Showing 12697–12708 of 15245 results
STMicroelectronics STF60N55F3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
42A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
30W Tc |
| Base Part Number |
STF60N |
| Mount |
Through Hole |
| Packaging |
Tube |
| Series |
STripFET™ III |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Turn Off Delay Time |
35 ns |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
| Rise Time |
50ns |
| Power Dissipation |
30W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.5m Ω @ 32A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2200pF @ 25V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
11.5 ns |
| Continuous Drain Current (ID) |
42A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0085Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
168A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STF7N80K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Element Configuration |
Single |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Turn Off Delay Time |
23.7 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
25W Tc |
| Packaging |
Tube |
| Series |
SuperMESH5™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Base Part Number |
STF7N |
| Contact Plating |
Tin |
| Factory Lead Time |
17 Weeks |
| Continuous Drain Current (ID) |
6A |
| Gate to Source Voltage (Vgs) |
30V |
| Rds On (Max) @ Id, Vgs |
1.2 Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
360pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
13.4nC @ 10V |
| Rise Time |
8.3ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
22.2 ns |
| Turn On Delay Time |
11.3 ns |
| Power Dissipation |
25W |
| Drain Current-Max (Abs) (ID) |
6A |
| Drain to Source Breakdown Voltage |
800V |
| Height |
16.4mm |
| Length |
10.6mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
STMicroelectronics STF8N65M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Power Dissipation |
25W |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220FP |
| Current - Continuous Drain (Id) @ 25℃ |
7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Turn Off Delay Time |
20 ns |
| Operating Temperature |
150°C TJ |
| Power Dissipation (Max) |
25W Tc |
| Packaging |
Tube |
| Series |
MDmesh™ V |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
600MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Base Part Number |
STF8N |
| Element Configuration |
Single |
| Contact Plating |
Tin |
| Factory Lead Time |
17 Weeks |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
690pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 10V |
| Rise Time |
14ns |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
11 ns |
| Continuous Drain Current (ID) |
7A |
| Threshold Voltage |
4V |
| FET Type |
N-Channel |
| Turn On Delay Time |
50 ns |
| Input Capacitance |
690pF |
| Drain to Source Resistance |
560mOhm |
| Rds On Max |
600 mΩ |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
600mOhm @ 3.5A, 10V |
| Lead Free |
Lead Free |
STMicroelectronics STF8NM50N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
20W Tc |
| Turn Off Delay Time |
25 ns |
| Packaging |
Tube |
| Series |
MDmesh™ II |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
790MOhm |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Base Part Number |
STF8N |
| Pin Count |
3 |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Threshold Voltage |
3V |
| JEDEC-95 Code |
TO-220AB |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
790m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
364pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
| Rise Time |
4.4ns |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
8.8 ns |
| Continuous Drain Current (ID) |
5A |
| Case Connection |
ISOLATED |
| Power Dissipation |
20W |
| Gate to Source Voltage (Vgs) |
25V |
| Drain Current-Max (Abs) (ID) |
5A |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
20A |
| Height |
16.4mm |
| Length |
10.4mm |
| Width |
4.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
7 ns |
| Lead Free |
Lead Free |
STMicroelectronics STF8NM60N
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
25W Tc |
| Turn Off Delay Time |
40 ns |
| Base Part Number |
STF8N |
| Mount |
Through Hole |
| Series |
MDmesh™ II |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
AVALANCHE RATED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Rise Time |
12ns |
| Vgs (Max) |
±25V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
25W |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
650m Ω @ 3.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
560pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
7A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
25V |
| Drain Current-Max (Abs) (ID) |
7A |
| Drain-source On Resistance-Max |
0.65Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
28A |
| Avalanche Energy Rating (Eas) |
200 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STF9HN65M2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Current - Continuous Drain (Id) @ 25℃ |
5.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
20W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ M2 |
| Part Status |
Active |
| Factory Lead Time |
16 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| ECCN Code |
EAR99 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STF9 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
820m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
325pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
11.5nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
5.5A |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STF9NK80Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
35W Tc |
| Current Rating |
7.5A |
| Mount |
Through Hole |
| Packaging |
Tube |
| Series |
SuperMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
800V |
| Turn Off Delay Time |
58 ns |
| Base Part Number |
STF9 |
| Input Capacitance (Ciss) (Max) @ Vds |
1900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
84nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
150W |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
26 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.2 Ω @ 3.75A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Pin Count |
3 |
| Element Configuration |
Single |
| Rise Time |
19ns |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
18 ns |
| Continuous Drain Current (ID) |
7.5A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
800V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STFH13N60M2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
16 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
25W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
STFH13N |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
380m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
580pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
11A |
| Threshold Voltage |
3V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STFI13N65M2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-262-3 Full Pack, I2Pak |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
25W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Series |
MDmesh™ M2 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
150°C TJ |
| Base Part Number |
STFI13N |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
430m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
590pF @ 100V |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
10A |
| JEDEC-95 Code |
TO-281 |
| Drain-source On Resistance-Max |
0.43Ohm |
| Pulsed Drain Current-Max (IDM) |
40A |
| DS Breakdown Voltage-Min |
650V |
| Avalanche Energy Rating (Eas) |
350 mJ |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STFI13NK60Z
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-262-3 Full Pack, I2Pak |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
35W Tc |
| Pin Count |
3 |
| Mount |
Through Hole |
| Packaging |
Tube |
| Series |
SuperMESH™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Base Part Number |
STFI13N |
| Turn Off Delay Time |
61 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Rise Time |
14ns |
| Vgs (Max) |
±30V |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
22 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
550m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2030pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
92nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
35W |
| Fall Time (Typ) |
21 ns |
| Continuous Drain Current (ID) |
13A |
| Gate to Source Voltage (Vgs) |
30V |
| Drain-source On Resistance-Max |
0.55Ohm |
| Drain to Source Breakdown Voltage |
600V |
| Pulsed Drain Current-Max (IDM) |
52A |
| Avalanche Energy Rating (Eas) |
400 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STFI15N60M2-EP
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-262-3 Full Pack, I2Pak |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Base Part Number |
STFI15N |
| Mount |
Through Hole |
| Packaging |
Tube |
| Series |
MDmesh™ M2 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Power Dissipation (Max) |
25W Tc |
| JESD-30 Code |
R-PSIP-T3 |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
378m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
590pF @ 100V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
11A |
| JEDEC-95 Code |
TO-281 |
| Drain-source On Resistance-Max |
0.378Ohm |
| Pulsed Drain Current-Max (IDM) |
44A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
125 mJ |
| RoHS Status |
ROHS3 Compliant |