Showing 12673–12684 of 15245 results
STMicroelectronics STF21NM50N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
30W Tc |
| Turn Off Delay Time |
90 ns |
| Current Rating |
18A |
| Mount |
Through Hole |
| Series |
MDmesh™ II |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Resistance |
190mOhm |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
500V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Operating Temperature |
150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
1950pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
30W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Base Part Number |
STF21 |
| Pin Count |
3 |
| Rise Time |
18ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
30 ns |
| Continuous Drain Current (ID) |
18A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
72A |
| Avalanche Energy Rating (Eas) |
480 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STF21NM60N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
30W Tc |
| Turn Off Delay Time |
84 ns |
| Current Rating |
17A |
| Mount |
Through Hole |
| Series |
MDmesh™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
600V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Operating Temperature |
150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
1900pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
30W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
220m Ω @ 8.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Base Part Number |
STF21 |
| Pin Count |
3 |
| Rise Time |
15ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
31 ns |
| Continuous Drain Current (ID) |
17A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Drain-source On Resistance-Max |
0.22Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
68A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STF22NM60N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Manufacturer Package Identifier |
TO-220FP-7012510 |
| Current - Continuous Drain (Id) @ 25℃ |
16A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
30W Tc |
| Turn Off Delay Time |
74 ns |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
MDmesh™ II |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
AVALANCHE RATED |
| Base Part Number |
STF22 |
| Pin Count |
3 |
| Number of Channels |
1 |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Threshold Voltage |
3V |
| Power Dissipation |
30W |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
220m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
38 ns |
| Continuous Drain Current (ID) |
16A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Operating Mode |
ENHANCEMENT MODE |
| Drain-source On Resistance-Max |
0.22Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
64A |
| Max Junction Temperature (Tj) |
150°C |
| Height |
20mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
ISOLATED |
| Lead Free |
Lead Free |
STMicroelectronics STF23NM60ND
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
19.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
35W Tc |
| Turn Off Delay Time |
90 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature |
150°C TJ |
| Series |
FDmesh™ II |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Base Part Number |
STF23 |
| Pin Count |
3 |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Continuous Drain Current (ID) |
19.5A |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
180m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2050pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
70nC @ 10V |
| Rise Time |
45ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
40 ns |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-220AB |
| Power Dissipation |
35W |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
78A |
| Avalanche Energy Rating (Eas) |
700 mJ |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Turn On Delay Time |
21 ns |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STF24N60M2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
60 ns |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Power Dissipation (Max) |
30W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ II Plus |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Base Part Number |
STF24 |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Fall Time (Typ) |
61 ns |
| Turn On Delay Time |
14 ns |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1060pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
| Rise Time |
9ns |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
18A |
| Gate to Source Voltage (Vgs) |
25V |
| Power Dissipation |
30W |
| Drain to Source Breakdown Voltage |
600V |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
STMicroelectronics STF25NM60ND
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
40W Tc |
| Turn Off Delay Time |
50 ns |
| Power Dissipation |
40W |
| Mount |
Through Hole |
| Series |
FDmesh™ II |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Base Part Number |
STF25 |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature |
150°C TJ |
| Case Connection |
ISOLATED |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-220AB |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
160m Ω @ 10.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
80nC @ 10V |
| Rise Time |
30ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
40 ns |
| Continuous Drain Current (ID) |
21A |
| Turn On Delay Time |
60 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
84A |
| Avalanche Energy Rating (Eas) |
850 mJ |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STF26NM60ND
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
69 ns |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Weight |
329.988449mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Mount |
Through Hole |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
FDmesh™ II |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Base Part Number |
STF26 |
| Power Dissipation (Max) |
35W Tc |
| Element Configuration |
Single |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
27.5 ns |
| Turn On Delay Time |
22 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
175m Ω @ 10.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1817pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
54.6nC @ 10V |
| Rise Time |
14.5ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| Continuous Drain Current (ID) |
21A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
84A |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STF28N65M2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
59 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Base Part Number |
STF28 |
| Factory Lead Time |
16 Weeks |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ M2 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Power Dissipation (Max) |
30W Tc |
| Element Configuration |
Single |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
20A |
| Turn On Delay Time |
13.4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
180m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1440pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Drain-source On Resistance-Max |
0.18Ohm |
| Pulsed Drain Current-Max (IDM) |
80A |
| DS Breakdown Voltage-Min |
650V |
| Avalanche Energy Rating (Eas) |
760 mJ |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STF28NM60ND
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
150°C TJ |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Weight |
329.988449mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
23A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
35W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Turn Off Delay Time |
92 ns |
| Packaging |
Tube |
| Series |
FDmesh™ II |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Base Part Number |
STF28 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Fall Time (Typ) |
27 ns |
| Turn On Delay Time |
23.5 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
150m Ω @ 11.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2090pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
62.5nC @ 10V |
| Rise Time |
21.5ns |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
23A |
| JEDEC-95 Code |
TO-220AB |
| Case Connection |
ISOLATED |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
92A |
| Avalanche Energy Rating (Eas) |
50 mJ |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| FET Type |
N-Channel |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STF30NM50N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
27A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
40W Tc |
| Reach Compliance Code |
not_compliant |
| Mount |
Through Hole |
| Packaging |
Tube |
| Series |
MDmesh™ II |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Delay Time |
115 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2740pF @ 50V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
40W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
115m Ω @ 13.5A, 10V |
| Base Part Number |
STF30N |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
94nC @ 10V |
| Rise Time |
20ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
60 ns |
| Continuous Drain Current (ID) |
27A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
500V |
| Avalanche Energy Rating (Eas) |
900 mJ |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STF30NM60ND
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
40W Tc |
| Qualification Status |
Not Qualified |
| Mount |
Through Hole |
| Packaging |
Tube |
| Series |
FDmesh™ II |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Base Part Number |
STF30N |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Turn Off Delay Time |
110 ns |
| Element Configuration |
Single |
| Rise Time |
50ns |
| Vgs (Max) |
±30V |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
130m Ω @ 12.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2800pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
40W |
| Fall Time (Typ) |
75 ns |
| Continuous Drain Current (ID) |
25A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Drain-source On Resistance-Max |
0.385Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
100A |
| Avalanche Energy Rating (Eas) |
900 mJ |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STF31N65M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Power Dissipation (Max) |
30W Tc |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Resistance |
148mOhm |
| Factory Lead Time |
17 Weeks |
| Turn Off Delay Time |
46 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ V |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Number of Elements |
1 |
| Base Part Number |
STF31N |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
22A |
| Turn On Delay Time |
46 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
148m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
816pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
| Element Configuration |
Single |
| Power Dissipation |
30W |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |