Showing 12505–12516 of 15245 results
STMicroelectronics STB21NM60ND
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
140W Tc |
| Turn Off Delay Time |
70 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Pin Count |
4 |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
170mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STB21N |
| Series |
FDmesh™ II |
| JESD-30 Code |
R-PSSO-G2 |
| Fall Time (Typ) |
48 ns |
| Continuous Drain Current (ID) |
17A |
| Power Dissipation |
140W |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
220m Ω @ 8.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1800pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Rise Time |
16ns |
| Vgs (Max) |
±25V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
68A |
| Height |
4.6mm |
| Length |
10.75mm |
| Width |
10.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STB230NH03L
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
123 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
STripFET™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3m Ω @ 40A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
4700pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
72nC @ 10V |
| Base Part Number |
STB230N |
| Rise Time |
322ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
102 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Lead Free |
Lead Free |
STMicroelectronics STB23N80K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Terminal Finish |
Matte Tin (Sn) |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
16A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
190W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Series |
MDmesh™ K5 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Reach Compliance Code |
not_compliant |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STB23N |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
280m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1000pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
33nC @ 10V |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
16A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STB24NM65N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
MDmesh™ II |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
19A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
160W Tc |
| Turn Off Delay Time |
80 ns |
| Operating Temperature |
150°C TJ |
| Pin Count |
4 |
| Mount |
Surface Mount |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
190mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Base Part Number |
STB24N |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-PSSO-G2 |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
20 ns |
| Power Dissipation |
160W |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 9.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
70nC @ 10V |
| Rise Time |
10ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
19A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
76A |
| Avalanche Energy Rating (Eas) |
500 mJ |
| Nominal Vgs |
3 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STB25N80K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
19.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
250W Tc |
| Turn Off Delay Time |
60 ns |
| Packaging |
Tape & Reel (TR) |
| Series |
SuperMESH5™ |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
260mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Form |
GULL WING |
| Base Part Number |
STB25N |
| Mount |
Surface Mount |
| Factory Lead Time |
26 Weeks |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
19.5A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
260m Ω @ 19.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1600pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Drain to Source Voltage (Vdss) |
800V |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
30V |
| Pulsed Drain Current-Max (IDM) |
78A |
| DS Breakdown Voltage-Min |
800V |
| Avalanche Energy Rating (Eas) |
200 mJ |
| Height |
4.4mm |
| Length |
10mm |
| Width |
8.95mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
250W |
| Lead Free |
Lead Free |
STMicroelectronics STB25NF06AG
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
19A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
50W Tc |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STB25N |
| FET Type |
N-Channel |
| Drain to Source Voltage (Vdss) |
60V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STB25NM60N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
160W Tc |
| Turn Off Delay Time |
94 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Current Rating |
20A |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
160mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Voltage - Rated DC |
600V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Reach Compliance Code |
not_compliant |
| Series |
MDmesh™ II |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Gate Charge (Qg) (Max) @ Vgs |
84nC @ 10V |
| Rise Time |
18ns |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
160W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
160m Ω @ 10.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 50V |
| Base Part Number |
STB25N |
| Pin Count |
4 |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
24 ns |
| Continuous Drain Current (ID) |
21A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
84A |
| Dual Supply Voltage |
600V |
| Avalanche Energy Rating (Eas) |
850 mJ |
| Nominal Vgs |
3 V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STB25NM60N-1
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
160W Tc |
| Turn Off Delay Time |
94 ns |
| Current Rating |
20A |
| Mount |
Through Hole |
| Series |
MDmesh™ II |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
600V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Operating Temperature |
150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
84nC @ 10V |
| Rise Time |
18ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
160W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
160m Ω @ 10.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 50V |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
24 ns |
| Continuous Drain Current (ID) |
21A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain-source On Resistance-Max |
0.16Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
84A |
| Avalanche Energy Rating (Eas) |
850 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STB26N60M2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Part Status |
Active |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
169W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
MDmesh™ M2 |
| Factory Lead Time |
26 Weeks |
| Base Part Number |
STB26N |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
165m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1360pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STB26NM60N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
MDmesh™ II |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Manufacturer Package Identifier |
D2PAK-0079457 |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
140W Tc |
| Turn Off Delay Time |
85 ns |
| Operating Temperature |
150°C TJ |
| Pin Count |
4 |
| Factory Lead Time |
26 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
165MOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STB26N |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-PSSO-G2 |
| Fall Time (Typ) |
50 ns |
| Continuous Drain Current (ID) |
20A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
140W |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
165m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1800pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Rise Time |
25ns |
| Vgs (Max) |
±30V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
80A |
| Max Junction Temperature (Tj) |
150°C |
| Height |
4.83mm |
| Length |
10.75mm |
| Width |
10.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STB270N4F3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
330W Tc |
| Turn Off Delay Time |
110 ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Factory Lead Time |
12 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
2MOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Operating Temperature |
-55°C~175°C TJ |
| Base Part Number |
STB270N |
| Input Capacitance (Ciss) (Max) @ Vds |
7400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
150nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
330W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
22 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.5m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Rise Time |
180ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
45 ns |
| Continuous Drain Current (ID) |
160A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
640A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STB28N60M2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
100 ns |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Base Part Number |
STB28N |
| Factory Lead Time |
26 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Series |
MDmesh™ II Plus |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Power Dissipation (Max) |
170W Tc |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
| Rise Time |
7.2ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
14.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
150m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1440pF @ 100V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
22A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
88A |
| Avalanche Energy Rating (Eas) |
350 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |