Showing 12469–12480 of 15245 results
STMicroelectronics STB100NF03L-03-1
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
STripFET™ III |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
115 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
35 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.2m Ω @ 50A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
6200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
88nC @ 5V |
| Base Part Number |
STB100N |
| Rise Time |
315ns |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
95 ns |
| Continuous Drain Current (ID) |
100A |
| Gate to Source Voltage (Vgs) |
16V |
| Drain-source On Resistance-Max |
0.0045Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
400A |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STB100NH02LT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
100W Tc |
| Turn Off Delay Time |
50 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Current Rating |
60A |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW THRESHOLD |
| Voltage - Rated DC |
24V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Reach Compliance Code |
not_compliant |
| Series |
STripFET™ III |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Input Capacitance (Ciss) (Max) @ Vds |
2850pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
64nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
100W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 250μA |
| Base Part Number |
STB100N |
| Pin Count |
3 |
| Rise Time |
75ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
18 ns |
| Continuous Drain Current (ID) |
60A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.006Ohm |
| Drain to Source Breakdown Voltage |
24V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Avalanche Energy Rating (Eas) |
600 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STB10LN80K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
26 Weeks |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
110W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
MDmesh™ K5 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STB10LN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
630m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
427pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 10V |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STB10NK60Z-1
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
115W Tc |
| Turn Off Delay Time |
55 ns |
| Current Rating |
10A |
| Mount |
Through Hole |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
600V |
| Operating Temperature |
-55°C~150°C TJ |
| Base Part Number |
STB10N |
| Gate Charge (Qg) (Max) @ Vgs |
70nC @ 10V |
| Rise Time |
20ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
115W |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
750m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1370pF @ 25V |
| Pin Count |
3 |
| Element Configuration |
Single |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
30 ns |
| Continuous Drain Current (ID) |
10A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.75Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STB11NM60T4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Part Status |
Not For New Designs |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
160W Tc |
| Turn Off Delay Time |
6 ns |
| Operating Temperature |
-65°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
MDmesh™ |
| Pin Count |
3 |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
450MOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Voltage - Rated DC |
600V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Current Rating |
11A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STB11N |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs (Max) |
±30V |
| Element Configuration |
Single |
| Power Dissipation |
160W |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
450m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
| Rise Time |
20ns |
| Drain to Source Voltage (Vdss) |
650V |
| Fall Time (Typ) |
11 ns |
| Continuous Drain Current (ID) |
11A |
| JESD-30 Code |
R-PSSO-G2 |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
44A |
| Height |
4.6mm |
| Length |
10.75mm |
| Width |
10.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
STMicroelectronics STB120N4LF6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Turn Off Delay Time |
125 ns |
| Operating Temperature |
-55°C~175°C TJ |
| JESD-30 Code |
R-PSSO-G2 |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
4MOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Base Part Number |
STB120N |
| Pin Count |
4 |
| Mount |
Surface Mount |
| Factory Lead Time |
20 Weeks |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
80nC @ 10V |
| Rise Time |
95ns |
| Fall Time (Typ) |
45 ns |
| Continuous Drain Current (ID) |
80A |
| Element Configuration |
Single |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Height |
4.6mm |
| Length |
10.75mm |
| Width |
10.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
110W |
| Lead Free |
Lead Free |
STMicroelectronics STB12NK80ZT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Part Status |
Active |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Turn Off Delay Time |
70 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
SuperMESH™ |
| Pin Count |
3 |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
750mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Voltage - Rated DC |
800V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Current Rating |
10.5A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STB12N |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Continuous Drain Current (ID) |
10.5A |
| Element Configuration |
Single |
| Power Dissipation |
190W |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
750m Ω @ 5.25A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2620pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
87nC @ 10V |
| Rise Time |
18ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
20 ns |
| Threshold Voltage |
3.75V |
| Gate to Source Voltage (Vgs) |
30V |
| JESD-30 Code |
R-PSSO-G2 |
| Drain to Source Breakdown Voltage |
800V |
| Pulsed Drain Current-Max (IDM) |
42A |
| Dual Supply Voltage |
800V |
| Avalanche Energy Rating (Eas) |
400 mJ |
| Nominal Vgs |
3.75 V |
| Height |
4.6mm |
| Length |
10.4mm |
| Width |
9.35mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
STMicroelectronics STB12NM60N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
90W Tc |
| Turn Off Delay Time |
60 ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mount |
Surface Mount |
| Series |
MDmesh™ II |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Operating Temperature |
-55°C~150°C TJ |
| Base Part Number |
STB12N |
| Input Capacitance (Ciss) (Max) @ Vds |
960pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
30.5nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
90W |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
410m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Pin Count |
3 |
| JESD-30 Code |
R-PSSO-G2 |
| Rise Time |
9ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
10A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
40A |
| Avalanche Energy Rating (Eas) |
200 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STB12NM60N-1
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
90W Tc |
| Turn Off Delay Time |
60 ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mount |
Through Hole |
| Series |
MDmesh™ II |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
MATTE TIN |
| Peak Reflow Temperature (Cel) |
245 |
| Reach Compliance Code |
not_compliant |
| Operating Temperature |
-55°C~150°C TJ |
| Base Part Number |
STB12N |
| Gate Charge (Qg) (Max) @ Vgs |
30.5nC @ 10V |
| Rise Time |
9ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
90W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
410m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
960pF @ 50V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
10A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain-source On Resistance-Max |
0.41Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
40A |
| Avalanche Energy Rating (Eas) |
200 mJ |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STB130N6F7
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
160W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Cut Tape (CT) |
| Series |
STripFET™ F7 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
22 Weeks |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Base Part Number |
STB130N |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |