Showing 12529–12540 of 15245 results
STMicroelectronics STB40NF10LT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
STripFET™ II |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Turn Off Delay Time |
64 ns |
| Operating Temperature |
-65°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Factory Lead Time |
12 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
33mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
100V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Current Rating |
40A |
| Packaging |
Tape & Reel (TR) |
| Base Part Number |
STB40N |
| Rise Time |
82ns |
| Vgs (Max) |
±15V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
150W |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
33m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
64nC @ 4.5V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSSO-G2 |
| Fall Time (Typ) |
24 ns |
| Continuous Drain Current (ID) |
40A |
| Threshold Voltage |
1.7V |
| Gate to Source Voltage (Vgs) |
15V |
| Drain to Source Breakdown Voltage |
100V |
| Height |
4.6mm |
| Length |
10.4mm |
| Width |
9.35mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STB45N40DM2AG
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
38A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
250W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 100V |
| JESD-30 Code |
R-PSSO-G2 |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
72m Ω @ 19A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
56nC @ 10V |
| Drain to Source Voltage (Vdss) |
400V |
| Base Part Number |
STB45N |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
38A |
| Drain-source On Resistance-Max |
0.072Ohm |
| Pulsed Drain Current-Max (IDM) |
110A |
| DS Breakdown Voltage-Min |
400V |
| Avalanche Energy Rating (Eas) |
1100 mJ |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STB45NF06
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
STripFET™ II |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
38A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
80W Tc |
| Turn Off Delay Time |
28 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Reach Compliance Code |
not_compliant |
| Mount |
Surface Mount |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
28mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
60V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Packaging |
Tape & Reel (TR) |
| Current Rating |
38A |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
980pF @ 25V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
80W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
28m Ω @ 19A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STB45N |
| Gate Charge (Qg) (Max) @ Vgs |
58nC @ 10V |
| Rise Time |
40ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
38A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
152A |
| Avalanche Energy Rating (Eas) |
260 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STB45NF06T4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
38A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
80W Tc |
| Turn Off Delay Time |
28 ns |
| Operating Temperature |
175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Base Part Number |
STB45N |
| Factory Lead Time |
12 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
23mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Series |
STripFET™ II |
| Pin Count |
3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
80W |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
28m Ω @ 19A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
980pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
58nC @ 10V |
| Rise Time |
40ns |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Continuous Drain Current (ID) |
19A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Dual Supply Voltage |
60V |
| Nominal Vgs |
3 V |
| Height |
4.6mm |
| Length |
10.4mm |
| Width |
9.35mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STB46NF30
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Current - Continuous Drain (Id) @ 25℃ |
42A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
STripFET™ II |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STB46N |
| Configuration |
Single |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
75m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
90nC @ 10V |
| Drain to Source Voltage (Vdss) |
300V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
42A |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STB4N62K3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Cut Tape (CT) |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
70W Tc |
| Turn Off Delay Time |
29 ns |
| Base Part Number |
STB4N |
| Mount |
Surface Mount |
| Series |
SuperMESH3™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
1.95Ohm |
| Terminal Form |
GULL WING |
| Operating Temperature |
150°C TJ |
| Pin Count |
4 |
| Input Capacitance (Ciss) (Max) @ Vds |
450pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
70W |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.95 Ω @ 1.9A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Rise Time |
9ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
19 ns |
| Continuous Drain Current (ID) |
3.8A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
620V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STB55NF03LT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
STripFET™ |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
55A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
80W Tc |
| Turn Off Delay Time |
25 ns |
| Operating Temperature |
175°C TJ |
| Base Part Number |
STB55N |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
27nC @ 4.5V |
| JESD-30 Code |
R-PSSO-G2 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
80W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
28 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
13m Ω @ 27.5A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1265pF @ 25V |
| Rise Time |
400ns |
| Vgs (Max) |
±16V |
| Pin Count |
3 |
| Fall Time (Typ) |
50 ns |
| Continuous Drain Current (ID) |
55A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
16V |
| Drain-source On Resistance-Max |
0.02Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
220A |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STB5N62K3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
SuperMESH3™ |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
70W Tc |
| Turn Off Delay Time |
40 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
245 |
| Mount |
Surface Mount |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
1.6Ohm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
ULTRA LOW-ON RESISTANCE |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Base Part Number |
STB5N |
| Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
| Rise Time |
8ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
70W |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.6 Ω @ 2.1A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
680pF @ 50V |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
21 ns |
| Continuous Drain Current (ID) |
4.2A |
| Threshold Voltage |
3.75V |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
620V |
| Nominal Vgs |
3.75 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STB5N80K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Part Status |
Active |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
60W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
MDmesh™ |
| Factory Lead Time |
26 Weeks |
| Base Part Number |
STB5N |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.75 Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
177pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
5nC @ 10V |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STB5NK50Z-1
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STB5N |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
70W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
32 ns |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
28nC @ 10V |
| Rise Time |
10ns |
| Power Dissipation |
70W |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.5 Ω @ 2.2A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
535pF @ 25V |
| Element Configuration |
Single |
| Pin Count |
3 |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
4.4A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
17.6A |
| Radiation Hardening |
No |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STB5NK50ZT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
SuperMESH™ |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Current - Continuous Drain (Id) @ 25℃ |
4.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
70W Tc |
| Turn Off Delay Time |
32 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Turn On Delay Time |
15 ns |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
500V |
| Current Rating |
4.4A |
| Base Part Number |
STB5N |
| Element Configuration |
Single |
| Power Dissipation |
70W |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate to Source Voltage (Vgs) |
30V |
| Rds On (Max) @ Id, Vgs |
1.5Ohm @ 2.2A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
535pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
28nC @ 10V |
| Rise Time |
10ns |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
4.4A |
| Threshold Voltage |
3.75V |
| Drain to Source Breakdown Voltage |
500V |
| Input Capacitance |
535pF |
| FET Type |
N-Channel |
| Drain to Source Resistance |
1.5Ohm |
| Rds On Max |
1.5 Ω |
| Height |
4.6mm |
| Length |
10.75mm |
| Width |
10.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Lead Free |
Lead Free |
STMicroelectronics STB60N55F3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Pbfree Code |
yes |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Turn Off Delay Time |
35 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
STripFET™ III |
| Pin Count |
3 |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
8.5MOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STB60N |
| JESD-609 Code |
e3 |
| JESD-30 Code |
R-PSSO-G2 |
| Fall Time (Typ) |
11.5 ns |
| Continuous Drain Current (ID) |
80A |
| Power Dissipation |
110W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.5m Ω @ 32A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2200pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
| Rise Time |
50ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Nominal Vgs |
4 V |
| Height |
4.6mm |
| Length |
10.75mm |
| Width |
10.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |