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Discrete Semiconductors
STMicroelectronics A2C50S65M2-F
In stock
Manufacturer |
STMicroelectronics |
---|---|
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Current-Collector (Ic) (Max) |
50A |
Operating Temperature |
-40°C~150°C TJ |
Part Status |
Active |
Reach Compliance Code |
compliant |
Configuration |
Three Phase Inverter |
Power - Max |
208W |
Input |
Standard |
Current - Collector Cutoff (Max) |
100μA |
Voltage - Collector Emitter Breakdown (Max) |
650V |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 50A |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
4.15nF @ 25V |
STMicroelectronics A2F12M12W2-F1
In stock
Manufacturer |
STMicroelectronics |
---|---|
Package Type |
ACEPACK 2 |
Package / Case |
Module |
Supplier Device Package |
ACEPACK? 2 |
Mounting Style |
Press Fit |
Base Product Number |
A2F12M12 |
Brand |
STMicroelectronics |
Continuous Drain Current Id |
75A |
Maximum Operating Temperature |
+ 150 C |
Mfr |
STMicroelectronics |
Minimum Operating Temperature |
– 40 C |
Package |
Tray |
Mounting Type |
Chassis Mount |
Operating Temperature |
175°C (TJ) |
Product Status |
Active |
Packaging |
Tray |
Type |
Full Bridge |
Subcategory |
Discrete Semiconductor Modules |
Technology |
SiC |
Configuration |
Full Bridge |
Input |
Standard |
Product Type |
Discrete Semiconductor Modules |
Channel Type |
Four N Channel |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
7 nF @ 800 V |
Product Category |
Discrete Semiconductor Modules |
STMicroelectronics A2P75S12M3
In stock
Manufacturer |
STMicroelectronics |
---|---|
Part Status |
Active |
Configuration |
Three Phase Inverter |
JESD-30 Code |
R-XUFM-X33 |
Base Part Number |
A2P75S12 |
Terminal Form |
UNSPECIFIED |
Terminal Position |
UPPER |
Number of Terminations |
33 |
Case Connection |
ISOLATED |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Operating Temperature |
-40°C~150°C TJ |
Number of Elements |
6 |
Current-Collector (Ic) (Max) |
75A |
Transistor Element Material |
SILICON |
Surface Mount |
NO |
Package / Case |
Module |
Mounting Type |
Chassis Mount |
Transistor Application |
MOTOR CONTROL |
Turn Off Time-Nom (toff) |
517 ns |
Gate-Emitter Thr Voltage-Max |
7V |
VCEsat-Max |
2.3 V |
Input Capacitance (Cies) @ Vce |
4700pF @ 25V |
Gate-Emitter Voltage-Max |
20V |
NTC Thermistor |
Yes |
IGBT Type |
Trench Field Stop |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 75A |
Power - Max |
454.5W |
Turn On Time |
235 ns |
Power Dissipation-Max (Abs) |
454.5W |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Current - Collector Cutoff (Max) |
100μA |
Input |
Standard |
Polarity/Channel Type |
N-CHANNEL |
RoHS Status |
RoHS Compliant |
STMicroelectronics A2P75S12M3-F
In stock
Manufacturer |
STMicroelectronics |
---|---|
Configuration |
Three Phase Inverter |
Package / Case |
Module |
Current-Collector (Ic) (Max) |
75A |
Operating Temperature |
-40°C~150°C TJ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Base Part Number |
A2P75S12 |
Mounting Type |
Chassis Mount |
Input |
Standard |
Power - Max |
454.5W |
Current - Collector Cutoff (Max) |
100μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 75A |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
4700pF @ 25V |
RoHS Status |
RoHS Compliant |
STMicroelectronics BUZ10
In stock
Manufacturer |
STMicroelectronics |
---|---|
JESD-609 Code |
e0 |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
23A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
75W Tc |
Turn Off Delay Time |
48 ns |
Operating Temperature |
175°C TJ |
Packaging |
Tube |
Base Part Number |
BUZ10 |
Mount |
Through Hole |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Lead (Sn/Pb) |
Voltage - Rated DC |
50V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Current Rating |
23A |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Series |
STripFET™ |
Pin Count |
3 |
Fall Time (Typ) |
10 ns |
Continuous Drain Current (ID) |
23A |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
75W |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
70m Ω @ 14A, 10V |
Vgs(th) (Max) @ Id |
4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds |
900pF @ 25V |
Rise Time |
45ns |
Vgs (Max) |
±20V |
JESD-30 Code |
R-PSFM-T3 |
Qualification Status |
Not Qualified |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
20A |
Drain-source On Resistance-Max |
0.07Ohm |
Drain to Source Breakdown Voltage |
50V |
Pulsed Drain Current-Max (IDM) |
92A |
Avalanche Energy Rating (Eas) |
150 mJ |
Feedback Cap-Max (Crss) |
150 pF |
Turn On Time-Max (ton) |
95ns |
RoHS Status |
Non-RoHS Compliant |
Lead Free |
Contains Lead |
STMicroelectronics C65SPACE-HSSL
In stock
Manufacturer |
STMicroelectronics |
---|---|
Termination |
Crimp |
Mounting Type |
Free Hanging (In-Line) |
Shell Material |
Aluminum Alloy |
Base Product Number |
LJT06RE13 |
Mfr |
Amphenol Aerospace Operations |
Package |
Bulk |
Primary Material |
Metal |
Product Status |
Active |
Operating Temperature |
-65°C ~ 175°C |
Series |
MIL-DTL-38999 Series I, LJT |
Contact Material |
Copper Alloy |
Number of Positions |
10 |
Connector Type |
Plug, Female Sockets |
Applications |
Aviation, Marine, Military |
Fastening Type |
Bayonet Lock |
Contact Finish - Mating |
Gold |
Orientation |
N (Normal) |
Shielding |
Shielded |
Ingress Protection |
Environment Resistant |
Shell Finish |
Cadmium over Nickel |
Shell Size - Insert |
13-98 |
Features |
Coupling Nut |
Contact Finish Thickness - Mating |
50.0µin (1.27µm) |
STMicroelectronics IRF540
In stock
Manufacturer |
STMicroelectronics |
---|---|
JESD-609 Code |
e3 |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
85W Tc |
Turn Off Delay Time |
50 ns |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Base Part Number |
IRF5 |
Mount |
Through Hole |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
100V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Current Rating |
22A |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Series |
STripFET™ II |
Pin Count |
3 |
Gate Charge (Qg) (Max) @ Vgs |
41nC @ 10V |
Rise Time |
45ns |
Voltage |
100V |
Element Configuration |
Single |
Current |
33A |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
85W |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
77m Ω @ 11A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 25V |
JESD-30 Code |
R-PSFM-T3 |
Qualification Status |
Not Qualified |
Vgs (Max) |
±20V |
Fall Time (Typ) |
20 ns |
Continuous Drain Current (ID) |
22A |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.077Ohm |
Drain to Source Breakdown Voltage |
100V |
Avalanche Energy Rating (Eas) |
220 mJ |
Turn Off Time-Max (toff) |
230ns |
RoHS Status |
Non-RoHS Compliant |
Lead Free |
Contains Lead |
STMicroelectronics IRF740
In stock
Manufacturer |
STMicroelectronics |
---|---|
Part Status |
Obsolete |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
125W Tc |
Operating Temperature |
-65°C~150°C TJ |
Packaging |
Tube |
Series |
PowerMESH™ II |
Base Part Number |
IRF7 |
Mount |
Through Hole |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
HIGH VOLTAGE, FAST SWITCHING |
HTS Code |
8541.29.00.95 |
Voltage - Rated DC |
400V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Current Rating |
10A |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
JESD-609 Code |
e3 |
Pin Count |
3 |
Gate Charge (Qg) (Max) @ Vgs |
43nC @ 10V |
Rise Time |
10ns |
Voltage |
400V |
Element Configuration |
Single |
Current |
105A |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
125W |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
550m Ω @ 5.3A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1400pF @ 25V |
JESD-30 Code |
R-PSFM-T3 |
Qualification Status |
Not Qualified |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
10A |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.55Ohm |
Drain to Source Breakdown Voltage |
400V |
Avalanche Energy Rating (Eas) |
520 mJ |
Feedback Cap-Max (Crss) |
120 pF |
Turn Off Time-Max (toff) |
196ns |
Turn On Time-Max (ton) |
79ns |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead |
STMicroelectronics IRF820
In stock
Manufacturer |
STMicroelectronics |
---|---|
Part Status |
Obsolete |
Package / Case |
TO-220-3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
80W Tc |
Operating Temperature |
150°C TJ |
Packaging |
Tube |
Series |
PowerMESH™ II |
Operating Mode |
ENHANCEMENT MODE |
JESD-609 Code |
e3 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
HIGH VOLTAGE |
Voltage - Rated DC |
500V |
Current Rating |
2.5A |
Base Part Number |
IRF8 |
Pin Count |
3 |
JESD-30 Code |
R-PSIP-T3 |
Element Configuration |
Single |
Mounting Type |
Through Hole |
Mount |
Through Hole |
JEDEC-95 Code |
TO-220AB |
Turn On Delay Time |
10 ns |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
3 Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
315pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
Rise Time |
13ns |
Vgs (Max) |
±30V |
Fall Time (Typ) |
13 ns |
Continuous Drain Current (ID) |
4A |
Gate to Source Voltage (Vgs) |
30V |
Drain Current-Max (Abs) (ID) |
4A |
Power Dissipation |
80W |
Drain-source On Resistance-Max |
3Ohm |
Drain to Source Breakdown Voltage |
500V |
Pulsed Drain Current-Max (IDM) |
12A |
Avalanche Energy Rating (Eas) |
210 mJ |
Feedback Cap-Max (Crss) |
50 pF |
Turn Off Time-Max (toff) |
245ns |
Turn On Time-Max (ton) |
137ns |
Radiation Hardening |
No |
RoHS Status |
Non-RoHS Compliant |
FET Type |
N-Channel |
Lead Free |
Contains Lead |
STMicroelectronics SCT30N120D2
In stock
Manufacturer |
STMicroelectronics |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
20V |
Power Dissipation (Max) |
270W Tc |
Operating Temperature |
-55°C~200°C TJ |
Part Status |
Active |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
100m Ω @ 20A, 20V |
Vgs(th) (Max) @ Id |
3.5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds |
1700pF @ 400V |
Gate Charge (Qg) (Max) @ Vgs |
105nC @ 20V |
Drain to Source Voltage (Vdss) |
1200V |
Vgs (Max) |
+25V, -10V |
RoHS Status |
Non-RoHS Compliant |
STMicroelectronics SCTW100N65G2AG
In stock
Manufacturer |
STMicroelectronics |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
18V |
Power Dissipation (Max) |
420W Tc |
Operating Temperature |
-55°C~200°C TJ |
Series |
Automotive, AEC-Q101 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
26m Ω @ 50A, 18V |
Vgs(th) (Max) @ Id |
5V @ 5mA |
Input Capacitance (Ciss) (Max) @ Vds |
3315pF @ 520V |
Gate Charge (Qg) (Max) @ Vgs |
162nC @ 18V |
Drain to Source Voltage (Vdss) |
650V |
Vgs (Max) |
+22V, -10V |
RoHS Status |
Non-RoHS Compliant |
STMicroelectronics SCTW35N65G2V
In stock
Manufacturer |
STMicroelectronics |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current - Continuous Drain (Id) @ 25℃ |
45A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
18V 20V |
Power Dissipation (Max) |
240W Tc |
Operating Temperature |
-55°C~200°C TJ |
Series |
Automotive, AEC-Q101 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
67m Ω @ 20A, 20V |
Vgs(th) (Max) @ Id |
5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds |
1370pF @ 400V |
Gate Charge (Qg) (Max) @ Vgs |
73nC @ 20V |
Drain to Source Voltage (Vdss) |
650V |
Vgs (Max) |
+22V, -10V |
RoHS Status |
RoHS Compliant |