Showing 12493–12504 of 15245 results
STMicroelectronics STB18N65M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Turn Off Delay Time |
9 ns |
| Packaging |
Tape & Reel (TR) |
| Series |
MDmesh™ V |
| Operating Temperature |
150°C TJ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
220mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Form |
GULL WING |
| Base Part Number |
STB18N |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
9 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
36 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
220m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1240pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 10V |
| Rise Time |
7ns |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
15A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Height |
4.6mm |
| Length |
10.4mm |
| Width |
9.35mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
110W |
| Lead Free |
Lead Free |
STMicroelectronics STB18NF25
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STB18N |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Turn Off Delay Time |
21 ns |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Operating Temperature |
-55°C~175°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
165MOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
29.5nC @ 10V |
| Rise Time |
17.2ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
110W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8.8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
165m Ω @ 8.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1000pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Pin Count |
4 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8.8 ns |
| Continuous Drain Current (ID) |
17A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
250V |
| Pulsed Drain Current-Max (IDM) |
68A |
| Avalanche Energy Rating (Eas) |
54 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
STMicroelectronics STB19NF20
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
90W Tc |
| Turn Off Delay Time |
19 ns |
| Base Part Number |
STB19N |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
MESH OVERLAY™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
160MOhm |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Rise Time |
22ns |
| JESD-30 Code |
R-PSSO-G2 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
90W |
| Turn On Delay Time |
11.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
160m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
24nC @ 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
11 ns |
| Pin Count |
3 |
| Continuous Drain Current (ID) |
15A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Height |
4.6mm |
| Length |
10.75mm |
| Width |
10.4mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
STMicroelectronics STB200NF04-1
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
310W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Reach Compliance Code |
not_compliant |
| Series |
STripFET™ II |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
40V |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rds On (Max) @ Id, Vgs |
3.7m Ω @ 90A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5100pF @ 25V |
| Current Rating |
120A |
| Gate Charge (Qg) (Max) @ Vgs |
210nC @ 10V |
| Rise Time |
320ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
120A |
| Drain-source On Resistance-Max |
0.0037Ohm |
| Pulsed Drain Current-Max (IDM) |
480A |
| Avalanche Energy Rating (Eas) |
1300 mJ |
| Base Part Number |
STB200N |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STB200NF04T4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
310W Tc |
| Turn Off Delay Time |
140 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Cut Tape (CT) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Series |
STripFET™ II |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
3.7MOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Voltage - Rated DC |
40V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Current Rating |
120A |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rise Time |
320ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
310W |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.7m Ω @ 90A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
210nC @ 10V |
| Pin Count |
3 |
| Base Part Number |
STB200N |
| Fall Time (Typ) |
120 ns |
| Continuous Drain Current (ID) |
120A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
480A |
| Height |
4.6mm |
| Length |
10.4mm |
| Width |
9.35mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Lead Free |
Lead Free |
STMicroelectronics STB20N65M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
130W Tc |
| JESD-30 Code |
R-PSSO-G2 |
| Operating Temperature |
150°C TJ |
| Series |
MDmesh™ V |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
190MOhm |
| Terminal Form |
GULL WING |
| Base Part Number |
STB20N |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Drain to Source Voltage (Vdss) |
650V |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1434pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
| Rise Time |
7.5ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
7.5 ns |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
18A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
710V |
| Pulsed Drain Current-Max (IDM) |
72A |
| Avalanche Energy Rating (Eas) |
270 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
STMicroelectronics STB20NM50FDT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
192W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Base Part Number |
STB20N |
| Series |
FDmesh™ |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
250mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
53nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
192W |
| Turn On Delay Time |
22 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
250m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1380pF @ 25V |
| Rise Time |
20ns |
| Vgs (Max) |
±30V |
| Pin Count |
3 |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
20A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
80A |
| Avalanche Energy Rating (Eas) |
700 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
STMicroelectronics STB20NM60D
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
192W Tc |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Factory Lead Time |
26 Weeks |
| Series |
FDmesh™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
290mOhm |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Operating Temperature |
-65°C~150°C TJ |
| Base Part Number |
STB20N |
| Gate Charge (Qg) (Max) @ Vgs |
52nC @ 10V |
| Rise Time |
12ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
192W |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
290m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 25V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSSO-G2 |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
22 ns |
| Continuous Drain Current (ID) |
20A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
80A |
| Avalanche Energy Rating (Eas) |
700 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STB21N65M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Operating Temperature |
150°C TJ |
| Series |
MDmesh™ V |
| JESD-609 Code |
e3 |
| Packaging |
Cut Tape (CT) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
150Ohm |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STB21N |
| Pin Count |
4 |
| Contact Plating |
Tin |
| Factory Lead Time |
17 Weeks |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
25V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 8.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1950pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
50nC @ 10V |
| Rise Time |
10ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
17A |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
68A |
| Avalanche Energy Rating (Eas) |
400 mJ |
| Nominal Vgs |
4 V |
| Height |
4.6mm |
| Length |
10.75mm |
| Width |
10.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
125W |
| Lead Free |
Lead Free |
STMicroelectronics STB21NK50Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Part Status |
Obsolete |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Turn Off Delay Time |
70 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Operating Mode |
ENHANCEMENT MODE |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
270mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Form |
GULL WING |
| Base Part Number |
STB21N |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Threshold Voltage |
3.75V |
| Turn On Delay Time |
28 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
270m Ω @ 8.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
119nC @ 10V |
| Rise Time |
20ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
17A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Power Dissipation |
190W |
| Pulsed Drain Current-Max (IDM) |
68A |
| Avalanche Energy Rating (Eas) |
850 mJ |
| Nominal Vgs |
3.75 V |
| Height |
4.6mm |
| Length |
10.4mm |
| Width |
9.35mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
STMicroelectronics STB21NM60N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Current Rating |
17A |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
140W Tc |
| Turn Off Delay Time |
84 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Series |
MDmesh™ |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
220mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
600V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Reach Compliance Code |
not_compliant |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
| Rise Time |
15ns |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
140W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
220m Ω @ 8.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1900pF @ 50V |
| Base Part Number |
STB21N |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
31 ns |
| Continuous Drain Current (ID) |
17A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
68A |
| Dual Supply Voltage |
600V |
| Nominal Vgs |
3 V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
4 |
| Lead Free |
Lead Free |
STMicroelectronics STB21NM60N-1
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
140W Tc |
| Turn Off Delay Time |
84 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Series |
MDmesh™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN |
| Voltage - Rated DC |
600V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
17A |
| Operating Temperature |
150°C TJ |
| Base Part Number |
STB21N |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
| Rise Time |
15ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
140W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
220m Ω @ 8.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1900pF @ 50V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
31 ns |
| Continuous Drain Current (ID) |
17A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain-source On Resistance-Max |
0.22Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
68A |
| Avalanche Energy Rating (Eas) |
610 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |