Showing 12721–12732 of 15245 results
STMicroelectronics STFW12N120K5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
ISOWATT218FX |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tube |
| Series |
MDmesh™ K5 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Power Dissipation (Max) |
63W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1370pF @ 100V |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
690m Ω @ 6A, 10V |
| Base Part Number |
STFW |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
44.2nC @ 10V |
| Drain to Source Voltage (Vdss) |
1200V |
| Vgs (Max) |
±30V |
| Drain Current-Max (Abs) (ID) |
12A |
| Drain-source On Resistance-Max |
0.69Ohm |
| Pulsed Drain Current-Max (IDM) |
48A |
| DS Breakdown Voltage-Min |
1200V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STFW20N65M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Part Status |
Active |
| Mounting Type |
Through Hole |
| Package / Case |
ISOWATT218FX |
| Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
48W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ M5 |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
STFW |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1434pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±25V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STFW24N60M2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
60 ns |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3PF |
| Number of Pins |
3 |
| Weight |
6.961991g |
| Current - Continuous Drain (Id) @ 25℃ |
18A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Power Dissipation (Max) |
48W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ II Plus |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Rise Time |
9ns |
| Number of Channels |
1 |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1060pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
15 ns |
| Base Part Number |
STFW |
| Continuous Drain Current (ID) |
18A |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
600V |
| Height |
26.7mm |
| Length |
15.7mm |
| Width |
5.7mm |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STFW40N60M2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Power Dissipation (Max) |
63W Tc |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Series |
MDmesh™ II Plus |
| Packaging |
Tube |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Delay Time |
96 ns |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Current - Continuous Drain (Id) @ 25℃ |
34A Tc |
| Number of Pins |
3 |
| Package / Case |
ISOWATT218FX |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Base Part Number |
STFW |
| Drain to Source Voltage (Vdss) |
600V |
| Width |
5.7mm |
| Length |
15.7mm |
| Height |
26.7mm |
| Gate to Source Voltage (Vgs) |
25V |
| Continuous Drain Current (ID) |
34A |
| Vgs (Max) |
±25V |
| Gate Charge (Qg) (Max) @ Vgs |
57nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 100V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Rds On (Max) @ Id, Vgs |
88m Ω @ 17A, 10V |
| FET Type |
N-Channel |
| Turn On Delay Time |
20.5 ns |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STFW45N65M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
ISOWATT218FX |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
12 Weeks |
| Packaging |
Tube |
| Series |
MDmesh™ V |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Power Dissipation (Max) |
57W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
3470pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
82nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
78m Ω @ 17.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Base Part Number |
STFW |
| JESD-30 Code |
R-PSFM-T3 |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
35A |
| Drain-source On Resistance-Max |
0.078Ohm |
| Pulsed Drain Current-Max (IDM) |
140A |
| DS Breakdown Voltage-Min |
650V |
| Avalanche Energy Rating (Eas) |
810 mJ |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STFW4N150
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
ISOWATT218FX |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
63W Tc |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
45 ns |
| Series |
PowerMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
7Ohm |
| Terminal Position |
SINGLE |
| Base Part Number |
STFW |
| Pin Count |
3 |
| Contact Plating |
Tin |
| Factory Lead Time |
8 Weeks |
| Fall Time (Typ) |
45 ns |
| Continuous Drain Current (ID) |
4A |
| Turn On Delay Time |
35 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7 Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
50nC @ 10V |
| Rise Time |
30ns |
| Drain to Source Voltage (Vdss) |
1500V |
| Vgs (Max) |
±30V |
| Power Dissipation |
63W |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
30V |
| Drain Current-Max (Abs) (ID) |
4A |
| Drain to Source Breakdown Voltage |
1.5kV |
| Height |
26.7mm |
| Length |
15.7mm |
| Width |
5.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
ISOLATED |
| Lead Free |
Lead Free |
STMicroelectronics STFW69N65M5
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Power Dissipation (Max) |
79W Tc |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
ISOWATT218FX |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
58A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Resistance |
45mOhm |
| Factory Lead Time |
12 Weeks |
| Turn Off Delay Time |
102 ns |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Series |
MDmesh™ V |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Number of Elements |
1 |
| Base Part Number |
STFW |
| Vgs (Max) |
±25V |
| Continuous Drain Current (ID) |
58A |
| Turn On Delay Time |
102 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
45m Ω @ 29A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6420pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
143nC @ 10V |
| Element Configuration |
Single |
| Power Dissipation |
70W |
| Gate to Source Voltage (Vgs) |
25V |
| Drain to Source Breakdown Voltage |
650V |
| Height |
26.7mm |
| Length |
15.7mm |
| Width |
5.7mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STG40M120F3D7
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
DO-214AC, SMA |
| Supplier Device Package |
DO-214AC (SMA) |
| Packaging |
Tape & Reel (TR) |
| Series |
— |
| Part Status |
Active |
| Base Part Number |
BYG24G |
| Speed |
Fast Recovery = 200mA (Io) |
| Diode Type |
Avalanche |
| Current - Reverse Leakage @ Vr |
1µA @ 400V |
| Voltage - Forward (Vf) (Max) @ If |
1.25V @ 1.5A |
| Operating Temperature - Junction |
-55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) |
400V |
| Current - Average Rectified (Io) |
1.5A |
| Capacitance @ Vr, F |
— |
| Reverse Recovery Time (trr) |
140ns |
STMicroelectronics STGB10M65DF2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
30 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
400V, 10A, 22 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Cut Tape (CT) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
115W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STGB10 |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
115W |
| Collector Emitter Voltage (VCEO) |
2V |
| Max Collector Current |
20A |
| Reverse Recovery Time |
96 ns |
| Max Breakdown Voltage |
650V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 10A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
28nC |
| Current - Collector Pulsed (Icm) |
40A |
| Td (on/off) @ 25°C |
19ns/91ns |
| Switching Energy |
120μJ (on), 270μJ (off) |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGB10NB37LZ
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Pbfree Code |
yes |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
440V |
| Number of Elements |
1 |
| Test Conditions |
328V, 10A, 1k Ω, 5V |
| Operating Temperature |
-65°C~175°C TJ |
| Packaging |
Tube |
| Series |
PowerMESH™ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
VOLTAGE CLAMPING |
| Max Power Dissipation |
125W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| JESD-609 Code |
e3 |
| Base Part Number |
STGB10 |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 4.5V, 10A |
| Turn Off Time-Nom (toff) |
17800 ns |
| Element Configuration |
Single |
| Power Dissipation |
125W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
AUTOMOTIVE IGNITION |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.8V |
| Max Collector Current |
20A |
| Turn On Time |
860 ns |
| Pin Count |
3 |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge |
28nC |
| Current - Collector Pulsed (Icm) |
40A |
| Td (on/off) @ 25°C |
1.3μs/8μs |
| Switching Energy |
2.4mJ (on), 5mJ (off) |
| Gate-Emitter Thr Voltage-Max |
2.4V |
| Height |
4.6mm |
| Length |
10.4mm |
| Width |
9.35mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGB10NB40LZT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Pin Count |
3 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
2.240009g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
440V |
| Number of Elements |
1 |
| Test Conditions |
328V, 10A, 1k Ω, 5V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| JESD-609 Code |
e3 |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Voltage - Rated DC |
18V |
| Max Power Dissipation |
150W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Current Rating |
20A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STGB10 |
| Mount |
Surface Mount |
| Factory Lead Time |
8 Weeks |
| Continuous Collector Current |
20A |
| Turn Off Time-Nom (toff) |
12000 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
AUTOMOTIVE IGNITION |
| Rise Time |
270ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.8V |
| Max Collector Current |
20A |
| Max Breakdown Voltage |
440V |
| Turn On Time |
1570 ns |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 4.5V, 10A |
| Element Configuration |
Single |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge |
28nC |
| Current - Collector Pulsed (Icm) |
40A |
| Td (on/off) @ 25°C |
1.3μs/8μs |
| Switching Energy |
2.4mJ (on), 5mJ (off) |
| Gate-Emitter Thr Voltage-Max |
2.2V |
| Height |
4.6mm |
| Length |
10.4mm |
| Width |
9.35mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
150W |
| Lead Free |
Lead Free |