Showing 12553–12564 of 15245 results
STMicroelectronics STB9NK60ZT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Turn Off Delay Time |
43 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Base Part Number |
STB9N |
| Factory Lead Time |
12 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
950mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Voltage - Rated DC |
600V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Current Rating |
7A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Series |
SuperMESH™ |
| Pin Count |
3 |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
7A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
125W |
| Turn On Delay Time |
19 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
950m Ω @ 3.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1110pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
53nC @ 10V |
| Rise Time |
17ns |
| Vgs (Max) |
±30V |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Threshold Voltage |
3.75V |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
7A |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
28A |
| Height |
4.6mm |
| Length |
10.4mm |
| Width |
9.35mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STD100N10LF7AG
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STD10 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Operating Temperature |
-55°C~175°C TJ |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
73nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4000pF @ 25V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JESD-30 Code |
R-PSSO-G2 |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
80A |
| Drain-source On Resistance-Max |
0.011Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
200 mJ |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STD100N3LF3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
STripFET™ II |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Turn Off Delay Time |
31 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
4.5mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| Base Part Number |
STD10 |
| Input Capacitance (Ciss) (Max) @ Vds |
2060pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
27nC @ 5V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
110W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.5m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Pin Count |
3 |
| JESD-30 Code |
R-PSSO-G2 |
| Rise Time |
205ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
35 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Avalanche Energy Rating (Eas) |
500 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STD100NH02LT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Part Status |
Obsolete |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
100W Tc |
| Turn Off Delay Time |
60 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
STripFET™ II |
| Current Rating |
60A |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
4.8mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW THRESHOLD |
| Voltage - Rated DC |
24V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
not_compliant |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
1.8V @ 250μA |
| Base Part Number |
STD10 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
100W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.8m Ω @ 30A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
3940pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
84nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Rise Time |
200ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
35 ns |
| Continuous Drain Current (ID) |
60A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
24V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Avalanche Energy Rating (Eas) |
800 mJ |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
STMicroelectronics STD100NH03LT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
100W Tc |
| Turn Off Delay Time |
48 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Base Part Number |
STD10 |
| Series |
STripFET™ III |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
30V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
60A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
77nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
100W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
16 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.5m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4100pF @ 15V |
| Rise Time |
95ns |
| Vgs (Max) |
±20V |
| Pin Count |
3 |
| Fall Time (Typ) |
23 ns |
| Continuous Drain Current (ID) |
60A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Avalanche Energy Rating (Eas) |
700 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
STMicroelectronics STD105N10F7AG
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
120W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Cut Tape (CT) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STD10 |
| Configuration |
Single |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4369pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
61nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STD10NM50N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Pbfree Code |
yes |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
70W Tc |
| Turn Off Delay Time |
7.8 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
MDmesh™ II |
| Pin Count |
3 |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
630mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STD10 |
| JESD-609 Code |
e3 |
| JESD-30 Code |
R-PSSO-G2 |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
7A |
| Power Dissipation |
70W |
| Turn On Delay Time |
7.8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
630m Ω @ 3.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
450pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Rise Time |
4.4ns |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±25V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
25V |
| Drain Current-Max (Abs) (ID) |
7A |
| Pulsed Drain Current-Max (IDM) |
28A |
| DS Breakdown Voltage-Min |
500V |
| Height |
2.4mm |
| Length |
6.6mm |
| Width |
6.2mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STD10NM60N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
70W Tc |
| Turn Off Delay Time |
32 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| JESD-30 Code |
R-PSSO-G2 |
| Series |
MDmesh™ II |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
600mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STD10 |
| Pin Count |
3 |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Continuous Drain Current (ID) |
10A |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
550m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
540pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 10V |
| Rise Time |
12ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
15 ns |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
25V |
| Element Configuration |
Single |
| Drain Current-Max (Abs) (ID) |
8A |
| Drain to Source Breakdown Voltage |
600V |
| Avalanche Energy Rating (Eas) |
200 mJ |
| Nominal Vgs |
3 V |
| Height |
2.4mm |
| Length |
6.6mm |
| Width |
6.2mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
70W |
| Lead Free |
Lead Free |
STMicroelectronics STD10P10F6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
STripFET™ F6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
40W Tc |
| Operating Temperature |
175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Packaging |
Cut Tape (CT) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
864pF @ 80V |
| JESD-30 Code |
R-PSSO-G2 |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
180m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
16.5nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Base Part Number |
STD10 |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
10A |
| Drain-source On Resistance-Max |
0.18Ohm |
| Pulsed Drain Current-Max (IDM) |
40A |
| DS Breakdown Voltage-Min |
100V |
| RoHS Status |
ROHS3 Compliant |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Lead Free |
Lead Free |
STMicroelectronics STD10PF06T4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Part Status |
Obsolete |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
4.535924g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
40W Tc |
| Turn Off Delay Time |
17 ns |
| Operating Temperature |
175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
STripFET™ II |
| JESD-30 Code |
R-PSSO-G2 |
| Mount |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
200mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
-60V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
-10A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STD10 |
| Pin Count |
3 |
| JESD-609 Code |
e3 |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
10A |
| Threshold Voltage |
-4V |
| Power Dissipation |
40W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
200m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
850pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
21nC @ 10V |
| Rise Time |
40ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
40A |
| Dual Supply Voltage |
-60V |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
-4 V |
| Height |
2.63mm |
| Length |
6.6mm |
| Width |
6.2mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STD11NM50N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
MDmesh™ II |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
70W Tc |
| Turn Off Delay Time |
33 ns |
| Operating Temperature |
150°C TJ |
| Pin Count |
3 |
| Factory Lead Time |
16 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
470mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Base Part Number |
STD11 |
| Packaging |
Cut Tape (CT) |
| JESD-30 Code |
R-PSSO-G2 |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
8.5A |
| Power Dissipation |
70W |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
470m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
547pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 10V |
| Rise Time |
10ns |
| Vgs (Max) |
±25V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
25V |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain to Source Breakdown Voltage |
500V |
| Height |
2.4mm |
| Length |
6.6mm |
| Width |
6.2mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STD11NM60N-1
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STD11 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
90W Tc |
| Turn Off Delay Time |
50 ns |
| Packaging |
Tube |
| Series |
MDmesh™ II |
| Operating Temperature |
150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
MATTE TIN |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 10V |
| Rise Time |
18.5ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
90W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
450m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
850pF @ 50V |
| Qualification Status |
Not Qualified |
| Pin Count |
3 |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
10A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain-source On Resistance-Max |
0.45Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
40A |
| Avalanche Energy Rating (Eas) |
200 mJ |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |