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Discrete Semiconductors
STMicroelectronics STGB20H60DF
In stock
Manufacturer |
STMicroelectronics |
---|---|
Part Status |
Active |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 20A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Element Configuration |
Single |
Factory Lead Time |
20 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
167W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STGB20 |
Packaging |
Cut Tape (CT) |
Input Type |
Standard |
Gate Charge |
115nC |
Current - Collector Pulsed (Icm) |
80A |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
40A |
Reverse Recovery Time |
90 ns |
Max Breakdown Voltage |
600V |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 20A |
IGBT Type |
Trench Field Stop |
Power - Max |
167W |
Polarity/Channel Type |
N-CHANNEL |
Td (on/off) @ 25°C |
42.5ns/177ns |
Switching Energy |
209μJ (on), 261μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Height |
4.6mm |
Length |
10.4mm |
Width |
9.35mm |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGB20H65DFB2
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
Surface Mount |
Surface Mount |
D2PAK-3 |
Base Product Number |
STMicroelectronics |
Gate to Emitter Voltage (Max) |
STMicroelectronics |
Maximum Operating Temperature |
STMicroelectronics |
Minimum Operating Temperature |
MSL 1 – Unlimited |
Operating Temperature Classification |
Digi-Reel? |
Package Type |
Active |
Rad Hardened |
Details |
Tradename |
-55°C ~ 175°C (TJ) |
Operating Temperature |
MouseReel |
Packaging |
HB2 |
ECCN Code |
IGBTs |
Configuration |
147 |
Case Connection |
Standard |
Input Type |
147 W |
Polarity/Channel Type |
IGBT Transistors |
JEDEC-95 Code |
650 V |
Voltage - Collector Emitter Breakdown (Max) |
40 A |
Current - Collector (Ic) (Max) |
1.65 |
Channel Type |
400V, 20A, 10Ohm, 15V |
Test Condition |
2.1V @ 15V, 20A |
Collector Current-Max (IC) |
40 |
Continuous Collector Current |
Trench Field Stop |
Collector-Emitter Voltage-Max |
56 nC |
Gate Charge |
60 A |
Current - Collector Pulsed (Icm) |
16ns/78.8ns |
Td (on/off) @ 25°C |
265μJ (on), 214μJ (off) |
Switching Energy |
215 ns |
Reverse Recovery Time (trr) |
IGBT Transistors |
STMicroelectronics STGB20H65FB2
In stock
Manufacturer |
STMicroelectronics |
---|---|
Input Type |
Standard |
Supplier Device Package |
D2PAK (TO-263) |
Base Product Number |
STGB20 |
Brand |
STMicroelectronics |
Mfr |
STMicroelectronics |
Package |
Tape & Reel (TR) |
Product Status |
Active |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Packaging |
Reel |
Series |
HB2 |
Subcategory |
IGBTs |
Power Dissipation |
147 |
Mounting Type |
Surface Mount |
Product Type |
IGBT Transistors |
Power - Max |
147 W |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Current - Collector (Ic) (Max) |
40 A |
Collector Emitter Saturation Voltage |
1.65 |
Test Condition |
400V, 20A, 10Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 20A |
Continuous Collector Current |
40 |
IGBT Type |
Trench Field Stop |
Gate Charge |
56 nC |
Current - Collector Pulsed (Icm) |
60 A |
Td (on/off) @ 25°C |
16ns/78.8ns |
Switching Energy |
265μJ (on), 214μJ (off) |
Product Category |
IGBT Transistors |
STMicroelectronics STGB20M65DF2
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
30 Weeks |
Mounting Type |
Surface Mount |
Current-Collector (Ic) (Max) |
40A |
Test Conditions |
400V, 20A, 12 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Series |
M |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STGB20 |
Input Type |
Standard |
Power - Max |
166W |
Reverse Recovery Time |
166ns |
Voltage - Collector Emitter Breakdown (Max) |
650V |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 20A |
IGBT Type |
Trench Field Stop |
Gate Charge |
63nC |
Current - Collector Pulsed (Icm) |
80A |
Td (on/off) @ 25°C |
26ns/108ns |
Switching Energy |
140μJ (on), 560μJ (off) |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGB20N40LZ
In stock
Manufacturer |
STMicroelectronics |
---|---|
Element Configuration |
Single |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
390V |
Test Conditions |
300V, 10A, 1k Ω, 5V |
Turn Off Delay Time |
4.3 μs |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Cut Tape (CT) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
150W |
Base Part Number |
STGB20 |
Factory Lead Time |
8 Weeks |
Input Type |
Logic |
Power Dissipation |
150W |
Turn On Delay Time |
700 ns |
Collector Emitter Voltage (VCEO) |
425V |
Max Collector Current |
25A |
Max Breakdown Voltage |
390V |
Vce(on) (Max) @ Vge, Ic |
1.6V @ 4V, 6A |
Gate Charge |
24nC |
Current - Collector Pulsed (Icm) |
40A |
Td (on/off) @ 25°C |
700ns/4.3μs |
Height |
4.6mm |
Length |
10.4mm |
Width |
9.35mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STGB20N45LZAG
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
8 Weeks |
Mounting Type |
Surface Mount |
Current-Collector (Ic) (Max) |
25A |
Test Conditions |
300V, 10A, 1k Ω, 5V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Series |
Automotive, AEC-Q101 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Base Part Number |
STGB20 |
Input Type |
Logic |
Power - Max |
150W |
Voltage - Collector Emitter Breakdown (Max) |
450V |
Vce(on) (Max) @ Vge, Ic |
1.25V @ 4V, 6A |
Gate Charge |
26nC |
Current - Collector Pulsed (Icm) |
50A |
Td (on/off) @ 25°C |
1.1μs/4.6μs |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGB20NB32LZ
In stock
Manufacturer |
STMicroelectronics |
---|---|
JESD-609 Code |
e3 |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
375V |
Number of Elements |
1 |
Test Conditions |
250V, 20A, 1k Ω, 4.5V |
Operating Temperature |
175°C TJ |
Packaging |
Tube |
Current Rating |
20A |
Mount |
Surface Mount |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
2V |
Max Power Dissipation |
150W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
245 |
Series |
PowerMESH™ |
Time@Peak Reflow Temperature-Max (s) |
30 |
Collector Emitter Voltage (VCEO) |
2V |
Max Collector Current |
40A |
JESD-30 Code |
R-PSSO-G2 |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
150W |
Transistor Application |
AUTOMOTIVE IGNITION |
Rise Time |
600ns |
Polarity/Channel Type |
N-CHANNEL |
Base Part Number |
STGB20 |
Pin Count |
3 |
Turn On Time |
2900 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 4.5V, 20A |
Turn Off Time-Nom (toff) |
15900 ns |
Gate Charge |
51nC |
Current - Collector Pulsed (Icm) |
80A |
Td (on/off) @ 25°C |
2.3μs/11.5μs |
Switching Energy |
11.8mJ (off) |
Gate-Emitter Thr Voltage-Max |
2V |
Radiation Hardening |
No |
RoHS Status |
Non-RoHS Compliant |
STMicroelectronics STGB20NB37LZ
In stock
Manufacturer |
STMicroelectronics |
---|---|
Peak Reflow Temperature (Cel) |
245 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
425V |
Number of Elements |
1 |
Test Conditions |
250V, 20A, 1k Ω, 4.5V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Series |
PowerMESH™ |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
ESD PROTECTED |
Max Power Dissipation |
200W |
Terminal Form |
GULL WING |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Max Collector Current |
40A |
Turn On Time |
2900 ns |
JESD-30 Code |
R-PSSO-G2 |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
200W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
375V |
Base Part Number |
STGB20 |
Time@Peak Reflow Temperature-Max (s) |
30 |
Vce(on) (Max) @ Vge, Ic |
2V @ 4.5V, 20A |
Turn Off Time-Nom (toff) |
15000 ns |
Gate Charge |
51nC |
Current - Collector Pulsed (Icm) |
80A |
Td (on/off) @ 25°C |
2.3μs/2μs |
Switching Energy |
11.8mJ (off) |
Gate-Emitter Thr Voltage-Max |
2V |
Radiation Hardening |
No |
Pin Count |
3 |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGB20NB37LZT4
In stock
Manufacturer |
STMicroelectronics |
---|---|
Base Part Number |
STGB20 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
425V |
Number of Elements |
1 |
Test Conditions |
250V, 20A, 1k Ω, 4.5V |
Turn Off Delay Time |
2 μs |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Series |
PowerMESH™ |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
200W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
245 |
Current Rating |
20A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Max Breakdown Voltage |
425V |
Turn On Time |
2900 ns |
Power Dissipation |
200W |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Turn On Delay Time |
2.3 μs |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
375V |
Max Collector Current |
40A |
Continuous Drain Current (ID) |
20A |
JESD-30 Code |
R-PSSO-G2 |
Pin Count |
3 |
Vce(on) (Max) @ Vge, Ic |
2V @ 4.5V, 20A |
Turn Off Time-Nom (toff) |
15000 ns |
Gate Charge |
51nC |
Current - Collector Pulsed (Icm) |
80A |
Td (on/off) @ 25°C |
2.3μs/2μs |
Switching Energy |
11.8mJ (off) |
Gate-Emitter Thr Voltage-Max |
2V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Element Configuration |
Single |
Lead Free |
Lead Free |
STMicroelectronics STGB20NC60V
In stock
Manufacturer |
STMicroelectronics |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Base Part Number |
STGB20 |
Max Power Dissipation |
200W |
ECCN Code |
EAR99 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Part Status |
Obsolete |
Series |
PowerMESH™ |
Element Configuration |
Single |
Packaging |
Tape & Reel (TR) |
Turn Off Delay Time |
100 ns |
Test Conditions |
390V, 20A, 3.3 Ω, 15V |
Collector-Emitter Breakdown Voltage |
600V |
Weight |
2.240009g |
Number of Pins |
3 |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Turn On Delay Time |
31 ns |
Td (on/off) @ 25°C |
31ns/100ns |
RoHS Status |
ROHS3 Compliant |
Radiation Hardening |
No |
Width |
15mm |
Length |
8.5mm |
Height |
4.6mm |
Switching Energy |
220μJ (on), 330μJ (off) |
Current - Collector Pulsed (Icm) |
100A |
Input Type |
Standard |
Gate Charge |
100nC |
Continuous Collector Current |
60A |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
Max Breakdown Voltage |
600V |
Max Collector Current |
60A |
Collector Emitter Voltage (VCEO) |
600V |
Lead Free |
Lead Free |
STMicroelectronics STGB20NC60VT4
In stock
Manufacturer |
STMicroelectronics |
---|---|
JESD-609 Code |
e3 |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 20A, 3.3 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Peak Reflow Temperature (Cel) |
245 |
Mount |
Surface Mount |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) – annealed |
Max Power Dissipation |
200W |
Terminal Form |
GULL WING |
Series |
PowerMESH™ |
Base Part Number |
STGB20 |
Turn On Time |
42.5 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
200W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
60A |
Max Breakdown Voltage |
600V |
Pin Count |
4 |
JESD-30 Code |
R-PSSO-G2 |
Turn Off Time-Nom (toff) |
280 ns |
Gate Charge |
100nC |
Current - Collector Pulsed (Icm) |
100A |
Td (on/off) @ 25°C |
31ns/100ns |
Switching Energy |
220μJ (on), 330μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGB20V60DF
In stock
Manufacturer |
STMicroelectronics |
---|---|
Part Status |
Discontinued |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
2.240009g |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 20A, 15V |
Operating Temperature |
-55°C~175°C TJ |
Element Configuration |
Single |
Mount |
Surface Mount |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
167W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STGB20 |
Packaging |
Cut Tape (CT) |
Input Type |
Standard |
Gate Charge |
116nC |
Current - Collector Pulsed (Icm) |
80A |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
40A |
Reverse Recovery Time |
40 ns |
Max Breakdown Voltage |
600V |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 20A |
IGBT Type |
Trench Field Stop |
Power - Max |
167W |
Polarity/Channel Type |
N-CHANNEL |
Td (on/off) @ 25°C |
38ns/149ns |
Switching Energy |
200μJ (on), 130μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Height |
4.6mm |
Length |
10.4mm |
Width |
9.35mm |
RoHS Status |
ROHS3 Compliant |