Showing 12589–12600 of 15245 results
STMicroelectronics STD2NK60Z-1
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
SuperMESH™ |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
45W Tc |
| Turn Off Delay Time |
22 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STD2N |
| Pin Count |
3 |
| Packaging |
Tube |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
1.4A |
| Threshold Voltage |
3.75V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8 Ω @ 700mA, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
170pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
10nC @ 10V |
| Rise Time |
30ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
25 ns |
| Power Dissipation |
45W |
| Turn On Delay Time |
8 ns |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
8Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
6A |
| Avalanche Energy Rating (Eas) |
90 mJ |
| Height |
6.2mm |
| Length |
6.6mm |
| Width |
2.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STD2NK70ZT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Current Rating |
1.6A |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
45W Tc |
| Turn Off Delay Time |
20 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
SuperMESH™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| JESD-609 Code |
e3 |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
7Ohm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
700V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
not_compliant |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rise Time |
17ns |
| Vgs (Max) |
±30V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
45W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7 Ω @ 800mA, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
280pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
11.4nC @ 10V |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Fall Time (Typ) |
35 ns |
| Continuous Drain Current (ID) |
1.6A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
700V |
| Pulsed Drain Current-Max (IDM) |
6.4A |
| Dual Supply Voltage |
700V |
| Nominal Vgs |
3.75 V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Lead Free |
Lead Free |
STMicroelectronics STD2NK90ZT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STD2N |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.1A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
70W Tc |
| Turn Off Delay Time |
43 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
6.5Ohm |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
900V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
2.1A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Fall Time (Typ) |
40 ns |
| Continuous Drain Current (ID) |
2.1A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
70W |
| Turn On Delay Time |
21 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.5 Ω @ 1.05A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
485pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
27nC @ 10V |
| Rise Time |
11ns |
| Vgs (Max) |
±30V |
| JESD-30 Code |
R-PSSO-G2 |
| Pin Count |
3 |
| Threshold Voltage |
3.75V |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
900V |
| Pulsed Drain Current-Max (IDM) |
8.4A |
| Height |
2.4mm |
| Length |
6.6mm |
| Width |
6.2mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
STMicroelectronics STD30N10F7
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STD30N |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Current - Continuous Drain (Id) @ 25℃ |
32A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
50W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
22 ns |
| Series |
DeepGATE™, STripFET™ VII |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Fall Time (Typ) |
5.6 ns |
| Continuous Drain Current (ID) |
32A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
24m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1270pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 10V |
| Rise Time |
17.5ns |
| Element Configuration |
Single |
| Number of Channels |
1 |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Height |
2.4mm |
| Length |
6.6mm |
| Width |
6.2mm |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
12 ns |
| Lead Free |
Lead Free |
STMicroelectronics STD30NF03LT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
50W Tc |
| Turn Off Delay Time |
90 ns |
| Operating Temperature |
-65°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Current Rating |
30A |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
25mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
LOW THRESHOLD |
| Voltage - Rated DC |
30V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Series |
STripFET™ II |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Input Capacitance (Ciss) (Max) @ Vds |
830pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 5V |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
50W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
35 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
25m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Base Part Number |
STD30N |
| Pin Count |
3 |
| Rise Time |
205ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
240 ns |
| Continuous Drain Current (ID) |
30A |
| Threshold Voltage |
1.7V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STD30NF04LT
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| ECCN Code |
EAR99 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Power Dissipation (Max) |
50W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
STripFET™ II |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Base Part Number |
STD30N |
| Configuration |
Single |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
30m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
720pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
30A |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STD30PF03L-1
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Power Dissipation (Max) |
70W Tc |
| Turn Off Delay Time |
36 ns |
| Operating Temperature |
175°C TJ |
| Packaging |
Tube |
| Series |
STripFET™ II |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Reach Compliance Code |
not_compliant |
| Base Part Number |
STD30 |
| Pin Count |
3 |
| Element Configuration |
Single |
| Power Dissipation |
70W |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
28m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1670pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
28nC @ 5V |
| Rise Time |
122ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
26 ns |
| Continuous Drain Current (ID) |
24A |
| Gate to Source Voltage (Vgs) |
16V |
| Drain to Source Breakdown Voltage |
-30V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STD36P4LLF6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
36A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
60W Tc |
| Operating Temperature |
175°C TJ |
| Packaging |
Cut Tape (CT) |
| Series |
STripFET™ F6 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STD36 |
| Configuration |
Single |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
20.5m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2850pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
22nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
36A |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STD37P3H6AG
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
49A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
60W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Cut Tape (CT) |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STD37 |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
15m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1630pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
30.6nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
49A |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STD3N40K3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Power Dissipation (Max) |
30W Tc |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Series |
SuperMESH3™ |
| Packaging |
Tape & Reel (TR) |
| Operating Temperature |
-55°C~150°C TJ |
| Base Part Number |
STD3N |
| Turn Off Delay Time |
18 ns |
| Number of Elements |
1 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Current - Continuous Drain (Id) @ 25℃ |
2A Tc |
| Number of Pins |
3 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Power Dissipation |
30W |
| Vgs (Max) |
±30V |
| Radiation Hardening |
No |
| Drain to Source Breakdown Voltage |
400V |
| Drain Current-Max (Abs) (ID) |
2A |
| Gate to Source Voltage (Vgs) |
30V |
| Continuous Drain Current (ID) |
2A |
| Fall Time (Typ) |
14 ns |
| Rise Time |
8ns |
| Element Configuration |
Single |
| Gate Charge (Qg) (Max) @ Vgs |
11nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
165pF @ 50V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Rds On (Max) @ Id, Vgs |
3.4 Ω @ 900mA, 10V |
| FET Type |
N-Channel |
| Turn On Delay Time |
7 ns |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STD3N80K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
20.5 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| JESD-30 Code |
R-PSSO-G2 |
| Power Dissipation (Max) |
60W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
SuperMESH5™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Base Part Number |
STD3N |
| Contact Plating |
Tin |
| Factory Lead Time |
17 Weeks |
| Rise Time |
7.5ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.5 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
130pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
9.5nC @ 10V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
2.5A |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
800V |
| Avalanche Energy Rating (Eas) |
65 mJ |
| Height |
2.4mm |
| Length |
6.6mm |
| Width |
6.2mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
110W |
| Lead Free |
Lead Free |
STMicroelectronics STD3NK60Z-1
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Element Configuration |
Single |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
45W Tc |
| Turn Off Delay Time |
19 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Packaging |
Tube |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STD3N |
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Continuous Drain Current (ID) |
2.4A |
| Threshold Voltage |
3.75V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.6 Ω @ 1.2A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
311pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
11.8nC @ 10V |
| Rise Time |
14ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
14 ns |
| Power Dissipation |
45W |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
9.6A |
| Height |
6.2mm |
| Length |
6.6mm |
| Width |
2.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
9 ns |
| Lead Free |
Lead Free |