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Discrete Semiconductors
STMicroelectronics STFI20N65M5
In stock
Manufacturer |
STMicroelectronics |
---|---|
Operating Temperature |
150°C TJ |
Mounting Type |
Through Hole |
Package / Case |
TO-262-3 Full Pack, I2Pak |
Number of Pins |
3 |
Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
130W Tc |
Element Configuration |
Single |
Mount |
Through Hole |
Packaging |
Tube |
Series |
MDmesh™ V |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
Not Applicable |
ECCN Code |
EAR99 |
Base Part Number |
STFI20N |
Turn Off Delay Time |
11.5 ns |
Turn On Delay Time |
43 ns |
Continuous Drain Current (ID) |
18A |
Gate to Source Voltage (Vgs) |
25V |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1345pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
Rise Time |
7.5ns |
Vgs (Max) |
±25V |
Fall Time (Typ) |
7.5 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
190m Ω @ 9A, 10V |
Drain to Source Breakdown Voltage |
650V |
Height |
10.85mm |
Length |
10.4mm |
Width |
4.6mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STFI20NK50Z
In stock
Manufacturer |
STMicroelectronics |
---|---|
Operating Temperature |
150°C TJ |
Mounting Type |
Through Hole |
Package / Case |
TO-262-3 Full Pack, I2Pak |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
40W Tc |
Pin Count |
3 |
Mount |
Through Hole |
Packaging |
Tube |
Series |
SuperMESH™ |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Position |
SINGLE |
Base Part Number |
STFI20N |
Turn Off Delay Time |
70 ns |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Rise Time |
20ns |
Vgs (Max) |
±30V |
Case Connection |
ISOLATED |
Turn On Delay Time |
28 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
270m Ω @ 8.5A, 10V |
Vgs(th) (Max) @ Id |
4.5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
119nC @ 10V |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
40W |
Fall Time (Typ) |
15 ns |
Continuous Drain Current (ID) |
17A |
Gate to Source Voltage (Vgs) |
30V |
Drain-source On Resistance-Max |
0.27Ohm |
Drain to Source Breakdown Voltage |
500V |
Pulsed Drain Current-Max (IDM) |
68A |
Avalanche Energy Rating (Eas) |
850 mJ |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STFI26N60M2
In stock
Manufacturer |
STMicroelectronics |
---|---|
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-262-3 Full Pack, I2Pak |
Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
30W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
MDmesh™ |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STFI26N |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
165m Ω @ 11A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Drain to Source Voltage (Vdss) |
600V |
Vgs (Max) |
±25V |
Continuous Drain Current (ID) |
20A |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STFI28N60M2
In stock
Manufacturer |
STMicroelectronics |
---|---|
Turn Off Delay Time |
100 ns |
Resistance |
135mOhm |
ECCN Code |
EAR99 |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Part Status |
Obsolete |
Series |
MDmesh™ II Plus |
Packaging |
Tube |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Operating Temperature |
150°C TJ |
Power Dissipation (Max) |
30W Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
Weight |
2.084002g |
Package / Case |
TO-262-3 Full Pack, I2Pak |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Base Part Number |
STFI28N |
Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
Drain to Source Breakdown Voltage |
600V |
Gate to Source Voltage (Vgs) |
25V |
Continuous Drain Current (ID) |
22A |
Fall Time (Typ) |
8 ns |
Vgs (Max) |
±25V |
Rise Time |
7.2ns |
Input Capacitance (Ciss) (Max) @ Vds |
1440pF @ 100V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Rds On (Max) @ Id, Vgs |
150m Ω @ 11A, 10V |
FET Type |
N-Channel |
Turn On Delay Time |
14.5 ns |
Element Configuration |
Single |
Number of Channels |
1 |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STFI34NM60N
In stock
Manufacturer |
STMicroelectronics |
---|---|
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-262-3 Full Pack, I2Pak |
Number of Pins |
3 |
Current - Continuous Drain (Id) @ 25℃ |
29A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
40W Tc |
Turn Off Delay Time |
106 ns |
Operating Temperature |
150°C TJ |
Packaging |
Tube |
Series |
MDmesh™ II |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
Not Applicable |
ECCN Code |
EAR99 |
Base Part Number |
STFI34N |
Power Dissipation |
40W |
Turn On Delay Time |
17 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
105m Ω @ 14.5A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2722pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
84nC @ 10V |
Rise Time |
34ns |
Vgs (Max) |
±25V |
Fall Time (Typ) |
70 ns |
Continuous Drain Current (ID) |
29A |
Gate to Source Voltage (Vgs) |
25V |
Drain to Source Breakdown Voltage |
600V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STFI6N62K3
In stock
Manufacturer |
STMicroelectronics |
---|---|
Base Part Number |
STFI6N |
Mounting Type |
Through Hole |
Package / Case |
TO-262-3 Full Pack, I2Pak |
Number of Pins |
3 |
Current - Continuous Drain (Id) @ 25℃ |
5.5A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
30W Tc |
Turn Off Delay Time |
49 ns |
Operating Temperature |
150°C TJ |
Packaging |
Tube |
Series |
SuperMESH3™ |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Mount |
Through Hole |
Power Dissipation |
30W |
Element Configuration |
Single |
Turn On Delay Time |
22 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
1.2 Ω @ 2.8A, 10V |
Vgs(th) (Max) @ Id |
4.5V @ 50μA |
Input Capacitance (Ciss) (Max) @ Vds |
875pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
Rise Time |
12ns |
Vgs (Max) |
±30V |
Fall Time (Typ) |
20 ns |
Continuous Drain Current (ID) |
5.5A |
Gate to Source Voltage (Vgs) |
30V |
Drain to Source Breakdown Voltage |
620V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STFU10N80K5
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
27 Weeks |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 Full Pack |
Current - Continuous Drain (Id) @ 25℃ |
9A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
30W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Series |
MDmesh™ K5 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Base Part Number |
STFU1 |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
600m Ω @ 4.5A, 10V |
Vgs(th) (Max) @ Id |
5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds |
635pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
Drain to Source Voltage (Vdss) |
800V |
Vgs (Max) |
±30V |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STFU13N65M2
In stock
Manufacturer |
STMicroelectronics |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 Full Pack |
Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
25W Tc |
Operating Temperature |
150°C TJ |
Packaging |
Tube |
Series |
MDmesh™ M2 |
Part Status |
Active |
Factory Lead Time |
16 Weeks |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
ECCN Code |
EAR99 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STFU1 |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
430m Ω @ 5A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
590pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
Drain to Source Voltage (Vdss) |
650V |
Vgs (Max) |
±25V |
Continuous Drain Current (ID) |
10A |
RoHS Status |
Non-RoHS Compliant |
STMicroelectronics STFU15NM65N
In stock
Manufacturer |
STMicroelectronics |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 Full Pack |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
30W Tc |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
16 Weeks |
Series |
MDmesh™ II |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Terminal Position |
SINGLE |
Operating Temperature |
-55°C~150°C TJ |
Reach Compliance Code |
not_compliant |
Input Capacitance (Ciss) (Max) @ Vds |
983pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs |
33.3nC @ 10V |
JESD-30 Code |
R-PSFM-T3 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
ISOLATED |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
380m Ω @ 6A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STFU1 |
Drain to Source Voltage (Vdss) |
650V |
Vgs (Max) |
±25V |
Continuous Drain Current (ID) |
12A |
JEDEC-95 Code |
TO-220AB |
Drain-source On Resistance-Max |
0.38Ohm |
Pulsed Drain Current-Max (IDM) |
48A |
DS Breakdown Voltage-Min |
650V |
Avalanche Energy Rating (Eas) |
187 mJ |
RoHS Status |
Non-RoHS Compliant |
STMicroelectronics STFU23N80K5
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
27 Weeks |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 Full Pack |
Current - Continuous Drain (Id) @ 25℃ |
16A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
35W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Series |
MDmesh™ K5 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Reach Compliance Code |
compliant |
Base Part Number |
STFU2 |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
280m Ω @ 8A, 10V |
Vgs(th) (Max) @ Id |
5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds |
1000pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
33nC @ 10V |
Drain to Source Voltage (Vdss) |
800V |
Vgs (Max) |
±30V |
STMicroelectronics STFU28N65M2
In stock
Manufacturer |
STMicroelectronics |
---|---|
ECCN Code |
EAR99 |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 Full Pack |
Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Power Dissipation (Max) |
30W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Series |
MDmesh™ M2 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Factory Lead Time |
16 Weeks |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Base Part Number |
STFU2 |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
180m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1440pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
Drain to Source Voltage (Vdss) |
650V |
Vgs (Max) |
±25V |
Continuous Drain Current (ID) |
20A |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STFV4N150
In stock
Manufacturer |
STMicroelectronics |
---|---|
Pin Count |
3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
40W Tc |
Turn Off Delay Time |
45 ns |
Packaging |
Tube |
Series |
PowerMESH™ |
Operating Temperature |
150°C TJ |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
1.5kV |
Reach Compliance Code |
unknown |
Current Rating |
4A |
Base Part Number |
STFV4 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Drain to Source Voltage (Vdss) |
1500V |
Vgs (Max) |
±30V |
Power Dissipation |
40W |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
7 Ω @ 2A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
50nC @ 10V |
Rise Time |
30ns |
Element Configuration |
Single |
Qualification Status |
Not Qualified |
Fall Time (Typ) |
45 ns |
Continuous Drain Current (ID) |
4A |
JEDEC-95 Code |
TO-220AB |
Gate to Source Voltage (Vgs) |
30V |
Drain Current-Max (Abs) (ID) |
4A |
Drain-source On Resistance-Max |
7Ohm |
Drain to Source Breakdown Voltage |
1.5kV |
RoHS Status |
ROHS3 Compliant |
Operating Mode |
ENHANCEMENT MODE |
Lead Free |
Lead Free |