Showing 12913–12924 of 15245 results
STMicroelectronics STGW15S120DF3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 15A, 22 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
259W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
40 Weeks |
| Input Type |
Standard |
| Base Part Number |
STGW15 |
| Power - Max |
259W |
| Collector Emitter Voltage (VCEO) |
2.05V |
| Max Collector Current |
30A |
| Reverse Recovery Time |
270 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.05V @ 15V, 15A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
53nC |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
23ns/140ns |
| Switching Energy |
540μJ (on), 1.38mJ (off) |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGW19NC60H
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-30 Code |
R-PSFM-T3 |
| Package / Case |
TO-247-3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 12A, 10 Ω, 15V |
| Turn Off Delay Time |
97 ns |
| Packaging |
Tube |
| Series |
PowerMESH™ |
| Operating Temperature |
-55°C~150°C TJ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Max Power Dissipation |
140W |
| Base Part Number |
STGW19 |
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Turn Off Time-Nom (toff) |
272 ns |
| Gate Charge |
53nC |
| Power - Max |
140W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
42A |
| Turn On Time |
32 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 12A |
| Input Type |
Standard |
| Element Configuration |
Single |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
25ns/97ns |
| Switching Energy |
85μJ (on), 189μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.75V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
25 ns |
| Lead Free |
Lead Free |
STMicroelectronics STGW20H60DF
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Element Configuration |
Single |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
600V |
| Test Conditions |
400V, 20A, 10 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
167W |
| Base Part Number |
STGW20 |
| Factory Lead Time |
20 Weeks |
| Input Type |
Standard |
| Power Dissipation |
167W |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
40A |
| Reverse Recovery Time |
90ns |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 20A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
115nC |
| Current - Collector Pulsed (Icm) |
80A |
| Td (on/off) @ 25°C |
42.5ns/177ns |
| Switching Energy |
209μJ (on), 261μJ (off) |
| Height |
20.15mm |
| Length |
15.75mm |
| Width |
5.15mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGW20H65FB
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Test Conditions |
400V, 20A, 10 Ω, 15V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Max Power Dissipation |
168W |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Packaging |
Tube |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~175°C TJ |
| Collector-Emitter Breakdown Voltage |
650V |
| Weight |
38.000013g |
| Number of Pins |
3 |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Factory Lead Time |
20 Weeks |
| Element Configuration |
Single |
| Gate Charge |
120nC |
| RoHS Status |
ROHS3 Compliant |
| Gate-Emitter Thr Voltage-Max |
7V |
| Gate-Emitter Voltage-Max |
20V |
| Switching Energy |
77μJ (on), 170μJ (off) |
| Td (on/off) @ 25°C |
30ns/139ns |
| Current - Collector Pulsed (Icm) |
80A |
| IGBT Type |
Trench Field Stop |
| Base Part Number |
STGW20 |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 20A |
| Max Collector Current |
40A |
| Collector Emitter Voltage (VCEO) |
650V |
| Polarity/Channel Type |
N-CHANNEL |
| Power - Max |
168W |
| Input Type |
Standard |
| Lead Free |
Lead Free |
STMicroelectronics STGW20IH125DF
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Test Conditions |
600V, 15A, 10 Ω, 15V |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.25kV |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
259W |
| Mount |
Through Hole |
| Factory Lead Time |
32 Weeks |
| Max Collector Current |
40A |
| Base Part Number |
STGW20 |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
259W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.25kV |
| Voltage - Collector Emitter Breakdown (Max) |
1250V |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 15A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Turn Off Time-Nom (toff) |
285 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
68nC |
| Current - Collector Pulsed (Icm) |
80A |
| Td (on/off) @ 25°C |
-/106ns |
| Switching Energy |
410μJ (off) |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGW20NC60VD
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
PowerMESH™ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 20A, 3.3 Ω, 15V |
| Turn Off Delay Time |
100 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
ULTRA FAST |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
200W |
| Current Rating |
30A |
| Base Part Number |
STGW20 |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Turn Off Time-Nom (toff) |
280 ns |
| Power Dissipation |
200W |
| Turn On Delay Time |
31 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
11.5ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
60A |
| Reverse Recovery Time |
44ns |
| Turn On Time |
42.5 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
| Continuous Collector Current |
30A |
| Gate Charge |
100nC |
| Current - Collector Pulsed (Icm) |
150A |
| Element Configuration |
Single |
| Td (on/off) @ 25°C |
31ns/100ns |
| Switching Energy |
220μJ (on), 330μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.75V |
| Height |
20.15mm |
| Length |
15.75mm |
| Width |
5.15mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Input Type |
Standard |
| Lead Free |
Lead Free |
STMicroelectronics STGW20V60DF
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Base Part Number |
STGW20 |
| Max Power Dissipation |
167W |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Power Dissipation |
167W |
| Packaging |
Tube |
| Test Conditions |
400V, 20A, 15V |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Pins |
3 |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Factory Lead Time |
20 Weeks |
| Polarity/Channel Type |
N-CHANNEL |
| Td (on/off) @ 25°C |
38ns/149ns |
| Radiation Hardening |
No |
| Width |
5.15mm |
| Length |
15.75mm |
| Height |
20.15mm |
| Gate-Emitter Voltage-Max |
20V |
| Switching Energy |
200μJ (on), 130μJ (off) |
| Current - Collector Pulsed (Icm) |
80A |
| Input Type |
Standard |
| Gate Charge |
116nC |
| IGBT Type |
Trench Field Stop |
| Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 20A |
| Reverse Recovery Time |
40ns |
| Max Collector Current |
40A |
| Collector Emitter Voltage (VCEO) |
600V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGW20V60F
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Base Part Number |
STGW20 |
| Factory Lead Time |
20 Weeks |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Max Power Dissipation |
167W |
| Test Conditions |
400V, 20A, 15V |
| Pin Count |
3 |
| Turn Off Time-Nom (toff) |
173 ns |
| IGBT Type |
Trench Field Stop |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
40A |
| Turn On Time |
49 ns |
| Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 20A |
| Element Configuration |
Single |
| Power Dissipation |
167W |
| Gate Charge |
116nC |
| Current - Collector Pulsed (Icm) |
80A |
| Td (on/off) @ 25°C |
38ns/149ns |
| Switching Energy |
200μJ (on), 130μJ (off) |
| Height |
20.15mm |
| Length |
15.75mm |
| Width |
5.15mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGW25H120DF2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
32 Weeks |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
38.000013g |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 25A, 10 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
375W |
| Base Part Number |
STGW25 |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
375W |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
50A |
| Reverse Recovery Time |
303 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 25A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
100nC |
| Current - Collector Pulsed (Icm) |
100A |
| Td (on/off) @ 25°C |
29ns/130ns |
| Switching Energy |
600μJ (on), 700μJ (off) |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGW25H120F2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Base Part Number |
STGW25 |
| Factory Lead Time |
32 Weeks |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
375W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Test Conditions |
600V, 25A, 10 Ω, 15V |
| JESD-30 Code |
R-PSFM-T3 |
| Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 25A |
| Turn Off Time-Nom (toff) |
339 ns |
| Power - Max |
375W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.6V |
| Max Collector Current |
50A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
41 ns |
| Element Configuration |
Single |
| Input Type |
Standard |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
100nC |
| Current - Collector Pulsed (Icm) |
100A |
| Td (on/off) @ 25°C |
29ns/130ns |
| Switching Energy |
600μJ (on), 700μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
7V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STGW25S120DF3
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 25A, 15 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
375W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
40 Weeks |
| Input Type |
Standard |
| Base Part Number |
STGW25 |
| Power - Max |
375W |
| Collector Emitter Voltage (VCEO) |
2.1V |
| Max Collector Current |
50A |
| Reverse Recovery Time |
265 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 25A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
80nC |
| Current - Collector Pulsed (Icm) |
100A |
| Td (on/off) @ 25°C |
31ns/147ns |
| Switching Energy |
830μJ (on), 2.37mJ (off) |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGW30H60DF
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Collector-Emitter Breakdown Voltage |
600V |
| Test Conditions |
400V, 30A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
260W |
| Base Part Number |
STGW30 |
| Element Configuration |
Single |
| Power Dissipation |
260W |
| Input Type |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
60A |
| Reverse Recovery Time |
110 ns |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 30A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
105nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
50ns/160ns |
| Switching Energy |
350μJ (on), 400μJ (off) |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |