Showing 13033–13044 of 15245 results
STMicroelectronics STGY40NC60VD
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 40A, 3.3 Ω, 15V |
| Turn Off Delay Time |
170 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
PowerMESH™ |
| JESD-609 Code |
e3 |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
260W |
| Current Rating |
50A |
| Base Part Number |
STGY40 |
| Pin Count |
3 |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Turn Off Time-Nom (toff) |
247 ns |
| Gate Charge |
214nC |
| Transistor Application |
POWER CONTROL |
| Rise Time |
19ns |
| Drain to Source Voltage (Vdss) |
600V |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
80A |
| Reverse Recovery Time |
44ns |
| Continuous Drain Current (ID) |
50A |
| Turn On Time |
61 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 40A |
| Input Type |
Standard |
| Power Dissipation |
260W |
| Td (on/off) @ 25°C |
43ns/140ns |
| Switching Energy |
330μJ (on), 720μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.75V |
| Height |
20.3mm |
| Length |
15.9mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
43 ns |
| Lead Free |
Lead Free |
STMicroelectronics STGY80H65DFB
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
40 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
400V, 80A, 10 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
469W |
| Reach Compliance Code |
unknown |
| Base Part Number |
STGY80 |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
469W |
| Collector Emitter Voltage (VCEO) |
2V |
| Max Collector Current |
120A |
| Reverse Recovery Time |
85 ns |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 80A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
414nC |
| Current - Collector Pulsed (Icm) |
240A |
| Td (on/off) @ 25°C |
84ns/280ns |
| Switching Energy |
2.1mJ (on), 1.5mJ (off) |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STGYA120M65DF2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
30 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 Exposed Pad |
| Current-Collector (Ic) (Max) |
160A |
| Test Conditions |
400V, 120A, 4.7 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Series |
M |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
STGYA120 |
| Input Type |
Standard |
| Power - Max |
625W |
| Reverse Recovery Time |
202ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
1.95V @ 15V, 120A |
| IGBT Type |
NPT, Trench Field Stop |
| Gate Charge |
420nC |
| Current - Collector Pulsed (Icm) |
360A |
| Td (on/off) @ 25°C |
66ns/185ns |
| Switching Energy |
1.8mJ (on), 4.41mJ (off) |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGYA50H120DF2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 |
| Base Product Number |
STGYA50 |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Current-Collector (Ic) (Max) |
100 A |
| Maximum Collector Emitter Voltage |
1200 V |
| Maximum Gate Emitter Voltage |
±20V |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
STMicroelectronics |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
Max247 long leads |
| Pd - Power Dissipation |
535 W |
| Product Status |
Active |
| Test Conditions |
600V, 50A, 10Ohm, 15V |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Technology |
Si |
| Configuration |
Series |
| Power Dissipation |
535W |
| Input Type |
Standard |
| Power - Max |
535 W |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 50A |
| Continuous Collector Current |
100A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
210 nC |
| Current - Collector Pulsed (Icm) |
200 A |
| Td (on/off) @ 25°C |
40ns/284ns |
| Switching Energy |
2mJ (on), 2.1mJ (off) |
| Reverse Recovery Time (trr) |
340 ns |
STMicroelectronics STGYA75H120DF2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Maximum Gate Emitter Voltage |
±20V |
| Supplier Device Package |
TO-247 |
| Base Product Number |
STGYA75 |
| Brand |
STMicroelectronics |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Continuous Collector Current Ic Max |
75 A |
| Current-Collector (Ic) (Max) |
150 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Test Conditions |
600V, 75A, 10Ohm, 15V |
| Maximum Collector Emitter Voltage |
1200 V |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
STMicroelectronics |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
Max247 |
| Pd - Power Dissipation |
750 W |
| Product Status |
Active |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Product Type |
IGBT Transistors |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Subcategory |
IGBTs |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
750 |
| Input Type |
Standard |
| Power - Max |
750 W |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 75A |
| Unit Weight |
0.156264 oz |
| Continuous Collector Current |
150 |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
313 nC |
| Current - Collector Pulsed (Icm) |
300 A |
| Td (on/off) @ 25°C |
61ns/366ns |
| Switching Energy |
4.3mJ (on), 3.9mJ (off) |
| Reverse Recovery Time (trr) |
356 ns |
| Packaging |
Tube |
| Product Category |
IGBT Transistors |
STMicroelectronics STH110N10F7-2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Turn Off Delay Time |
52 ns |
| Base Part Number |
STH110 |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Series |
DeepGATE™, STripFET™ VII |
| Packaging |
Cut Tape (CT) |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~175°C TJ |
| Power Dissipation (Max) |
150W Tc |
| Number of Elements |
1 |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Current - Continuous Drain (Id) @ 25℃ |
110A Tc |
| Number of Pins |
3 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Turn On Delay Time |
25 ns |
| Gate to Source Voltage (Vgs) |
20V |
| RoHS Status |
ROHS3 Compliant |
| Radiation Hardening |
No |
| Width |
10.4mm |
| Length |
15.8mm |
| Height |
4.8mm |
| Drain to Source Breakdown Voltage |
100V |
| Continuous Drain Current (ID) |
110A |
| Power Dissipation |
150W |
| Vgs (Max) |
±20V |
| Gate Charge (Qg) (Max) @ Vgs |
72nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
5117pF @ 50V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Rds On (Max) @ Id, Vgs |
6.5m Ω @ 55A, 10V |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
STMicroelectronics STH130N10F3-2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
250W Tc |
| Turn Off Delay Time |
52 ns |
| Terminal Form |
GULL WING |
| Factory Lead Time |
12 Weeks |
| Series |
STripFET™ III |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
ULTRA LOW RESISTANCE |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
245 |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3305pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
250W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9.3m Ω @ 60A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STH130 |
| Gate Charge (Qg) (Max) @ Vgs |
57nC @ 10V |
| Rise Time |
38ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7.2 ns |
| Continuous Drain Current (ID) |
120A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
450A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STH15NB50FI
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
PowerMESH™ |
| Package / Case |
ISOWATT-218-3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
80W Tc |
| Operating Temperature |
150°C TJ |
| Base Part Number |
STH15N |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds |
3400pF @ 25V |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
360m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
80nC @ 10V |
| Drain to Source Voltage (Vdss) |
500V |
| Pin Count |
3 |
| Vgs (Max) |
±30V |
| Continuous Drain Current (ID) |
10.5A |
| Drain-source On Resistance-Max |
0.36Ohm |
| Pulsed Drain Current-Max (IDM) |
58.4A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
850 mJ |
| RoHS Status |
Non-RoHS Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Contains Lead |
STMicroelectronics STH160N4LF6-2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
120A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Power Dissipation (Max) |
150W Tc |
| Turn Off Delay Time |
205 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Cut Tape (CT) |
| Series |
DeepGATE™, STripFET™ VI |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STH160 |
| Element Configuration |
Single |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.2m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA (Min) |
| Input Capacitance (Ciss) (Max) @ Vds |
8130pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
181nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
120A |
| Length |
15.8mm |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STH180N10F3-6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
315W Tc |
| Turn Off Delay Time |
99.9 ns |
| Power Dissipation |
315W |
| Mount |
Surface Mount |
| Series |
STripFET™ III |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
4.5MOhm |
| Base Part Number |
STH180 |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~175°C TJ |
| Turn On Delay Time |
25.6 ns |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6665pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
114.6nC @ 10V |
| Rise Time |
97.1ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6.9 ns |
| Continuous Drain Current (ID) |
180A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.5m Ω @ 60A, 10V |
| Drain to Source Breakdown Voltage |
100V |
| Height |
4.8mm |
| Length |
15.25mm |
| Width |
10.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STH185N10F3-6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
315W Tc |
| Turn Off Delay Time |
99.9 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Cut Tape (CT) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Factory Lead Time |
12 Weeks |
| Base Part Number |
STH185 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
Single |
| Turn On Delay Time |
25.6 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.5m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6665pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
114.6nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
180A |
| Length |
15.25mm |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STH240N10F7-6
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Cut Tape (CT) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
13 Weeks |
| Series |
STripFET™ F7 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA LOW RESISTANCE |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
11550pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
160nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.5m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 250μA |
| Base Part Number |
STH240 |
| JESD-30 Code |
R-PSSO-G6 |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
180A |
| Drain-source On Resistance-Max |
0.0025Ohm |
| Pulsed Drain Current-Max (IDM) |
720A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
500 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |