Showing 12685–12696 of 15245 results
STMicroelectronics STF32N65M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
MDmesh™ V |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
35W Tc |
| Turn Off Delay Time |
53 ns |
| Operating Temperature |
150°C TJ |
| Pin Count |
3 |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
119MOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
AVALANCHE ENERGY RATED |
| Base Part Number |
STF32N |
| Packaging |
Tube |
| Element Configuration |
Single |
| Fall Time (Typ) |
16 ns |
| Continuous Drain Current (ID) |
24A |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
53 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
119m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3320pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
72nC @ 10V |
| Rise Time |
12ns |
| Vgs (Max) |
±25V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
35W |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| Pulsed Drain Current-Max (IDM) |
96A |
| Avalanche Energy Rating (Eas) |
650 mJ |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STF32NM50N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
35W Tc |
| Base Part Number |
STF32N |
| Mount |
Through Hole |
| Packaging |
Tube |
| Series |
MDmesh™ II |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Turn Off Delay Time |
110 ns |
| Element Configuration |
Single |
| Rise Time |
9.5ns |
| Vgs (Max) |
±25V |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
21.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
130m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1973pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
62.5nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
35W |
| Fall Time (Typ) |
23.6 ns |
| Continuous Drain Current (ID) |
22A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
88A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STF33N60DM6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
16 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
35W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
MDmesh™ M6 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
128m Ω @ 12.5A, 10V |
| Vgs(th) (Max) @ Id |
4.75V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1500pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STF34N65M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Resistance |
110MOhm |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
28A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
35W Tc |
| Turn Off Delay Time |
59 ns |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ V |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Continuous Drain Current (ID) |
28A |
| Gate to Source Voltage (Vgs) |
25V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
110m Ω @ 14.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2590pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
70nC @ 10V |
| Vgs (Max) |
±25V |
| Power Dissipation |
30W |
| Base Part Number |
STF34N |
| Drain to Source Breakdown Voltage |
650V |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
59 ns |
| Lead Free |
Lead Free |
STMicroelectronics STF3LN62K3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
20W Tc |
| Turn Off Delay Time |
30 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Through Hole |
| Series |
SuperMESH3™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
3Ohm |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Base Part Number |
STF3LN |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Temperature |
150°C TJ |
| Power Dissipation |
20W |
| Continuous Drain Current (ID) |
2.5A |
| Threshold Voltage |
3.75V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3 Ω @ 1.25A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
386pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Rise Time |
7ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
27 ns |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
9 ns |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
620V |
| Avalanche Energy Rating (Eas) |
90 mJ |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STF3LN80K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Current - Continuous Drain (Id) @ 25℃ |
2A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
20W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ K5 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
STF3LN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.25 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
102pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
2.63nC @ 10V |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±30V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STF3NK100Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
25W Tc |
| Turn Off Delay Time |
39 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Base Part Number |
STF3N |
| Pin Count |
3 |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Fall Time (Typ) |
32 ns |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6 Ω @ 1.25A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
601pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
18nC @ 10V |
| Rise Time |
7.5ns |
| Drain to Source Voltage (Vdss) |
1000V |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
2.5A |
| Threshold Voltage |
3.75V |
| Power Dissipation |
25W |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
6Ohm |
| Drain to Source Breakdown Voltage |
1kV |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Turn On Delay Time |
15 ns |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STF40NF06
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Current Rating |
23A |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
23A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
30W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
27 ns |
| Series |
STripFET™ II |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
28MOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Voltage - Rated DC |
60V |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Rise Time |
11ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
30W |
| Turn On Delay Time |
27 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
28m Ω @ 11.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
920pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 10V |
| Pin Count |
3 |
| Base Part Number |
STF40N |
| Fall Time (Typ) |
11 ns |
| Continuous Drain Current (ID) |
23A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
92A |
| Avalanche Energy Rating (Eas) |
250 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
STMicroelectronics STF40NF20
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Pin Count |
3 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
40W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
74 ns |
| Series |
STripFET™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
45MOhm |
| Voltage - Rated DC |
200V |
| Current Rating |
40A |
| Base Part Number |
STF40N |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Fall Time (Typ) |
22 ns |
| Continuous Drain Current (ID) |
20A |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
45m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
75nC @ 10V |
| Rise Time |
44ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Threshold Voltage |
3V |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
200V |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
40W |
| Lead Free |
Lead Free |
STMicroelectronics STF43N60DM2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
34A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
40W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ DM2 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STF43N |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
93m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
56nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
34A |
| Threshold Voltage |
4V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STF4N80K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
20W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
36 ns |
| Series |
SuperMESH5™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
2.5Ohm |
| Base Part Number |
STF4N |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Continuous Drain Current (ID) |
3A |
| JEDEC-95 Code |
TO-220AB |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.5 Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
175pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
10.5nC @ 10V |
| Rise Time |
15ns |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
21 ns |
| Turn On Delay Time |
16.5 ns |
| Case Connection |
ISOLATED |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
3A |
| DS Breakdown Voltage-Min |
800V |
| Avalanche Energy Rating (Eas) |
74.5 mJ |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
STMicroelectronics STF5N105K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
31 ns |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Weight |
329.988449mg |
| Current - Continuous Drain (Id) @ 25℃ |
3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
17 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
2.9Ohm |
| Power Dissipation (Max) |
25W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
12.5nC @ 10V |
| Rise Time |
8.5ns |
| Element Configuration |
Single |
| Turn On Delay Time |
15.5 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.5 Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
210pF @ 100V |
| Base Part Number |
STF5N |
| Number of Channels |
1 |
| Drain to Source Voltage (Vdss) |
1050V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
24 ns |
| Continuous Drain Current (ID) |
3A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
3A |
| Drain to Source Breakdown Voltage |
1.05kV |
| RoHS Status |
ROHS3 Compliant |