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Discrete Semiconductors
Fairchild FQA13N50C
In stock
Manufacturer |
Fairchild |
---|---|
Operating Temperature |
-55°C ~ 150°C (TJ) |
Package / Case |
TO-3P-3, SC-65-3 |
Supplier Device Package |
TO-3P |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Fairchild Semiconductor |
Package |
Tube |
Power Dissipation (Max) |
218W (Tc) |
Product Status |
Obsolete |
Mounting Type |
Through Hole |
Technology |
MOSFET (Metal Oxide) |
Series |
QFET® |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
480mOhm @ 6.75A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
2055 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
13.5A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
56 nC @ 10 V |
Drain to Source Voltage (Vdss) |
500 V |
Vgs (Max) |
±30V |
Fairchild FQA17N40
In stock
Manufacturer |
Fairchild |
---|---|
Operating Temperature |
-55°C ~ 150°C (TJ) |
Package / Case |
TO-3P-3, SC-65-3 |
Supplier Device Package |
TO-3P |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Fairchild Semiconductor |
Package |
Tube |
Power Dissipation (Max) |
190W (Tc) |
Product Status |
Obsolete |
Mounting Type |
Through Hole |
Technology |
MOSFET (Metal Oxide) |
Series |
QFET® |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
270mOhm @ 8.6A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
2300 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
17.2A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
60 nC @ 10 V |
Drain to Source Voltage (Vdss) |
400 V |
Vgs (Max) |
±30V |
Fairchild FQA70N15
In stock
Manufacturer |
Fairchild |
---|---|
Operating Temperature |
-55°C ~ 175°C (TJ) |
Package / Case |
TO-3P-3, SC-65-3 |
Supplier Device Package |
TO-3PN |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Power Dissipation (Max) |
330W (Tc) |
Product Status |
Active |
Mounting Type |
Through Hole |
Technology |
MOSFET (Metal Oxide) |
Series |
QFET® |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
28mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
5400 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
70A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
175 nC @ 10 V |
Drain to Source Voltage (Vdss) |
150 V |
Vgs (Max) |
±25V |
Fairchild FQA9N50
In stock
Manufacturer |
Fairchild |
---|---|
Operating Temperature |
-55°C ~ 150°C (TJ) |
Package / Case |
TO-3P-3, SC-65-3 |
Supplier Device Package |
TO-3P |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Fairchild Semiconductor |
Package |
Tube |
Power Dissipation (Max) |
160W (Tc) |
Product Status |
Obsolete |
Mounting Type |
Through Hole |
Technology |
MOSFET (Metal Oxide) |
Series |
QFET® |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
730mOhm @ 4.8A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
1450 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
9.6A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
36 nC @ 10 V |
Drain to Source Voltage (Vdss) |
500 V |
Vgs (Max) |
±30V |
Fairchild FQAF14N30
In stock
Manufacturer |
Fairchild |
---|---|
Operating Temperature |
-55°C ~ 150°C (TJ) |
Package / Case |
TO-3P-3 Full Pack |
Supplier Device Package |
TO-3PF |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Fairchild Semiconductor |
Package |
Tube |
Power Dissipation (Max) |
90W (Tc) |
Product Status |
Obsolete |
Mounting Type |
Through Hole |
Technology |
MOSFET (Metal Oxide) |
Series |
QFET® |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
290mOhm @ 5.7A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
1360 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
11.4A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
40 nC @ 10 V |
Drain to Source Voltage (Vdss) |
300 V |
Vgs (Max) |
±30V |
Fairchild FQAF16N25C
In stock
Manufacturer |
Fairchild |
---|---|
Operating Temperature |
-55°C ~ 150°C (TJ) |
Package / Case |
TO-3P-3 Full Pack |
Supplier Device Package |
TO-3PF |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Fairchild Semiconductor |
Package |
Tube |
Power Dissipation (Max) |
73W (Tc) |
Product Status |
Obsolete |
Mounting Type |
Through Hole |
Technology |
MOSFET (Metal Oxide) |
Series |
QFET® |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
270mOhm @ 5.7A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
1080 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
11.4A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
53.5 nC @ 10 V |
Drain to Source Voltage (Vdss) |
250 V |
Vgs (Max) |
±30V |
Fairchild FQB10N20LTM
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Surface Mount |
Supplier Device Package |
D2PAK (TO-263) |
Drive Voltage (Max Rds On, Min Rds On) |
5V, 10V |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Power Dissipation (Max) |
3.13W (Ta), 87W (Tc) |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Series |
QFET® |
Technology |
MOSFET (Metal Oxide) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
360mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
830 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
10A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
17 nC @ 5 V |
Drain to Source Voltage (Vdss) |
200 V |
Vgs (Max) |
±20V |
Fairchild FQB17P10TM
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Surface Mount |
Supplier Device Package |
D2PAK (TO-263) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Power Dissipation (Max) |
3.75W (Ta), 100W (Tc) |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Series |
QFET® |
Technology |
MOSFET (Metal Oxide) |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
190mOhm @ 8.25A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
1100 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
16.5A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
39 nC @ 10 V |
Drain to Source Voltage (Vdss) |
100 V |
Vgs (Max) |
±30V |
Fairchild FQB25N33TM
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Surface Mount |
Supplier Device Package |
D2PAK (TO-263) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Power Dissipation (Max) |
3.1W (Ta), 250W (Tc) |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Series |
QFET® |
Technology |
MOSFET (Metal Oxide) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
230mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
2010 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
25A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
75 nC @ 15 V |
Drain to Source Voltage (Vdss) |
330 V |
Vgs (Max) |
±30V |
Fairchild FQB27N25TM-F085
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Surface Mount |
Supplier Device Package |
D²PAK (TO-263) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Power Dissipation (Max) |
417W (Tc) |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Series |
Automotive, AEC-Q101 |
Technology |
MOSFET (Metal Oxide) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
131mOhm @ 25.5A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
1800 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
25.5A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
49 nC @ 10 V |
Drain to Source Voltage (Vdss) |
250 V |
Vgs (Max) |
±30V |
Fairchild FQB45N15V2TM
In stock
Manufacturer |
Fairchild |
---|---|
Series |
QFET® |
Supplier Device Package |
D2PAK (TO-263) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs |
40mOhm @ 22.5A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
3030 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
45A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
94 nC @ 10 V |
Drain to Source Voltage (Vdss) |
150 V |
Vgs (Max) |
±30V |
Fairchild FQB4N80TM
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Surface Mount |
Supplier Device Package |
D2PAK (TO-263) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Power Dissipation (Max) |
3.13W (Ta), 130W (Tc) |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Series |
QFET® |
Technology |
MOSFET (Metal Oxide) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
3.6Ohm @ 1.95A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
880 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
3.9A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
25 nC @ 10 V |
Drain to Source Voltage (Vdss) |
800 V |
Vgs (Max) |
±30V |