Showing 12661–12672 of 15245 results
STMicroelectronics STF13NM60ND
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
9.6 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Factory Lead Time |
16 Weeks |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Series |
FDmesh™ II |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Base Part Number |
STF13 |
| Element Configuration |
Single |
| Power Dissipation (Max) |
25W Tc |
| Power Dissipation |
25W |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
15.4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
380m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
845pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
24.5nC @ 10V |
| Rise Time |
10ns |
| Drain to Source Voltage (Vdss) |
600V |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
46.5 ns |
| Continuous Drain Current (ID) |
11A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
44A |
| Height |
16.4mm |
| Length |
10.6mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STF15N95K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Power Dissipation (Max) |
30W Tc |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Weight |
329.988449mg |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
17 Weeks |
| Turn Off Delay Time |
62 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
SuperMESH5™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Drain to Source Voltage (Vdss) |
950V |
| Element Configuration |
Single |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
500m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
900pF @ 100V |
| Base Part Number |
STF15 |
| Number of Channels |
1 |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
30V |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STF15NM65N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220FP |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
30W Tc |
| Power Dissipation |
35W |
| Factory Lead Time |
16 Weeks |
| Packaging |
Tube |
| Series |
MDmesh™ II |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
380MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Base Part Number |
STF15 |
| Element Configuration |
Single |
| Turn Off Delay Time |
14 ns |
| Turn On Delay Time |
55.5 ns |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
983pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
33.3nC @ 10V |
| Rise Time |
8ns |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
26 ns |
| Continuous Drain Current (ID) |
12A |
| Threshold Voltage |
3V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
380mOhm @ 6A, 10V |
| Input Capacitance |
983pF |
| Drain to Source Resistance |
270mOhm |
| Rds On Max |
380 mΩ |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STF16N50M2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
32 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Weight |
329.988449mg |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Resistance |
240mOhm |
| Factory Lead Time |
16 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
25W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
710pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
19.5nC @ 10V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Turn On Delay Time |
9.6 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
280m Ω @ 6.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STF16 |
| Rise Time |
7.6ns |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
13A |
| Gate to Source Voltage (Vgs) |
25V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STF16N50U
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
30W Tc |
| Turn Off Delay Time |
21 ns |
| Pin Count |
3 |
| Operating Temperature |
150°C TJ |
| Series |
UltraFASTmesh™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Position |
SINGLE |
| Base Part Number |
STF16 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Drain to Source Voltage (Vdss) |
500V |
| Operating Mode |
ENHANCEMENT MODE |
| Turn On Delay Time |
16 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
520m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1950pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Rise Time |
21ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
15 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Continuous Drain Current (ID) |
15A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.52Ohm |
| Pulsed Drain Current-Max (IDM) |
60A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
250 mJ |
| Radiation Hardening |
No |
| Case Connection |
ISOLATED |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STF16N60M6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
16 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-2 Full Pack |
| Packaging |
Tube |
| Series |
UltraFASTmesh™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
STF16 |
| Drain to Source Resistance |
260mOhm |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STF19NM50N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
30W Tc |
| Turn Off Delay Time |
61 ns |
| Packaging |
Tube |
| Series |
MDmesh™ II |
| Operating Temperature |
150°C TJ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
250MOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Base Part Number |
STF19 |
| Pin Count |
3 |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Threshold Voltage |
3V |
| JEDEC-95 Code |
TO-220AB |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
250m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1000pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
| Rise Time |
16ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
17 ns |
| Continuous Drain Current (ID) |
14A |
| Case Connection |
ISOLATED |
| Power Dissipation |
30W |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
56A |
| Avalanche Energy Rating (Eas) |
208 mJ |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
12 ns |
| Lead Free |
Lead Free |
STMicroelectronics STF20N90K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
40W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ K5 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
STF20 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
250m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1500pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Drain to Source Voltage (Vdss) |
900V |
| Vgs (Max) |
±30V |
| RoHS Status |
RoHS Compliant |
STMicroelectronics STF20N95K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STF20 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
40W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
70 ns |
| Series |
SuperMESH5™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
330MOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Rise Time |
12ns |
| Vgs (Max) |
±30V |
| Power Dissipation |
40W |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
330m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1500pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Pin Count |
3 |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
17.5A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
15.5A |
| Drain to Source Breakdown Voltage |
950V |
| Pulsed Drain Current-Max (IDM) |
62A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
STMicroelectronics STF20NF06
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Package / Case |
TO-220-3 Full Pack |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
28W Tc |
| Turn Off Delay Time |
15 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Pin Count |
3 |
| Series |
STripFET™ II |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN |
| Voltage - Rated DC |
60V |
| Peak Reflow Temperature (Cel) |
245 |
| Current Rating |
20A |
| Base Part Number |
STF20 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rise Time |
15ns |
| Element Configuration |
Single |
| Power Dissipation |
60W |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
70m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| JESD-30 Code |
R-PSFM-T3 |
| Continuous Drain Current (ID) |
20A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.07Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
80A |
| Avalanche Energy Rating (Eas) |
120 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
STMicroelectronics STF20NK50Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
40W Tc |
| Turn Off Delay Time |
70 ns |
| Pin Count |
3 |
| Operating Temperature |
150°C TJ |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Base Part Number |
STF20 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rise Time |
20ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
28 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
270m Ω @ 8.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
119nC @ 10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
15 ns |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
17A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.27Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
68A |
| Avalanche Energy Rating (Eas) |
850 mJ |
| Radiation Hardening |
No |
| Power Dissipation |
40W |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STF21N65M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
30W Tc |
| Element Configuration |
Single |
| Factory Lead Time |
17 Weeks |
| Series |
MDmesh™ V |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Base Part Number |
STF21 |
| Pin Count |
3 |
| Operating Temperature |
150°C TJ |
| Operating Mode |
ENHANCEMENT MODE |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 8.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1950pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
50nC @ 10V |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
17A |
| Threshold Voltage |
4V |
| Power Dissipation |
30W |
| Case Connection |
ISOLATED |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
68A |
| Avalanche Energy Rating (Eas) |
400 mJ |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |