Manufacturer	STMicroelectronics
Factory Lead Time	17 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Current - Continuous Drain (Id) @ 25℃	8A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	25W Tc
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	MDmesh™ DM2
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Base Part Number	STF10N
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	530m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	529pF @ 100V
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Drain to Source Voltage (Vdss)	600V
Vgs (Max)	±25V
RoHS Status	ROHS3 Compliant

Manufacturer	STMicroelectronics
Operating Temperature	-55°C~150°C TJ
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Current - Continuous Drain (Id) @ 25℃	7.5A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	25W Tc
Element Configuration	Single
Turn Off Delay Time	32.5 ns
Packaging	Tube
Series	MDmesh™ II Plus
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Base Part Number	STF10N
Number of Channels	1
Mount	Through Hole
Factory Lead Time	16 Weeks
Fall Time (Typ)	13.2 ns
Turn On Delay Time	8.8 ns
Rds On (Max) @ Id, Vgs	600m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 100V
Gate Charge (Qg) (Max) @ Vgs	13.5nC @ 10V
Rise Time	8ns
Vgs (Max)	±25V
Continuous Drain Current (ID)	7.5A
Gate to Source Voltage (Vgs)	25V
Power Dissipation	25W
Drain to Source Breakdown Voltage	600V
Height	16.4mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
FET Type	N-Channel
Lead Free	Lead Free

Manufacturer	STMicroelectronics
Packaging	Tube
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	10A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	35W Tc
Turn Off Delay Time	44 ns
Configuration	SINGLE WITH BUILT-IN DIODE
Factory Lead Time	12 Weeks
Series	SuperMESH3™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) – annealed
Terminal Position	SINGLE
Base Part Number	STF10N
Pin Count	3
Operating Temperature	-55°C~150°C TJ
Operating Mode	ENHANCEMENT MODE
Continuous Drain Current (ID)	10A
Threshold Voltage	3V
Turn On Delay Time	14.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1 Ω @ 3.6A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1180pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Rise Time	14ns
Vgs (Max)	±30V
Fall Time (Typ)	35 ns
Power Dissipation	35W
Case Connection	ISOLATED

Manufacturer	STMicroelectronics
Series	SuperMESH™
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	9A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	30W Tc
Turn Off Delay Time	43 ns
Operating Temperature	-55°C~150°C TJ
Pin Count	3
Mount	Through Hole
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	700mOhm
Terminal Finish	Matte Tin (Sn) – annealed
Voltage - Rated DC	500V
Current Rating	9A
Base Part Number	STF10N
Packaging	Tube
Element Configuration	Single
Fall Time (Typ)	15 ns
Continuous Drain Current (ID)	4.5A
Case Connection	ISOLATED
Turn On Delay Time	19 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	700m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1219pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	39.2nC @ 10V
Rise Time	17ns
Vgs (Max)	±30V
Operating Mode	ENHANCEMENT MODE

Discrete Semiconductors