Showing 12745–12756 of 15245 results

Discrete Semiconductors

STMicroelectronics STGB20H60DF

In stock

SKU: STGB20H60DF-9
Manufacturer

STMicroelectronics

Part Status

Active

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 20A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Element Configuration

Single

Factory Lead Time

20 Weeks

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

167W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STGB20

Packaging

Cut Tape (CT)

Input Type

Standard

Gate Charge

115nC

Current - Collector Pulsed (Icm)

80A

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

Reverse Recovery Time

90 ns

Max Breakdown Voltage

600V

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 20A

IGBT Type

Trench Field Stop

Power - Max

167W

Polarity/Channel Type

N-CHANNEL

Td (on/off) @ 25°C

42.5ns/177ns

Switching Energy

209μJ (on), 261μJ (off)

Gate-Emitter Voltage-Max

20V

Height

4.6mm

Length

10.4mm

Width

9.35mm

RoHS Status

ROHS3 Compliant

STMicroelectronics STGB20H65DFB2

In stock

SKU: STGB20H65DFB2-9
Manufacturer

STMicroelectronics

Factory Lead Time

Surface Mount

Surface Mount

D2PAK-3

Base Product Number

STMicroelectronics

Gate to Emitter Voltage (Max)

STMicroelectronics

Maximum Operating Temperature

STMicroelectronics

Minimum Operating Temperature

MSL 1 – Unlimited

Operating Temperature Classification

Digi-Reel?

Package Type

Active

Rad Hardened

Details

Tradename

-55°C ~ 175°C (TJ)

Operating Temperature

MouseReel

Packaging

HB2

ECCN Code

IGBTs

Configuration

147

Case Connection

Standard

Input Type

147 W

Polarity/Channel Type

IGBT Transistors

JEDEC-95 Code

650 V

Voltage - Collector Emitter Breakdown (Max)

40 A

Current - Collector (Ic) (Max)

1.65

Channel Type

400V, 20A, 10Ohm, 15V

Test Condition

2.1V @ 15V, 20A

Collector Current-Max (IC)

40

Continuous Collector Current

Trench Field Stop

Collector-Emitter Voltage-Max

56 nC

Gate Charge

60 A

Current - Collector Pulsed (Icm)

16ns/78.8ns

Td (on/off) @ 25°C

265μJ (on), 214μJ (off)

Switching Energy

215 ns

Reverse Recovery Time (trr)

IGBT Transistors

STMicroelectronics STGB20H65FB2

In stock

SKU: STGB20H65FB2-9
Manufacturer

STMicroelectronics

Input Type

Standard

Supplier Device Package

D2PAK (TO-263)

Base Product Number

STGB20

Brand

STMicroelectronics

Mfr

STMicroelectronics

Package

Tape & Reel (TR)

Product Status

Active

Operating Temperature

-55°C ~ 175°C (TJ)

Packaging

Reel

Series

HB2

Subcategory

IGBTs

Power Dissipation

147

Mounting Type

Surface Mount

Product Type

IGBT Transistors

Power - Max

147 W

Voltage - Collector Emitter Breakdown (Max)

650 V

Current - Collector (Ic) (Max)

40 A

Collector Emitter Saturation Voltage

1.65

Test Condition

400V, 20A, 10Ohm, 15V

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 20A

Continuous Collector Current

40

IGBT Type

Trench Field Stop

Gate Charge

56 nC

Current - Collector Pulsed (Icm)

60 A

Td (on/off) @ 25°C

16ns/78.8ns

Switching Energy

265μJ (on), 214μJ (off)

Product Category

IGBT Transistors

STMicroelectronics STGB20M65DF2

In stock

SKU: STGB20M65DF2-9
Manufacturer

STMicroelectronics

Factory Lead Time

30 Weeks

Mounting Type

Surface Mount

Current-Collector (Ic) (Max)

40A

Test Conditions

400V, 20A, 12 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Series

M

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STGB20

Input Type

Standard

Power - Max

166W

Reverse Recovery Time

166ns

Voltage - Collector Emitter Breakdown (Max)

650V

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 20A

IGBT Type

Trench Field Stop

Gate Charge

63nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

26ns/108ns

Switching Energy

140μJ (on), 560μJ (off)

RoHS Status

ROHS3 Compliant

STMicroelectronics STGB20N40LZ

In stock

SKU: STGB20N40LZ-9
Manufacturer

STMicroelectronics

Element Configuration

Single

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Collector-Emitter Breakdown Voltage

390V

Test Conditions

300V, 10A, 1k Ω, 5V

Turn Off Delay Time

4.3 μs

Operating Temperature

-55°C~175°C TJ

Packaging

Cut Tape (CT)

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

150W

Base Part Number

STGB20

Factory Lead Time

8 Weeks

Input Type

Logic

Power Dissipation

150W

Turn On Delay Time

700 ns

Collector Emitter Voltage (VCEO)

425V

Max Collector Current

25A

Max Breakdown Voltage

390V

Vce(on) (Max) @ Vge, Ic

1.6V @ 4V, 6A

Gate Charge

24nC

Current - Collector Pulsed (Icm)

40A

Td (on/off) @ 25°C

700ns/4.3μs

Height

4.6mm

Length

10.4mm

Width

9.35mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

STMicroelectronics STGB20N45LZAG

In stock

SKU: STGB20N45LZAG-9
Manufacturer

STMicroelectronics

Factory Lead Time

8 Weeks

Mounting Type

Surface Mount

Current-Collector (Ic) (Max)

25A

Test Conditions

300V, 10A, 1k Ω, 5V

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Series

Automotive, AEC-Q101

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Base Part Number

STGB20

Input Type

Logic

Power - Max

150W

Voltage - Collector Emitter Breakdown (Max)

450V

Vce(on) (Max) @ Vge, Ic

1.25V @ 4V, 6A

Gate Charge

26nC

Current - Collector Pulsed (Icm)

50A

Td (on/off) @ 25°C

1.1μs/4.6μs

RoHS Status

ROHS3 Compliant

STMicroelectronics STGB20NB32LZ

In stock

SKU: STGB20NB32LZ-9
Manufacturer

STMicroelectronics

JESD-609 Code

e3

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

375V

Number of Elements

1

Test Conditions

250V, 20A, 1k Ω, 4.5V

Operating Temperature

175°C TJ

Packaging

Tube

Current Rating

20A

Mount

Surface Mount

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Voltage - Rated DC

2V

Max Power Dissipation

150W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

245

Series

PowerMESH™

Time@Peak Reflow Temperature-Max (s)

30

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

40A

JESD-30 Code

R-PSSO-G2

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

150W

Transistor Application

AUTOMOTIVE IGNITION

Rise Time

600ns

Polarity/Channel Type

N-CHANNEL

Base Part Number

STGB20

Pin Count

3

Turn On Time

2900 ns

Vce(on) (Max) @ Vge, Ic

2V @ 4.5V, 20A

Turn Off Time-Nom (toff)

15900 ns

Gate Charge

51nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

2.3μs/11.5μs

Switching Energy

11.8mJ (off)

Gate-Emitter Thr Voltage-Max

2V

Radiation Hardening

No

RoHS Status

Non-RoHS Compliant

STMicroelectronics STGB20NB37LZ

In stock

SKU: STGB20NB37LZ-9
Manufacturer

STMicroelectronics

Peak Reflow Temperature (Cel)

245

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

425V

Number of Elements

1

Test Conditions

250V, 20A, 1k Ω, 4.5V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Series

PowerMESH™

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Additional Feature

ESD PROTECTED

Max Power Dissipation

200W

Terminal Form

GULL WING

Mounting Type

Surface Mount

Mount

Surface Mount

Max Collector Current

40A

Turn On Time

2900 ns

JESD-30 Code

R-PSSO-G2

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

200W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

375V

Base Part Number

STGB20

Time@Peak Reflow Temperature-Max (s)

30

Vce(on) (Max) @ Vge, Ic

2V @ 4.5V, 20A

Turn Off Time-Nom (toff)

15000 ns

Gate Charge

51nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

2.3μs/2μs

Switching Energy

11.8mJ (off)

Gate-Emitter Thr Voltage-Max

2V

Radiation Hardening

No

Pin Count

3

RoHS Status

ROHS3 Compliant

STMicroelectronics STGB20NB37LZT4

In stock

SKU: STGB20NB37LZT4-9
Manufacturer

STMicroelectronics

Base Part Number

STGB20

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

425V

Number of Elements

1

Test Conditions

250V, 20A, 1k Ω, 4.5V

Turn Off Delay Time

2 μs

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

e3

Part Status

Obsolete

Series

PowerMESH™

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

200W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

245

Current Rating

20A

Time@Peak Reflow Temperature-Max (s)

30

Mounting Type

Surface Mount

Mount

Surface Mount

Max Breakdown Voltage

425V

Turn On Time

2900 ns

Power Dissipation

200W

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

2.3 μs

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

375V

Max Collector Current

40A

Continuous Drain Current (ID)

20A

JESD-30 Code

R-PSSO-G2

Pin Count

3

Vce(on) (Max) @ Vge, Ic

2V @ 4.5V, 20A

Turn Off Time-Nom (toff)

15000 ns

Gate Charge

51nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

2.3μs/2μs

Switching Energy

11.8mJ (off)

Gate-Emitter Thr Voltage-Max

2V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Element Configuration

Single

Lead Free

Lead Free

STMicroelectronics STGB20NC60V

In stock

SKU: STGB20NC60V-9
Manufacturer

STMicroelectronics

Operating Temperature

-55°C~150°C TJ

Base Part Number

STGB20

Max Power Dissipation

200W

ECCN Code

EAR99

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Part Status

Obsolete

Series

PowerMESH™

Element Configuration

Single

Packaging

Tape & Reel (TR)

Turn Off Delay Time

100 ns

Test Conditions

390V, 20A, 3.3 Ω, 15V

Collector-Emitter Breakdown Voltage

600V

Weight

2.240009g

Number of Pins

3

Mounting Type

Surface Mount

Mount

Surface Mount

Turn On Delay Time

31 ns

Td (on/off) @ 25°C

31ns/100ns

RoHS Status

ROHS3 Compliant

Radiation Hardening

No

Width

15mm

Length

8.5mm

Height

4.6mm

Switching Energy

220μJ (on), 330μJ (off)

Current - Collector Pulsed (Icm)

100A

Input Type

Standard

Gate Charge

100nC

Continuous Collector Current

60A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Max Breakdown Voltage

600V

Max Collector Current

60A

Collector Emitter Voltage (VCEO)

600V

Lead Free

Lead Free

STMicroelectronics STGB20NC60VT4

In stock

SKU: STGB20NC60VT4-9
Manufacturer

STMicroelectronics

JESD-609 Code

e3

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 20A, 3.3 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Peak Reflow Temperature (Cel)

245

Mount

Surface Mount

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn) – annealed

Max Power Dissipation

200W

Terminal Form

GULL WING

Series

PowerMESH™

Base Part Number

STGB20

Turn On Time

42.5 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Element Configuration

Single

Input Type

Standard

Power - Max

200W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

60A

Max Breakdown Voltage

600V

Pin Count

4

JESD-30 Code

R-PSSO-G2

Turn Off Time-Nom (toff)

280 ns

Gate Charge

100nC

Current - Collector Pulsed (Icm)

100A

Td (on/off) @ 25°C

31ns/100ns

Switching Energy

220μJ (on), 330μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.75V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

STMicroelectronics STGB20V60DF

In stock

SKU: STGB20V60DF-9
Manufacturer

STMicroelectronics

Part Status

Discontinued

Mounting Type

Surface Mount

Number of Pins

3

Weight

2.240009g

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 20A, 15V

Operating Temperature

-55°C~175°C TJ

Element Configuration

Single

Mount

Surface Mount

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

167W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STGB20

Packaging

Cut Tape (CT)

Input Type

Standard

Gate Charge

116nC

Current - Collector Pulsed (Icm)

80A

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

Reverse Recovery Time

40 ns

Max Breakdown Voltage

600V

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 20A

IGBT Type

Trench Field Stop

Power - Max

167W

Polarity/Channel Type

N-CHANNEL

Td (on/off) @ 25°C

38ns/149ns

Switching Energy

200μJ (on), 130μJ (off)

Gate-Emitter Voltage-Max

20V

Height

4.6mm

Length

10.4mm

Width

9.35mm

RoHS Status

ROHS3 Compliant