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Operating Mode	ENHANCEMENT MODE
Part Status	Active
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	9MOhm
Voltage - Rated DC	100V
Terminal Form	GULL WING
Current Rating	44A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	310W Tc
Element Configuration	Single
Contact Plating	Tin
Factory Lead Time	8 Weeks
Turn-Off Delay Time	96 ns
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	39ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	46 ns
Continuous Drain Current (ID)	80A
Threshold Voltage	4V
Power Dissipation	310W
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Height	5.08mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	30 ns
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ON Semiconductor FDI2532

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SKU: FDI2532-11

Manufacturer	ON Semiconductor
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2002
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power Dissipation-Max	310W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	16mOhm @ 33A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5870pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8A Ta 79A Tc
Gate Charge (Qg) (Max) @ Vgs	107nC @ 10V
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V

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ON Semiconductor FDS6681Z

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SKU: FDS6681Z-11

Manufacturer	ON Semiconductor
Part Status	Active
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	PowerTrench®
JESD-609 Code	e4
Element Configuration	Single
Pbfree Code	yes
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	4.6MOhm
Voltage - Rated DC	-30V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-20A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.5W Ta
Contact Plating	Tin
Factory Lead Time	18 Weeks
Turn-Off Delay Time	660 ns
Power Dissipation	2.5W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7540pF @ 15V
Current - Continuous Drain (Id) @ 25°C	20A Ta
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	380 ns
Continuous Drain Current (ID)	-20A
Threshold Voltage	-1.8V
Operating Mode	ENHANCEMENT MODE
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	30V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	1.8 V
Height	1.75mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	20 ns
Lead Free	Lead Free

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ON Semiconductor NDS9407

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SKU: NDS9407-11

Manufacturer	ON Semiconductor
Operating Mode	ENHANCEMENT MODE
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	PowerTrench®
Pbfree Code	yes
Part Status	Active
JESD-609 Code	e3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Voltage - Rated DC	-60V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-3.3A
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Contact Plating	Tin
Factory Lead Time	11 Weeks
Continuous Drain Current (ID)	-3A
Threshold Voltage	-1.6V
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	732pF @ 30V
Current - Continuous Drain (Id) @ 25°C	3A Ta
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	10 ns
Turn On Delay Time	8 ns
Power Dissipation	2.5W
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	3A
Drain to Source Breakdown Voltage	-60V
Dual Supply Voltage	60V
Nominal Vgs	-1.6 V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
FET Type	P-Channel
Lead Free	Lead Free

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ON Semiconductor NTA4153NT1G

Rated 0 out of 5

In stock

SKU: NTA4153NT1G-11

Manufacturer	ON Semiconductor
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Element Configuration	Single
Factory Lead Time	5 Weeks
Number of Terminations	3
ECCN Code	EAR99
Resistance	127mOhm
Terminal Finish	Tin (Sn)
Voltage - Rated DC	20V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	915mA
Pin Count	3
Number of Elements	1
Power Dissipation-Max	300mW Tj
Part Status	Active
Operating Mode	ENHANCEMENT MODE
Fall Time (Typ)	4.4 ns
Turn-Off Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	230m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	110pF @ 16V
Current - Continuous Drain (Id) @ 25°C	915mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.82nC @ 4.5V
Rise Time	4.4ns
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±6V
Power Dissipation	300mW
Turn On Delay Time	3.7 ns
Continuous Drain Current (ID)	915mA
Threshold Voltage	760mV
Gate to Source Voltage (Vgs)	6V
Drain to Source Breakdown Voltage	20V
Nominal Vgs	760 mV
Height	800μm
Length	800μm
Width	1.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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