Showing 12601–12612 of 15245 results
STMicroelectronics STD3NK80ZT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
70W Tc |
| Turn Off Delay Time |
36 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Base Part Number |
STD3N |
| Factory Lead Time |
12 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
4.5Ohm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
800V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
2.5A |
| Series |
SuperMESH™ |
| Pin Count |
3 |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
40 ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
70W |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.5 Ω @ 1.25A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
485pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 10V |
| Rise Time |
27ns |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
1.25A |
| Threshold Voltage |
3.75V |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
800V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
2.52mm |
| Length |
6.6mm |
| Width |
6.2mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STD3NM60N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
50W Tc |
| Turn Off Delay Time |
23 ns |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
MDmesh™ II |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
1.8Ohm |
| Terminal Form |
GULL WING |
| Base Part Number |
STD3N |
| JESD-30 Code |
R-PSSO-G2 |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Vgs (Max) |
±25V |
| Power Dissipation |
50W |
| Turn On Delay Time |
6 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.8 Ω @ 1.65A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
188pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
9.5nC @ 10V |
| Rise Time |
9.5ns |
| Fall Time (Typ) |
31 ns |
| Continuous Drain Current (ID) |
3.3A |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
600V |
| Avalanche Energy Rating (Eas) |
86 mJ |
| Height |
2.4mm |
| Length |
6.6mm |
| Width |
6.2mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |
STMicroelectronics STD46N6F7
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
60W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
STripFET™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STD46 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
14m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1065pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
15A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STD46P4LLF6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
46A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
70W Tc |
| Operating Temperature |
175°C TJ |
| Packaging |
Cut Tape (CT) |
| Series |
STripFET™ F6 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STD46 |
| Configuration |
Single |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
15m Ω @ 23A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3525pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
46A |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STD4N52K3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
45W Tc |
| Turn Off Delay Time |
21 ns |
| Packaging |
Cut Tape (CT) |
| Series |
SuperMESH3™ |
| Operating Temperature |
150°C TJ |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
2.6Ohm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount, Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds |
334pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
2nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
70W |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.6 Ω @ 1.25A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Pin Count |
3 |
| Base Part Number |
STD4N |
| Rise Time |
7ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
14 ns |
| Continuous Drain Current (ID) |
2.5A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
525V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSIP-T3 |
| Lead Free |
Lead Free |
STMicroelectronics STD4NK100Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Power Dissipation-Max |
90W Tc |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Number of Terminations |
2 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STD4N |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Drain to Source Voltage (Vdss) |
1000V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.8 Ω @ 1.1A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
601pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
2.2A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 10V |
| Power Dissipation |
90W |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±30V |
| Turn-Off Delay Time |
32 ns |
| Continuous Drain Current (ID) |
2.2A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
1kV |
| Pulsed Drain Current-Max (IDM) |
8.8A |
| Max Junction Temperature (Tj) |
150°C |
| Height |
2.63mm |
| Case Connection |
DRAIN |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STD4NK50ZT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Part Status |
Not For New Designs |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
45W Tc |
| Turn Off Delay Time |
21 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
SuperMESH™ |
| Pin Count |
3 |
| Mount |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
2.7Ohm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Voltage - Rated DC |
500V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
3A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STD4N |
| JESD-609 Code |
e3 |
| JESD-30 Code |
R-PSSO-G2 |
| Continuous Drain Current (ID) |
3A |
| Threshold Voltage |
3.75V |
| Power Dissipation |
45W |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.7 Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
310pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
| Rise Time |
7ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
11 ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
3A |
| Drain to Source Breakdown Voltage |
500V |
| Dual Supply Voltage |
500V |
| Nominal Vgs |
2.3 V |
| Height |
2.4mm |
| Length |
6.6mm |
| Width |
6.2mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STD4NK80Z-1
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
80W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
35 ns |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
575pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
22.5nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
80W |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.5 Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Base Part Number |
STD4N |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Rise Time |
12ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
32 ns |
| Continuous Drain Current (ID) |
3A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
3A |
| Drain to Source Breakdown Voltage |
800V |
| Radiation Hardening |
No |
| Pin Count |
3 |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STD4NS25T4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STD4N |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
50W Tc |
| Turn Off Delay Time |
12 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Series |
MESH OVERLAY™ |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
250V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
not_compliant |
| Current Rating |
4A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10.5 ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
50W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.1 Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
355pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
27nC @ 10V |
| Rise Time |
18ns |
| JESD-30 Code |
R-PSSO-G2 |
| Pin Count |
3 |
| Continuous Drain Current (ID) |
4A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
4A |
| Drain to Source Breakdown Voltage |
250V |
| Dual Supply Voltage |
250V |
| Nominal Vgs |
3 V |
| Width |
6.8mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Lead Free |
STMicroelectronics STD5N20T4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
45W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
MESH OVERLAY™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| JESD-30 Code |
R-PSSO-G2 |
| Mount |
Surface Mount |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
800mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
200V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
5A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STD5N |
| Pin Count |
3 |
| Part Status |
Obsolete |
| Element Configuration |
Single |
| Threshold Voltage |
3V |
| JEDEC-95 Code |
TO-252AA |
| Case Connection |
DRAIN |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
800m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
350pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
27nC @ 10V |
| Rise Time |
30ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
5A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
45W |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
5A |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
20A |
| Dual Supply Voltage |
200V |
| Nominal Vgs |
3 V |
| Height |
2.4mm |
| Length |
6.6mm |
| Width |
6.2mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STD5N52K3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
SuperMESH3™ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
70W Tc |
| Turn Off Delay Time |
29 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Base Part Number |
STD5N |
| Factory Lead Time |
12 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
1.5Ohm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| Pin Count |
3 |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
16 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
70W |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.5 Ω @ 2.2A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
545pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Rise Time |
11ns |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Continuous Drain Current (ID) |
4.4A |
| Threshold Voltage |
3.75V |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
525V |
| Height |
2.4mm |
| Length |
6.6mm |
| Width |
6.2mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STD5N52U
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STD5N |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
70W Tc |
| Turn Off Delay Time |
23.1 ns |
| Packaging |
Cut Tape (CT) |
| Series |
UltraFASTmesh™ |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
1.28Ohm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Rise Time |
13.6ns |
| Vgs (Max) |
±30V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
70W |
| Turn On Delay Time |
11.4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.5 Ω @ 2.2A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
529pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
16.9nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Pin Count |
3 |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
4.4A |
| Threshold Voltage |
3.75V |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
525V |
| Nominal Vgs |
3.75 V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |