Showing 12625–12636 of 15245 results
STMicroelectronics STD6NM60N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
MDmesh™ II |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
45W Tc |
| Turn Off Delay Time |
40 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Reach Compliance Code |
not_compliant |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
920mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Base Part Number |
STD6N |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
45W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
920m Ω @ 2.3A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
420pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
13nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Rise Time |
8ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
9 ns |
| Continuous Drain Current (ID) |
4.6A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
600V |
| Avalanche Energy Rating (Eas) |
65 mJ |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
STMicroelectronics STD70N02L
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
60W Tc |
| Turn Off Delay Time |
27 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Current Rating |
60A |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
8mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW THRESHOLD |
| Voltage - Rated DC |
24V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
not_compliant |
| Series |
STripFET™ III |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Input Capacitance (Ciss) (Max) @ Vds |
1400pF @ 16V |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
60W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 250μA |
| Base Part Number |
STD70N |
| Pin Count |
3 |
| Rise Time |
130ns |
| Drain to Source Voltage (Vdss) |
25V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
16 ns |
| Continuous Drain Current (ID) |
60A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
24V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Avalanche Energy Rating (Eas) |
280 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STD70N10F4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
DeepGATE™, STripFET™ |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Turn Off Delay Time |
65 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
19.5mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
5800pF @ 25V |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
125W |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
19.5m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
85nC @ 10V |
| Rise Time |
20ns |
| Base Part Number |
STD70N |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
60A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
240A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Lead Free |
Lead Free |
STMicroelectronics STD70N2LH5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
48A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
60W Tc |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Series |
STripFET™ V |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
7.1MOhm |
| Operating Temperature |
-55°C~175°C TJ |
| Base Part Number |
STD70N |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 25V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
60W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.1m Ω @ 24A, 10V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge (Qg) (Max) @ Vgs |
8nC @ 5V |
| Vgs (Max) |
±22V |
| Continuous Drain Current (ID) |
48A |
| Gate to Source Voltage (Vgs) |
22V |
| Drain to Source Breakdown Voltage |
25V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STD75N3LLH6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
60W Tc |
| Turn Off Delay Time |
37 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Pin Count |
3 |
| Mount |
Surface Mount |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Base Part Number |
STD75N |
| Series |
DeepGATE™, STripFET™ VI |
| JESD-30 Code |
R-PSSO-G2 |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Power Dissipation |
60W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
9.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.5m Ω @ 37.5A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1690pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 4.5V |
| Rise Time |
30ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
75A |
| Threshold Voltage |
1.7V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.008Ohm |
| Height |
2.4mm |
| Length |
6.6mm |
| Width |
6.2mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STD7ANM60N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
45W Tc |
| Element Configuration |
Single |
| Factory Lead Time |
16 Weeks |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Base Part Number |
STD7 |
| Number of Channels |
1 |
| Turn Off Delay Time |
26 ns |
| Turn On Delay Time |
7 ns |
| Continuous Drain Current (ID) |
5A |
| Gate to Source Voltage (Vgs) |
25V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
363pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
| Rise Time |
10ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
12 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
900m Ω @ 2.5A, 10V |
| Drain to Source Breakdown Voltage |
600V |
| Height |
4.6mm |
| Length |
10.4mm |
| Width |
9.35mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STD7LN80K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
85W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
MDmesh™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STD7 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.15 Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
270pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
5A |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STD7N52DK3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
90W Tc |
| Turn Off Delay Time |
37 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-PSSO-G2 |
| Factory Lead Time |
12 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
1.15Ohm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Base Part Number |
STD7 |
| Pin Count |
3 |
| Series |
SuperFREDmesh3™ |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
6A |
| Threshold Voltage |
3.75V |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.15 Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
33nC @ 10V |
| Rise Time |
22ns |
| Drain to Source Voltage (Vdss) |
525V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
22 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
90W |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
6A |
| Drain to Source Breakdown Voltage |
620V |
| Pulsed Drain Current-Max (IDM) |
24A |
| Avalanche Energy Rating (Eas) |
100 mJ |
| Height |
2.4mm |
| Length |
6.6mm |
| Width |
6.2mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STD7N80K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Turn Off Delay Time |
23.7 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Factory Lead Time |
17 Weeks |
| Series |
SuperMESH5™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
1.2Ohm |
| Terminal Form |
GULL WING |
| Base Part Number |
STD7 |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
110W |
| Fall Time (Typ) |
20.2 ns |
| Continuous Drain Current (ID) |
6A |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.2 Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
360pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
13.4nC @ 10V |
| Rise Time |
8.3ns |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±30V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11.3 ns |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
6A |
| Pulsed Drain Current-Max (IDM) |
24A |
| DS Breakdown Voltage-Min |
800V |
| Avalanche Energy Rating (Eas) |
88 mJ |
| Height |
2.4mm |
| Length |
6.6mm |
| Width |
6.2mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STD7NK30Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
50W Tc |
| Turn Off Delay Time |
20 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Mount |
Surface Mount |
| Series |
SuperMESH™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Base Part Number |
STD7 |
| Pin Count |
3 |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
10 ns |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
900m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
380pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
13nC @ 10V |
| Rise Time |
25ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
50W |
| Continuous Drain Current (ID) |
5A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
5A |
| Drain-source On Resistance-Max |
0.9Ohm |
| Drain to Source Breakdown Voltage |
300V |
| Pulsed Drain Current-Max (IDM) |
20A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STD85N3LH5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Pbfree Code |
yes |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
70W Tc |
| Turn Off Delay Time |
23.6 ns |
| Operating Temperature |
175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
STripFET™ V |
| Pin Count |
3 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
5mOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STD85 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs (Max) |
±22V |
| Element Configuration |
Single |
| Power Dissipation |
70W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
6 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1850pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 5V |
| Rise Time |
14ns |
| Fall Time (Typ) |
10.8 ns |
| Continuous Drain Current (ID) |
40A |
| JESD-30 Code |
R-PSSO-G2 |
| Threshold Voltage |
2.5V |
| Gate to Source Voltage (Vgs) |
22V |
| Drain Current-Max (Abs) (ID) |
80A |
| Drain to Source Breakdown Voltage |
30V |
| Height |
2.4mm |
| Length |
6.6mm |
| Width |
6.2mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
STMicroelectronics STD8NF25
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
72W Tc |
| Turn Off Delay Time |
26 ns |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
STripFET™ II |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
420MOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Position |
SINGLE |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
500pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
72W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
420m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 10V |
| Rise Time |
10ns |
| Base Part Number |
STD8N |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6 ns |
| Continuous Drain Current (ID) |
8A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
8A |
| Drain to Source Breakdown Voltage |
250V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Lead Free |
Lead Free |