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Discrete Semiconductors

Diodes - Bridge Rectifiers (538)

Diodes - RF (19)

Transistors - FETs/MOSFETs - Single (7598)

Transistors - IGBTs - Arrays (26)

Transistors - IGBTs - Modules (2118)

Transistors - IGBTs - Single (3680)

Transistors - JFETs (1266)

Advanced BLV33

In stock

SKU: BLV33-11
Manufacturer

Advanced Semiconductor, Inc.

Maximum Operating Temperature

+ 200 C

Package / Case

DO-203AB, DO-5, Stud

Surface Mount

NO

Supplier Device Package

DO-5

Number of Terminals

4

Transistor Element Material

SILICON

Mounting Style

Through Hole

Brand

Advanced Semiconductor, Inc.

Collector- Emitter Voltage VCEO Max

33 V

DC Collector/Base Gain hfe Min

15

Emitter- Base Voltage VEBO

4 V

Ihs Manufacturer

ASI SEMICONDUCTOR INC

Manufacturer Part Number

BLV33

Transistor Polarity

NPN

Mounting Type

Stud Mount

Mfr

Microchip Technology

Minimum Operating Temperature

– 65 C

Operating Temperature-Max

200 °C

Package

Bulk

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Package Description

POST/STUD MOUNT, O-CRPM-F4

Package Shape

ROUND

Package Style

POST/STUD MOUNT

Part Life Cycle Code

Active

Pd - Power Dissipation

132 W

Product Status

Active

Risk Rank

5.09

Maximum DC Collector Current

20 A

Transition Frequency-Nom (fT)

750 MHz

Transistor Application

AMPLIFIER

Voltage - DC Reverse (Vr) (Max)

100 V

Type

RF Bipolar Power

Subcategory

Transistors

Technology

Standard

Terminal Position

RADIAL

Terminal Form

FLAT

Reach Compliance Code

unknown

JESD-30 Code

O-CRPM-F4

Qualification Status

Not Qualified

Operating Frequency

224 MHz

Configuration

Single

Voltage - Forward (Vf) (Max) @ If

975 mV @ 70 A

Operating Temperature - Junction

175°C (Max)

Packaging

Tray

ECCN Code

EAR99

Current - Average Rectified (Io)

70A

Polarity/Channel Type

NPN

Product Type

RF Bipolar Transistors

Transistor Type

Bipolar Power

Capacitance @ Vr, F

300pF @ 10V, 1MHz

Power Dissipation-Max (Abs)

132 W

Collector Current-Max (IC)

12.5 A

DC Current Gain-Min (hFE)

15

Continuous Collector Current

12.5 A

Collector-Emitter Voltage-Max

33 V

Highest Frequency Band

VERY HIGH FREQUENCY BAND

Reverse Recovery Time (trr)

50 ns

Product Category

RF Bipolar Transistors

Advanced BLX98

In stock

SKU: BLX98-11
Manufacturer

Advanced Semiconductor, Inc.

Mfr

ITT Cannon, LLC

Contact Shape

Circular

Shell Material

Aluminum Alloy

Insert Material

Polychloroprene

Mounting Style

Through Hole

Base Product Number

KPSE

Brand

Advanced Semiconductor, Inc.

Collector- Emitter Voltage VCEO Max

40 V

Connector Type

Plug Housing

Mounting Type

Free Hanging (In-Line)

Package

Bulk

Pd - Power Dissipation

5.3 W

Product Status

Active

Transistor Polarity

NPN

Operating Temperature

-55°C ~ 125°C

Packaging

Tray

Series

KPSE

Emitter- Base Voltage VEBO

4 V

Type

For Female Sockets

Shell Size - Insert

14-12

Operating Frequency

40 MHz to 860 MHz

Subcategory

Transistors

Contact Type

Crimp

Technology

Si

Orientation

N (Normal)

Shielding

Shielded

Ingress Protection

Environment Resistant

Shell Finish

Chromate over Cadmium

Number of Positions

12

Fastening Type

Bayonet Lock

Housing Color

Olive Drab

Configuration

Single

Note

Contacts Not Included

Contact Size

16 (4), 20 (8)

Product Type

RF Bipolar Transistors

Transistor Type

Bipolar Power

Continuous Collector Current

2 A

Product Category

RF Bipolar Transistors

Advanced Power Electronics AP1203AGMT-HF-3TR

In stock

SKU: AP1203AGMT-HF-3TR-11
Manufacturer

Advanced Power Electronics

Alpha & Omega Semiconductor Inc. AIM5C05B060NH

In stock

SKU: AIM5C05B060NH-9
Manufacturer

Alpha & Omega Semiconductor Inc.

Factory Lead Time

18 Weeks

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

RoHS Status

ROHS3 Compliant

Alpha & Omega Semiconductor Inc. AO3160

In stock

SKU: AO3160-11
Manufacturer

Alpha & Omega Semiconductor Inc.

Published

2011

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Current - Continuous Drain (Id) @ 25℃

40mA Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

1.39W Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Factory Lead Time

18 Weeks

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Part Status

Active

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

500 Ω @ 16mA, 10V

Vgs(th) (Max) @ Id

3.2V @ 8μA

Input Capacitance (Ciss) (Max) @ Vds

15pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

1.5nC @ 10V

Drain to Source Voltage (Vdss)

600V

Vgs (Max)

±20V

Continuous Drain Current (ID)

40mA

RoHS Status

ROHS3 Compliant

Alpha & Omega Semiconductor Inc. AO3400A

In stock

SKU: AO3400A-11
Manufacturer

Alpha & Omega Semiconductor Inc.

