Panasonic Electronic Components 2SK0615

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Manufacturer	Panasonic Electronic Components
HTS Code	8541.29.00.95
Package / Case	3-SIP
Number of Pins	3
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	500mA Ta
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	1W Ta
Operating Temperature	150°C TJ
Number of Elements	1
Packaging	Bulk
Published	2001
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Mounting Type	Through Hole
Mount	Through Hole
Rds On (Max) @ Id, Vgs	4 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Current Rating	500mA
Qualification Status	Not Qualified
Configuration	SINGLE
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Terminal Position	SINGLE
Voltage - Rated DC	80V
Input Capacitance (Ciss) (Max) @ Vds	45pF @ 10V
Vgs (Max)	20V
Continuous Drain Current (ID)	500mA
Drain Current-Max (Abs) (ID)	0.5A
Drain-source On Resistance-Max	4Ohm
RoHS Status	Non-RoHS Compliant
Reach Compliance Code	unknown
Lead Free	Contains Lead

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Manufacturer	Diodes Incorporated
Moisture Sensitivity Level (MSL)	1 (Unlimited)
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Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
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JESD-609 Code	e3
Pbfree Code	yes
Number of Channels	1
Factory Lead Time	16 Weeks
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ECCN Code	EAR99
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Peak Reflow Temperature (Cel)	260
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Vgs (Max)	±20V
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Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 10V
Current - Continuous Drain (Id) @ 25°C	200mA Ta
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Power Dissipation-Max	300mW Ta
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Contact Plating	Tin
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Package / Case	SOT-523
Number of Pins	3
Supplier Device Package	SOT-523
Weight	2.012816mg
Operating Temperature	-55°C~150°C TJ
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Factory Lead Time	14 Weeks
Moisture Sensitivity Level (MSL)	1 (Unlimited)
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Input Capacitance	60.67pF
Drain to Source Resistance	300mOhm
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Manufacturer	Infineon Technologies
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Manufacturer Package Identifier	PG-SOT223-4
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	1999
Series	SIPMOS®
JESD-609 Code	e3
Pbfree Code	yes
Power Dissipation	1.8W
Factory Lead Time	10 Weeks
Number of Terminations	4
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
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Number of Terminations	3
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
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JESD-609 Code	e3
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Termination	Through Hole
ECCN Code	EAR99
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JEDEC-95 Code	TO-220AB
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Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
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Transistor Application	SWITCHING
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-100V
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Avalanche Energy Rating (Eas)	250 mJ
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SKU: IRFR1205TRPBF-11

Manufacturer	Infineon Technologies
Termination	SMD/SMT
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power Dissipation	69W
Factory Lead Time	12 Weeks
ECCN Code	EAR99
Resistance	27mOhm
Voltage - Rated DC	55V
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	37A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	107W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Number of Terminations	2
Case Connection	DRAIN
Threshold Voltage	4V
JEDEC-95 Code	TO-252AA
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Rds On (Max) @ Id, Vgs	27m Ω @ 26A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
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Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Rise Time	69ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	47 ns
Continuous Drain Current (ID)	37A
Turn On Delay Time	7.3 ns
FET Type	N-Channel
Gate to Source Voltage (Vgs)	20V
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Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Recovery Time	98 ns
Nominal Vgs	4 V
Height	2.3876mm
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Width	6.8mm
Radiation Hardening	No
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RoHS Status	ROHS3 Compliant
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SKU: FDC610PZ-11

Manufacturer	ON Semiconductor
Pbfree Code	yes
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	36mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	PowerTrench®
Power Dissipation	1.6W
Factory Lead Time	13 Weeks
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.6W Ta
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Operating Mode	ENHANCEMENT MODE
JESD-609 Code	e3
Turn On Delay Time	7 ns
Continuous Drain Current (ID)	4.9mA
Threshold Voltage	-2.2V
Rds On (Max) @ Id, Vgs	42m Ω @ 4.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1005pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4.9A Ta
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	4ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	33 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Gate to Source Voltage (Vgs)	25V
Drain Current-Max (Abs) (ID)	4.9A
Drain-source On Resistance-Max	0.042Ohm
Drain to Source Breakdown Voltage	-30V
Max Junction Temperature (Tj)	150°C
Height	1.1mm
Length	3mm
Width	1.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
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SKU: FDI2532-11

Manufacturer	ON Semiconductor
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2002
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power Dissipation-Max	310W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	16mOhm @ 33A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5870pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8A Ta 79A Tc
Gate Charge (Qg) (Max) @ Vgs	107nC @ 10V
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
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In stock

SKU: FDS3672-11

Manufacturer	ON Semiconductor
Element Configuration	Single
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	PowerTrench®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Pbfree Code	yes
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	19MOhm
Terminal Finish	Tin (Sn)
Voltage - Rated DC	100V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	7.5A
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Mount	Surface Mount
Factory Lead Time	12 Weeks
Turn-Off Delay Time	37 ns
Continuous Drain Current (ID)	7.5A
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	23m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2015pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7.5A Ta
Gate Charge (Qg) (Max) @ Vgs	37nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	27 ns
Power Dissipation	2.5W
Operating Mode	ENHANCEMENT MODE
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Nominal Vgs	4 V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	14 ns
Lead Free	Lead Free

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SKU: FDS6681Z-11

Manufacturer	ON Semiconductor
Part Status	Active
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	PowerTrench®
JESD-609 Code	e4
Element Configuration	Single
Pbfree Code	yes
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	4.6MOhm
Voltage - Rated DC	-30V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-20A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.5W Ta
Contact Plating	Tin
Factory Lead Time	18 Weeks
Turn-Off Delay Time	660 ns
Power Dissipation	2.5W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7540pF @ 15V
Current - Continuous Drain (Id) @ 25°C	20A Ta
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	380 ns
Continuous Drain Current (ID)	-20A
Threshold Voltage	-1.8V
Operating Mode	ENHANCEMENT MODE
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	30V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	1.8 V
Height	1.75mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
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SKU: FDV304P-11

Manufacturer	ON Semiconductor
Element Configuration	Single
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Number of Terminations	3
Termination	SMD/SMT
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Resistance	1.5Ohm
Voltage - Rated DC	-25V
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-460mA
Time@Peak Reflow Temperature-Max (s)	30
Number of Elements	1
Number of Channels	1
Voltage	25V
Power Dissipation-Max	350mW Ta
Contact Plating	Tin
Factory Lead Time	10 Weeks
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	460mA
Turn On Delay Time	7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.1 Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	63pF @ 10V
Current - Continuous Drain (Id) @ 25°C	460mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 4.5V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	8 ns
Operating Mode	ENHANCEMENT MODE
Current	46A
Threshold Voltage	-860mV
Gate to Source Voltage (Vgs)	-8V
Drain to Source Breakdown Voltage	-25V
Dual Supply Voltage	-25V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-860 mV
Height	1.11mm
Length	2.92mm
Width	1.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Power Dissipation	350mW
Lead Free	Lead Free

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ON Semiconductor NDS9407

Rated 0 out of 5

In stock

SKU: NDS9407-11

Manufacturer	ON Semiconductor
Operating Mode	ENHANCEMENT MODE
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	PowerTrench®
Pbfree Code	yes
Part Status	Active
JESD-609 Code	e3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Voltage - Rated DC	-60V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-3.3A
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Contact Plating	Tin
Factory Lead Time	11 Weeks
Continuous Drain Current (ID)	-3A
Threshold Voltage	-1.6V
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	732pF @ 30V
Current - Continuous Drain (Id) @ 25°C	3A Ta
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	10 ns
Turn On Delay Time	8 ns
Power Dissipation	2.5W
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	3A
Drain to Source Breakdown Voltage	-60V
Dual Supply Voltage	60V
Nominal Vgs	-1.6 V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
FET Type	P-Channel
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