Pin Count

3

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

5.7A Ta

Drive Voltage (Max Rds On, Min Rds On)

2.5V 10V

Number of Elements

1

Power Dissipation (Max)

1.4W Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Turn Off Delay Time

25 ns

Published

2011

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Position

DUAL

Terminal Form

GULL WING

Mounting Type

Surface Mount

Mount

Surface Mount

Vgs (Max)

±12V

Continuous Drain Current (ID)

5.7A

Power Dissipation

1.4W

Turn On Delay Time

3 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

26.5m Ω @ 5.7A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

630pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

7nC @ 4.5V

Number of Channels

1

Configuration

SINGLE WITH BUILT-IN DIODE

Threshold Voltage

650mV

Gate to Source Voltage (Vgs)

12V

Drain-source On Resistance-Max

0.0265Ohm

Drain to Source Breakdown Voltage

30V

Max Junction Temperature (Tj)

150°C

Height

1.25mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Lead Free

Lead Free

Alpha & Omega Semiconductor Inc. AO3401

In stock

SKU: AO3401-11
Manufacturer

Alpha & Omega Semiconductor Inc.

Operating Temperature

-55°C~150°C TJ

Package / Case

TO-236-3, SC-59, SOT-23-3

Surface Mount

YES

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

4A Ta

Drive Voltage (Max Rds On, Min Rds On)

2.5V 10V

Number of Elements

1

Terminal Form

GULL WING

Mounting Type

Surface Mount

Packaging

Tape & Reel (TR)

Published

2011

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Position

DUAL

Power Dissipation (Max)

1.4W Ta

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Rds On (Max) @ Id, Vgs

50m Ω @ 4A, 10V

Vgs(th) (Max) @ Id

1.3V @ 250μA

JESD-30 Code

R-PDSO-G3

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

FET Type

P-Channel

Transistor Application

SWITCHING

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Input Capacitance (Ciss) (Max) @ Vds

645pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±12V

Drain Current-Max (Abs) (ID)

4A

Drain-source On Resistance-Max

0.05Ohm

DS Breakdown Voltage-Min

30V

RoHS Status

ROHS3 Compliant

Alpha & Omega Semiconductor Inc. AO3404

In stock

SKU: AO3404-11
Manufacturer

Alpha & Omega Semiconductor Inc.

Terminal Form

GULL WING

Surface Mount

YES

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

5A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Power Dissipation (Max)

1.4W Ta

Published

2005

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Position

DUAL

Package / Case

TO-236-3, SC-59, SOT-23-3

Mounting Type

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds

310pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

6.3nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

31m Ω @ 5A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250μA

JESD-30 Code

R-PDSO-G3

Pin Count

3

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Drain Current-Max (Abs) (ID)

5A

Drain-source On Resistance-Max

0.031Ohm

DS Breakdown Voltage-Min

30V

Feedback Cap-Max (Crss)

50 pF

Qualification Status

Not Qualified

RoHS Status

Non-RoHS Compliant

Alpha & Omega Semiconductor Inc. AO3404A

In stock

SKU: AO3404A-11
Manufacturer

Alpha & Omega Semiconductor Inc.

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Current - Continuous Drain (Id) @ 25℃

5.8A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

1.4W Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2015

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

28m Ω @ 5.8A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

820pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Continuous Drain Current (ID)

5.8A

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Alpha & Omega Semiconductor Inc. AO3406

In stock

SKU: AO3406-11
Manufacturer

Alpha & Omega Semiconductor Inc.

Power Dissipation (Max)

1.4W Ta

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

3.6A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

ECCN Code

EAR99

Mount

Surface Mount

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2011

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Number of Elements

1

Terminal Position

DUAL

Input Capacitance (Ciss) (Max) @ Vds

210pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

5nC @ 10V

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.4W

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

50m Ω @ 3.6A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250μA

Terminal Form

GULL WING

Configuration

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Continuous Drain Current (ID)

3.6A

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.065Ohm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Alpha & Omega Semiconductor Inc. AO3407

In stock

SKU: AO3407-11
Manufacturer

Alpha & Omega Semiconductor Inc.

Published

2003

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Current - Continuous Drain (Id) @ 25℃

4.1A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

1.4W Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Factory Lead Time

18 Weeks

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Part Status

Active

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

52m Ω @ 4.1A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

520pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

RoHS Status

ROHS3 Compliant

Alpha & Omega Semiconductor Inc. AO3407A

In stock

SKU: AO3407A-11
Manufacturer

Alpha & Omega Semiconductor Inc.

Terminal Position

DUAL

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

4.3A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Power Dissipation (Max)

1.4W Ta

Published

2011

JESD-609 Code

e3

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Mounting Type

Surface Mount

Mount

Surface Mount

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Drain to Source Voltage (Vdss)

30V

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.4W

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

48m Ω @ 4.3A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

830pF @ 15V

Pin Count

3

Terminal Form

GULL WING

Vgs (Max)

±20V

Continuous Drain Current (ID)

4.3A

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.048Ohm

Feedback Cap-Max (Crss)

90 pF

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Lead Free

Lead Free